Awards

Premio dei Premi per l’Innovazione 2012

Premio dei Premi 2012, Gaudenzio Meneghesso, Francesco Profumo, Renato Schifani, Gabriello Mancini

Tuesday, June 12 2012,  ETA Semiconductors has been awarded with the “Award of the Awards for the Innovation”, in the sector of University and Pubblic Research.

The prestigious award has been given by the Minister of the  University and Research, Francesco Profumo.

http://presidente.senato.it/agenda/63836/63837/pagina.htm

http://www.cotec.it/it/2012/06/premio-dei-premi-4/

AWARDS:

He got the SIP Award (SIP was the Italian national telephone company) given for the thesis work that was considered among the 6 best thesis discussed at the University of Padova in the Academic Year 1991-92

2011 winner of  “StartCup Veneto 2011” with the proposal  “Eta Semiconductor” (10KEuro).

2011 winner of the “Premio Nazionale Innovazione –  Working Capital ­ PNI” in the green area, with “Eta Semiconductor”(100KEuro)

BEST PAPER AWARDS

He got the Best Student Paper Award at the international conference European Symposium Reliability on Electron Devices, Failure Physics and Analysis,   ESREF’96 (Enschede Olanda, 8-11 Ottobre 1996) with the paper entitled: “Turn-On Speed Of Grounded Gate nMOS ESD protection Transistors” with the following co-authors: G. Meneghesso, J.R.M. Luchies, F. Kuper, A.J. Mouthaan.

He got the Best Paper Award at the international conference European Symposium Reliability on Electron Devices, Failure Physics and Analysis,  ESREF’99 (Bordeaux, France, 5-8 Ottobre 1999) with the paper entitled: “HBM and TLP ESD robustness in smart-power protection structures”, with the following co-authors: S. Santirosi, G. Meneghesso, E. Novarini, C. Contiero, E. Zanoni.

Coauthor of the  “Best Work” presented at the Annual Meeting iof the Electronics Engineer Professors, ISCHIA 2006,  with the paper entitled : “Reliability issues of RF-MEMS switches”, with the following co-authors: Tazzoli, Vanni Peretti, Enrico Zanoni, Gaudenzio Meneghesso, Roberto Gaddi, Antonio Gnudi.

He got the Best Student Paper Award at the international conference  Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2006, Tucson, Arizona, September 10-15, 2006,  with the paper entitled: “TLP Issues on Ohmic and Capacitive RF-MEMS Switches”, with the following co-authors: A. Tazzoli, V. Peretti, E. Zanoni, G. Meneghesso,

He got the Best Paper Award at the international conference European Symposium Reliability on Electron Devices, Failure Physics and Analysis, ESREF’2007 (Arcachon, France, Ottobre 7-12, 2007) with the paper entitled: “Holding voltage investigation of advanced SCR-based protection structures for CMOS technology”, with the following co-authors: A. Tazzoli, F.A. Marino, M. Cordoni, A. Benvenuti, P. Colombo, E. Zanoni and G. Meneghesso.

He got the Best Paper Award at the international conference European Symposium Reliability on Electron Devices, Failure Physics and Analysis, ESREF’2009 (Arcachon, France, Ottobre 6-9, 2009) with the paper entitled: “Reliability analysis of InGaN Blu-Ray Laser Diode”, with the following co-authors: N. Trivellin, M. Meneghini, G. Meneghesso, E. Zanoni, K. Orita, M. Yuri, T. Tanaka and D. Ueda

He got the Best Paper Award at the international conference European Symposium Reliability on Electron Devices, Failure Physics and Analysis ESREF‘2012 with the paper entitled: Single- and double-heterostructure GaN-HEMTs devices for power switching applications, with the following co-authors: A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo, J. Wuerfl, G. Meneghesso.

He got the Best Paper Award at the international conference International Workshop on Nitride Semiconductors – IWN2012 , Sapporo, Japan, October 14-19, 2012, with the paper entitled: Evidence for breakdown luminescence in AlGaN/GaN HEMTs, with the following co-authors: M. Meneghini, A. Zanandrea, F. Rampazzo, A. Stocco, M. Bertin, D. Pogany, E. Zanoni, G.Meneghesso

He got the Best Poster Award at the international conference IEEE International  Reliability Physics Symposium (IEEE IRPS),  Waikoloa, HI 1-5 June 2014, with the paper entitled: “High-voltage double-pulsed measurement”, with the following co-authors: Bisi, D. ; Stocco, A. ; Meneghini, M. ; Rampazzo, F. ; Cester, A. ; Meneghesso, G. ; Zanoni, E.

He got the Best Student Paper Award at the international conference European Solid-State Device Research Conference (ESSDERC), 16-20 Sept. 2013, Bucharest with the paper entitled “Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors”, with the following co-authors: Bisi, D. ; Meneghini, M. ; Stocco, A. ; Cibin, G. ; Pantellini, A. ; Nanni, A. ; Lanzieri, C. ; Zanoni, E. ; Meneghesso, G.,


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