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Presentazioni ad invito

Gaudenzio Meneghesso e’ stato personalmente invitato a 61 Conferenze di rilevanza  Internazionale  ed e’ inoltre coautore altri 59 interventi and Invito a conferenze internazionali.

Personalmente Invitato a 61 Conferenze di rilevanza internazionale:

  1. G. Meneghesso, J.R.M. Luchies, F.G. Kuper, and A.J. Mouthaan, “Measurements of the turn-on time in grounded-gate nMOS transistors under fast rise time stress pulses”,  INVITED Paper, Proc. of 7th Annual RCJ Reliability Symposium, pp. 27-32 Kamata, Tokyo, 5-7 November 97.
  2. E. Zanoni, G. Meneghesso and R. Menozzi, “Electroluminescence and other Diagnostic Techniques for the Study of Hot Electron Effects in Compound Semiconductor Devices”, (INVITED PAPER) Proc. of DRIP-VIII, The 8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, p.XII-5, Narita, Japan, September 15-18, 1999.
  3. G. Meneghesso, E. Zanoni, “Breakdown mechanisms and hot carrier induced degradation in GaAs and InP-based HEMTs”, (INVITED PAPER) Proc. of HETECH99, 9th European Heterostructure Technology Workshop, Lille, France, September 27-28, 1999.
  4. G. Meneghesso, S. Santirosi, E. Novarini, C. Contiero, E. Zanoni,  “ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests”, INVITED PAPER at IEEE-IRPS 2000, International Reliability Physics Symposium, pp. 270-275, San Jose’, California, April 10-13, 2000
  5. G. Meneghesso, M. Ciappa, P. Malberti, C. Contiero, E. Zanoni “Overstress and Electrostatic Discharge in CMOS and BCD Integrated Circuits”, INVITED PAPER at ESREF 2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 October 2000.
  6. G. Meneghesso and  E. Zanoni, “Traps related effects in SiC and GaN Based devices”, INVITED PAPER AT EuMW 2001, 31th European Microwave Week, Short Course on: “Wide Bandgap semiconductors” organized by Prof. G. Ghione, London, England September 24-28, 2001.
  7. G. Meneghesso and  E. Zanoni, “Reliability of GaN-Based Devices”,, INVITED PAPER AT EuMW 2002, 32th European Microwave Week, Short Course on: “Wide Bandgap semiconductors” organized by Dr. S. Delage, Milano – Italy , September 23-27, 2002.
  8. G. Meneghesso G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni, “Reliability aspects of GaN microwave devices”, INVITED PAPER at EuMW 2003, 33th European Microwave Week, Short Course on: “Workshop on Reliability of Compound Semiconductor Devices” organized by Dr. M. Borgarino, Monaco – Germany , October 6-10, 2003.
  9. G. Meneghesso, “Instabilities and degradation in GaN-based devices”, INVITED PAPER AT HETECH2003, 12th European Heterostructure Technology Workshop, La Casona del Pinar, San Rafael, Segovia, SPAIN, October 12 – 15, 2003.
  10. G. Meneghesso, S. Levada, M. Meneghini, E. Zanoni “Reliability of GaN-based LEDs”, INVITED PAPER at WOCSDICE 2004, 28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, p.29-32, Bratislava, May 17-19, 2004
  11. G. Meneghesso, E. Zanoni, “Reliability aspects of InP based HEMTs”,  INVITED LECTURE at 16th International Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, May 31 – June 4, 2004
  12. G. Meneghesso G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni, “Reliability aspects of GaN microwave devices”  INVITED PAPER at  EuMW 2004, 34th European Microwave Week, Short Course on: “Wide Bandgap Research for Microwave applications: Materials, Devices and Circuit Issues” organized by Dr. S. Delage, Amsterdam, October 11-15, 2004
  13. G. Meneghesso, A. Andreini, “Effective ESD protection for Mixed Power BCD processes on Bulk and SOI substrates” INVITED TUTORIAL at ESREF 2006, 17th European Symposium Reliability of Electron Devices, Failure Physics and Analysis, Wuppertal – Germany 3rd – 6th October 2006
  14. G. Meneghesso, C. Dua, M. Peroni, M. Uren and E. Zanoni, “Parasitic effects and reliability issues on GaN based HEMTs”, INVITED PAPER at 2007 International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center, Ibaraki, Japan, 2007, pp. 160-161.
  15. G. Meneghesso, “Hot electrons and High electric Fields in GaN-HEMTs and their impact on device reliability”, INVITED PAPER at 44th WOCSEMMAD ’08,  The Workshop on Compound Semiconductor Materials and Devices, Palm Springs, CA February 17-20, 2008
  16. G. Meneghesso, A. Tazzoli, F. A. Marino, M. Cordoni, P. Colombo, “Development of a new high holding voltage SCR-based ESD protection structure”, INVITED PAPER at  IEEE International Reliability Physics Symposium, IRPS 2008, Phoenix, AZ, April 27- May 1, 2008.
  17. G. Meneghesso, A. Tazzoli, “Reliability of RF-MEMS for High Frequency Applications”, INVITED TUTORIAL at IRPS 2009.
  18. G. Meneghesso, M. Meneghini, A. Tazzoli, E. Zanoni, “Reliability Issues of GaN-based High Electron Mobility Transistors”, INVITED TUTORIAL at IRPS 2009.
  19. F. Zanon, F. Danesin, A. Tazzoli, M. Meneghini, N. Ronchi, A. Chini, P. Bove, E. Zanoni, and G. Meneghesso1 “ Reliability aspects of GaN-HEMTs on composite substrates”,  INVITED PAPER at 7th  International Conference on Advanced Semiconductor Devices and Microsystems ASDAM ’08, Smolenice, Slovakia, October 12–16, 2008
  20. G. Meneghesso, and A. Tazzoli, “New Issues on Characterisation and Reliability of MEMS Switches”, INVITED PAPER at “Workshop on RF MEMS and MEMS based Sensors for Security, Defence and Aerospace” Rome, April 3 rd 2008.
  21. G. Meneghesso, M. Meneghini, A. Tazzoli, E. Zanoni “Reliability Issues in GaN HEMTs related to traps and gate leakage current” INVITED at  “Nanotechnology for Electronics, opto-Electronics and Electro-mechanical systems”, NanoE3 2008, Margaret River, Western Australia 22-24 September, 2008
  22. G. Meneghesso, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, E. Zanoni, “Light emission in GaN HEMTs: a powerful characterization and reliability tool”, INVITED International Workshop on Nitride semiconductors (IWN2008), Montreux CH, Oct. 6-10, 2008.
  23. G. Meneghesso, “AlGaN/GaN HEMTs  degradation induced by reverse bias testing”,  INVITED PAPER at 45th WOCSEMMAD 09, The Workshop on Compound Semiconductor Materials and Devices, Fr. Myers, FL February 15-18, 2009
  24. G. Meneghesso, A. Tazzoli,  M. Meneghini, E. Zanoni, “Parasitic Effects in GaN HEMTs and  Related Characterization Methods” Invited  Workshop “Advances in Gallium Nitride High Electron Mobility Transistors: Technology and Reliability”, by U. Mishra (UCSB) and E. Zanoni (Univ. of Padova); within the EuMW 2009, Roma 28 September, 2 October, 2009
  25. G. Meneghesso, “New reliability understanding on GaN-HEMTs”,  INVITED PAPER at 46th WOCSEMMAD 10, The Workshop on Compound Semiconductor Materials and Devices,
  26. G. Meneghesso, D. Theron, “46th Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2010) Conference Report” INVITED WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits, May 17-19, 2010 Darmstadt/Seeheim, Germany.,
  27. G. Meneghesso, “Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach”. INVITED 2010 International RCIQE/CREST Joint Workshop, Hokkaido University, Sapporo, Japan, March 1-2, 2010
  28. N. Trivellin, M. Meneghini, E. Zanoni, K. Orita, M. Yuri, T. Tanaka, D. Ueda, G. Meneghesso “A Review on the Reliability of GaN-based Laser Diodes” INVITED, IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California
  29. G. Meneghesso, M. Damman, “Parasitic and Reliability Issues of GaN-Based High Electron Mobility Transistors” INVITED TUTORIAL IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California
  30. G. Meneghesso,  A. Stocco, N. Ronchi, M. Meneghini, and E. Zanoni, “Latest reliability results in GaN HEMTs devices”, INVITED The Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD2011, February 20-23, 2011, Savannah, Georgia
  31. G. Meneghesso, P. Specht, S.L. Delage,  “Conference Report: 47th Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2011)”, INVITED – 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, pp. 111-112, 29 Maggio – 1 Giugno,  Catania – Italy, 2011.
  32. G. Meneghesso, M. Meneghini, E. Zanoni, “Reliability issues in GaN-Based optoelectronic devices: from material to package”,  INVITED Workshop: Reliability and Variability of Emerging Devices for Future Technologies and ULSI Circuits and Systems, International Conference on Materials for Advanced Technologies, ICMAT2011, Singapore,  June 27 – July 1, 2011.
  33. G. Meneghesso, E, Zanoni, M. Meneghini,  “Reliability of GaN-based HEMTs: electrical, optical and physical investigations” INVITED, 9th Topical Workshop on Heterostructure Microelectronics, TWHM2011, Gifu, Japan, August 28 – 31, 2011.
  34. G. Meneghesso, E. Zanoni  “Reliability of Gallium Nitride High Electron Mobility Transistors” Invited TUTORIAL IRPS2012, International Reliability Physics Symposium,  Anaheim, CA, USA, April 15-19, 2012
  35. E. Zanoni, G. Meneghesso, “Reliability of Gallium Nitride High Electron Mobility Transistors: from microwave to power electronics” Invited TUTORIAL, 24th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD’12), Bruges, Belgium, June 4-7, 2012
  36. G. Meneghesso, M. Meneghini, E. Zanoni, “Trapping and High Electric Field Parasitic and Degradation phenomena in AlGaN/GaN power HEMTs” INVITED IWN2012 International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012
  37. G. Meneghesso, M. Meneghini, E. Zanoni, “Breakdown and high field related effects in GaN power HEMTs”, INVITED WOCSEMMAD 2013, New Orleans,  February 17-20, 2012
  38. Meneghesso, G.; Zanandrea, A.; Stocco, A.; Rossetto, I.; De Santi, C.; Rampazzo, F.; Meneghini, M.; Zanoni, E.; Bahat-Treidel, E.; Hilt, O.; Ivo, P.; Wuerfl, J., “GaN-HEMTs devices with single- and double-heterostructure for power switching applications,” INVITED 2013 IEEE International, Reliability Physics Symposium (IRPS),  pp.3C.1.1,3C.1.7, Monterey, CA 14-18 April 2013
  39. G. Meneghesso, D. Pavlidis, P. Specht, “A Review of the Main Results Presented at the 49th Workshop on Compound Semiconductor Materials And Devices”, INVITED PAPER  37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013), p. 93-94, Warnemünde, Germany, May 26th to 29th, 2013
  40. G. Meneghesso, M. Meneghini, E. Zanoni, “GaN Technology Enabling Green Energy: Opportunities and Challenges”, INVITED PAPER  7th Annual International Electrostatic  Discharge Workshop (IEW) Airlie Conference Center, Warrenton, VA, USA.  May 20-23, 2013
  41. G. Meneghesso, M.Meneghini, A.Stocco, D.Bisi, C.de Santi, I.Rossetto, A.Zanandrea, A. Cester, F.Rampazzo, E.Zanoni, “Degradation of AlGaN/GaN HEMT devices: role of reverse-bias and hot electron stress” INVITED PAPER 18th Conference of “Insulating Films on Semiconductors (INFOS2013) 25-28 June 2013 Cracow, Poland
  42. Gaudenzio Meneghesso – “GaN HEMTs Devices: opportunities, challenges and issues”, INVITED PAPER 42nd “Jaszowiec”  International School and Conference on the Physics of Semiconductors, Wisla, Poland, June 22-27, 2013
  43. G. Meneghesso, M. Meneghini, E. Zanoni, “Reliability and Instabilities in GaN-based HEMTs”, INVITED 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC),  Chengdu, China  18 Jun – 20 Jun 2014,
  44. G. Meneghesso, M. Meneghini, and E. Zanoni, “Gallium Nitride Based Hemts For Power Applications: High Field Trapping Issues” INVITED 2014 IEEE12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT2014),  Guilin, China  Oct.28-31, 2014
  45. G. Meneghesso, M. Meneghini, E. Zanoni “Reliability and High Field related issues in GaN-HEMT devices”, INVITED TUTORIAL 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications (WIPDA2014)  Oct. 13-15, 2014, Knoxville, Tennessee,
  46. G. Meneghesso, M. Meneghini, A. Chini, G. Verzellesi,  and E. Zanoni, “Trapping and High Field Related Issues in GaN Power HEMTs”, INVITED, Proc. of IEEE International Electron Device Meeting IEDM 2014, San Francisco, CA December 15-17, 2014 pp. 17.5.1-17.5.4, 2014
  47. G. Meneghesso, M. Meneghini, and E. Zanoni, “Reliability and Parasitic effects in power GaN HEMTs” INVITED , 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma), March 26 till March 31, Nagoya University, Nagoya, Japan2015
  48. G. Meneghesso, M. Meneghini, and E. Zanoni, “GaN­on­Si MIS­HEMTs: Buffer and Insulator­Related Trapping Mechanisms”, INVITED 2015 Compound Semiconductor Week, 42nd International Symposium on Compound Semiconductors (ISCS), June 28-July 2nd, 2015, Santa Barbara, California
  49. G. Meneghesso, D. Bisi, M. Meneghini, E. Zanoni, “Reliability and Parasitic related issues in GaN-based HEMTs”, INVITED TUTORIAL, Compound Semiconductor Week, June 28-July 2, 2015 Santa Barbara, CA USA
  50. G. Meneghesso, M. Meneghini, E. Zanoni, P. Vanmeerbeek, and P. Moens, “Trapping induced parasitic effects in GaN-HEMT for power switching applications,” INVITED in IC Design & Technology (ICICDT), 2015 International Conference on , pp.1-4, 1-3 June 2015 Leuven, Belgium
  51. G. Meneghesso, M. Meneghini, and E. Zanoni, “Reliability and Breakdown Phenomena in Power GaN HEMT on Si Substrate”, INVITED at 8th International Conference on Materials for Advanced Technologies, ICMAT 2015, 28 June-03 July 2015, Suntec Singapore, Symposium Y Reliability and Variability of Devices for Circuits and Systems,
  52. G. Meneghesso, M. Meneghini, E. Zanoni, “Reliability and Parasitic Issues in GaN-Based Power HEMTs”, INVITED, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, August 30th – September 4th, 2015
  53. G. Meneghesso, M. Meneghini, E. Zanoni“Dielectric-Related Bias-Induced Threshold Voltage Instability in GaN based power HEMTs”, INVITED WoDIM 2016, 19th Workshop on Dielectrics in Microelectronics, 27-30 June 2016, Aci Castello (Catania), Italy
  54. G. Meneghesso, D. Bisi, I. Rossetto, C. de Santi, M. Meneghini, E. Zanoni, “Reliability and trapping issues in GaN based MIS HEMTs”, INVITED MRS Fall Meeting, “Wide-Bandgap Materials for Energy Efficiency: Power Electronics and Solid-State Lighting”. Nov. 27 to Dec. 2, 201654)
  55. G. Meneghesso, D. Bisi, I. Rossetto, M. Ruzzarin, M. Meneghini, E. Zanoni, “Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs”, INVITED IEEE International Integrated Reliability Workshop (IEEE IIRW), October 8-12, 2017, Stanford Sierra Conference Center, Fallen Leaf Lake, CA, USA
  56. G. Meneghesso, D. Bisi, I. Rossetto, M. Ruzzarin, C. De Santi,  M. Meneghini, E. Zanoni, “Dielectric related issues in GaN based MIS HEMTs”, INVITED 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI), Santa Fe, New Mexico, January 15-19, 2017.
  57. G. Meneghesso; M. Meneghini ; I. Rossetto ; E. Canato; J. Bartholomeus ; C. De Santi ; N. Trivellin ; E. Zanoni, “GaN HEMTs with p-GaN gate: field- and time-dependent degradation”, INVITED  Gallium Nitride Materials and Devices XII, 1010419 SPIE Photonics West – 30 January – 2 February 2017 in San Francisco, California USA (Proc. SPIE 10104)
  58. G. Meneghesso, M. Meneghini, C. De Santi, A. Barbato, M. Barbato, M. Borga, E. Canato, E. Fabris, F. Masin, M. Ruzzarin, A. Tajalli, E. Zanoni, “Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics”, INVITED 2018 International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, 11-16 November 2018
  59. Meneghesso, G.; Meneghini, M.; De Santi, C.; Zanoni, E. “; “GaN-based lateral and vertical devices physical mechanisms limiting stability and reliability”;”, INVITED 3rd Electron Devices Technology and Manufacturing Conference (EDTM 2019),  Singapore, 12-15 March 2019, DOI: 10.1109/EDTM.2019.8731064
  60. Gaudenzio Meneghesso,  “Innovative reliable Nitride based power devices and applications EU Activity, H2020, InRel-NPower” INVITED , European GaN for Space Applications, 19 November 2019, Brussels, Belgium
  61. Gaudenzio Meneghesso Matteo Meneghini, Carlo De Santi, and Enrico Zanoni, “Degradation and reliability of GaN-based lateral and vertical transistors”, INVITED 13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019), Toyama, Japan August 26-29, 2019

COAUTORE DEI SEGUENTI LAVORI AD INVITO:

  1. E. Zanoni, C. Tedesco, A. Neviani, G. Meneghesso, “Reliability issues due to hot-electron effects  in GaAs-based MESFET’s and HEMT’s”,  INVITED PAPER, H.J.Queisser, J.E. Chung, K.E. Bean, T.J. Shaffner, H. Tsuya (editors), Proceedings of the Symposium on “The degradation of the electronic devices due to device operation as well as cristalline and process-induced defects”, The Electrochemical Society Inc. Pennington  N.J., USA, Proc. Vol. 94-1, pp. 111-124, 1994.
  2. E. Zanoni, A. Neviani, G. Meneghesso, E. De Bortoli, L.Vendrame, and A. Rizzato, “Hot-electron Induced effects, light emission, breakdown and reliability problems phenomena in GaAs MESFET’s AlGaAs/GaAs HEMT’s and AlGaAs/InGaAs pseudomorphic HEMT’s”,  INVITED PAPER, Proc. of ESREF’94, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. pp 261-272, Glasgow Scotland, October 1994.
  3. E. Zanoni, G. Meneghesso, E. De Bortoli, L. Vendrame, “Failure Mechanism of AlGaAs/InGaAs Pseudomorphic HEMT’s”,  INVITED PAPER, Proc. of RELECTRONIC’95, 9th Symposium on Quality and Reliability in Electronics, pp 365-375, Budapest, Hungary, October, 1995
  4. G. Meneghesso, C. Canali, F. Magistrali, D. Sala, M. Vanzi, E. Zanoni, “Failure Mechanisms due to Metallurgical Interaction in Commercially Available AlGaAs/GaAs and AlGaAs/InGaAs HEMT’s”,(INTRODUCTORY INVITED PAPER) Microelectronics and Reliability, Vol. 38, No. 4, pp. 497-506, 1998.
  5. F. Fantini, M. Borgarino, L. Cattani, P. Cova, R. Menozzi, G. Salviati, C. Canali, G. Meneghesso, E. Zanoni, “Reliability Issue in Compound Semiconductor Heterojunction Devices”, INVITED PAPER at 25th International Symposium on Compound Semiconductor, ISCS’98, pp. Fr2B-1, Nara, Japan, October 12-16, 1998.
  6. E. Zanoni, G.Meneghesso, D. Buttari, M. Maretto, G. Massari, “Hot Electrons and Reliability in HEMTs”, INVITED PAPER at WOCSDICE ‘99, 23th European Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.39-42, Chantilly, France, May 26-28, 1999.
  7. G. Verzellesi, G. Meneghesso, A. Chini, E. Zanoni, C. Canali, “DC-to-RF dispersion in GaAs and GaN based Heterostructure FETs: Performance and reliability issues”, INVITED PAPER at t ESREF 2005, 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon (Bordeaux), France, 10-14 October 2005
  8. A. Andreini, L. Cerati and G. Meneghesso, “Review of Approaches and Solutions for Effective ESD Protection Devices and Schemes in Smart Power ICs”, INVITED PAPER at EOS/ESD/EMI WORKSHOP, “Immunity of electronic applications to electrical (EOS/ESD) and electromagnetic (EMI) stresses: From system level to chip level”, pp. 3-10, Toulouse, May 18-19, 2006.
  9. M. Meneghini, L. Trevisanello, G. Meneghesso, and E. Zanoni, “Study of the reliability and degradation mechanisms of GaN LEDs INVITED PAPER at 5th International Workshop on Industrial Technologies for Optoelectronic Semiconductors IWITOS07,: Reliability and Standardization of LED/Solid State Lighting, Seoul, Corea, January 30, 2007, pp. 37-98, 2007
  10. M. Meneghini, L. Trevisanello, G. Meneghesso, E. Zanoni, “High temperature instabilities of GaN LEDs related to passivation”, INVITED PAPER at  Annual Workshop on Compound Semiconductor Materials and Devices – WOCSEMMAD ’07,
  11. E. Zanoni, G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, F. Zanon “A Review of Failure Modes and Mechanisms of GaN-based HEMT’s”, INVITED PAPER at IEDM07, Tech. Digest, IEEE International Electron Device Meeting, pp. 381-384, Washington DC, December 10-12, 2007
  12. M. Meneghini, L. Trevisanello, G. Mura, M. Vanzi, G. Meneghesso and E. Zanoni “Study of the factors that limit the reliability of GaN-based LEDs at high temperature levels”;  INVITED PAPER at 6th International Workshop on Industrial Technologies for Optoelectronic Semiconductors (IWITOS08): Reliability and Standardization of LED/Solid State Lighting, Seoul, Corea, January 29, 2008, 2008
  13. E. Zanoni, G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli and F. Zanon, “Failure mechanisms of GaN-based trasnsistors in on- and off-state”, INVITED PAPER at International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Ibaraki, Japan, 2007, September 23-26, 2008,
  14. F. Zanon, G. Meneghesso, “Breakdown and High electric Fields in GaN-HEMTs on composite substrates”, (INVITED) 45th WOCSEMMAD 09, The Workshop on Compound Semiconductor Materials and Devices, Fr. Myers, FL February 15-18, 2009
  15. E. Zanoni, G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, F. Zanon, “Long-term stability of Gallium Nitride High Electron Mobility Transistors:  a reliability physics approach”, Invited Proceedings of the 4th European Microwave Integrated Circuits Conference, EuMIC 2009, pp. 212-217, Roma 28-29 September, 2009, ISBN 978-2-87487-012-5
  16. M. Meneghini, G. Meneghesso and E. Zanoni, “Reliability of GaN-based optoelectronic devices: state of the art and perspectives”,  INVITED UKNS, Winter Conference, Cork, in the Republic of Ireland, 12-13th January 2010
  17. M. Meneghini, G. Meneghesso, E. Zanoni, “Recent advancements in the reliability of GaN-based LEDs” INVITED, The 4th International Conference on LED and Solid State Lighting, LED 2010 Korea, February 2-5, 2010
  18. C. Claeys, S. Put, A. Griffoni, A. Cester, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, “Impact of radiation on the operation and reliability of deep submicron CMOS”, INVITED China Semiconductor Technology International Conference CSTIC 2010, Symposium I: Design and Device Engineering, March 18-19, 2010, Shanghai, China
  19. M. Meneghini, A. Tazzoli, G. Meneghesso, E. Zanoni, “Reverse-bias and ESD instabilities of InGaN-based LEDs”, INVITED WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits, May 17-19, 2010 Darmstadt/Seeheim, Germany.
  20. M. Meneghini, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, G. Meneghesso, E. Zanoni, “State of the art in the reliability of GaN-based laser diodes” INVITED EMRS 2010 Fall Meeting of European Material Research Society, Warsaw 13th and 17th September 2010.
  21. E. Zanoni, G. Meneghesso, M. Meneghini, “Characterization and reliability of GaN-based LEDs and lasers” INVITED SPIE Photonics West 2011 Conference on Gallium Nitride Materials and Devices San Francisco, January 22-27, 2011
  22. E. Zanoni, M. Meneghini, G. Meneghesso, “Off-state and on-state drain and gate current degradation of AlGaN/GaN High Electron Mobility Transistors on SiC substrate”, Invited,  9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  23. E. Zanoni, G. Meneghesso, M. Meneghini, A. Stocco, F. Rampazzo, R. Silvestri, I. Rossetto, and N. Ronchi, Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors” Invited,  Symposium: E10 – GaN and SiC Power Technologies, 220th ECS Meeting & Electrochemical Energy Summit in Boston, Massachusetts, October 9-14, 2011
  24. E. Zanoni, G. Meneghesso, M. Meneghini, A. Stocco, “GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms”. Invited, 2012 MRS Spring Meeting & Exhibit – SYMPOSIUM: G: Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II,  San Francisco, CA, April 9 – April 13, 2012
  25. E. Zanoni, G. Meneghesso, “Reliability of Gallium Nitride High Electron Mobility Transistors: from microwave to power electronics” INVITED TUTORIAL, 24th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD’12), Bruges, Belgium, June 4-7, 2012.
  26. G. Verzellesi, D. Saguatti, M. Meneghini, G. Meneghesso, E. Zanoni, “Mechanisms of efficiency droop in InGaN light-emitting diodes a critical analysis” INVITED, 6th Taiwan Solid State Lighting (2012 tSSL), Taipei, Taiwan, June 19-20, 2012
  27. M. Meneghini, N. Trivellin, G. Meneghesso, and E. Zanoni  High-Power LEDs for Solid-State Lighting: Reliability Issues and Degradation Modes, INVITED 13th International Symposium on the Science and Technology of Lighting (LS13), Troy, New York, June 24-29, 2012
  28. M. Meneghini, M. Bertin, G. Dal Santo, A. Stocco, D. Bisi, G. Meneghesso, E. Zanoni, D. Marcon, P. E. Malinowski, A. Chini, “Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements” INVITED ISCS 2012, 39th International Symposium on Compound Semiconductors, CSW, Santa Barbara, CA USA, August 27-30, 2012
  29. E. Zanoni, M. Meneghini, G. Meneghesso, “Reliability of AlGaN/GaN High Electron Mobility Transistors:a literature survey” INVITED  Year In Review at IEEE International  Reliability Physics Symposium (IRPS), 2013, Monterey, CA 14-18 April 2013
  30. M. Meneghini, G. Verzellesi, E. Zanoni G. Meneghesso, Failure Physics and Reliability of GaN-Based optoelectronic devices,  INVITED  , Workshop: Reliability and Variability of Devices for Circuits and Systems, 7th International Conference on Materials for Advanced Technologies, ICMAT2013, Singapore,  June 30 – July 5, 2013.
  31. M. Meneghini, G. Meneghesso, and E. Zanoni, “GaN-based HEMTs for power applications: parasitics and reliability”, INVITED TUTORIAL at 2014 IEEE International Reliability Physics Symposium,  IRPS 2014; Waikoloa, HI; United States; 1-5 June 2014
  32. M. Meneghini, G. Meneghesso, and E. Zanoni, “GaN-based devices: technology, physics and reliability”, INVITED Emerging Technology Seminar at EOS/ESD Symposium 2014, Westin La Paloma, Tucson AZ, September 8, 2014, pp. 1-44
  33. E. Zanoni, G. Meneghesso, M. Meneghini,  D. Bisi, A. Chini, C. De Santi, F. Rampazzo, I. Rossetto , A. Stocco, G. Verzellesi, “Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors”, INVITED International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 08-11 Sep 2014
  34. M. Meneghini, G. Meneghesso, E. Zanoni, “InGaN-based LEDs: non-radiative losses and degradation mechanisms”, INVITED Wide-Bandgap Materials for Solid-State Lighting and Power Electronics, 2014 MRS Fall Meeting & Exhibit November, Boston, Massachusetts 30 – December 5, 2014
  35. M. Meneghini, G. Meneghesso, E. Zanoni, “GaN-based HEMTs for power applications: parasitics and reliability” INVITED TUTORIAL  Wide-Bandgap Materials for Solid-State Lighting and Power Electronics, 2014 MRS Fall Meeting & Exhibit November, Boston, Massachusetts 30 – December 5, 2014
  36. E. Zanoni, M. Meneghini, and G. Meneghesso, “Reliability issues in GaN-based HEMTs: from charge trapping to failure mechanisms”, INVITED, Presented at the International Workshop on Nitride Semiconductors  IWN-2014, August 24-29 2014, Wroclaw, Poland;
  37. M. Meneghini, G. Meneghesso, and E. Zanoni, “Degradation of green and violet InGaN laser diodes: microscopic origin and acceleration factors”, INVITED, ”, Presented at the International Workshop on Nitride Semiconductors  IWN-2014, August 24-29 2014, Wroclaw, Poland
  38. E. Zanoni, M. Meneghini, N. Trivellin, M. Dal Lago, G. Meneghesso, “GaN-based LEDs: State of the art and reliability-limiting mechanisms”, INVITED KEYNOTE at 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014, Ghent; Belgium; 7-9 April 2014
  39. G. Verzellesi, A. Bosi, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in group III-nitride LEDs”, INVITED, Proceedings of the 23rd European Workshop on Heterostructure Technology – HETECH 2014, [8-1], 12-15 October 2014, Justus Liebig University Giessen, Rauischholzhausen Castle, Germany
  40. M. Meneghini, C. De Santi, M. La Grassa, N. Trivellin, D. Barbisan, M. Ferretti, G. Meneghesso, and E. Zanoni, “Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability”, INVITED, Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 93830G (March 9, 2015), San Francisco, February 10-12, 2015
  41. M. Meneghini, C. De Santi, G. Meneghesso, and E. Zanoni, “InGaN-Based Laser Diodes: Physical Origin of Gradual and Catastrophic Degradation”, INVITED Presentation at the 2015 MRS Spring Meeting, April 6-10, 2015, San Francisco, California
  42. M. Meneghini, G. Meneghesso, and E. Zanoni, “Performance and degradation of InGaN/GaN LEDs and lasers”, INVITED Tutorial at the 2015 MRS Spring Meeting, April 6-10, 2015, San Francisco, California
  43. M. Meneghini, C. De Santi, M. La Grassa, G. Meneghesso, and E. Zanoni, “Non radiative losses and degradation in InGaN-based LEDs”, INVITED at the 11th Topical Workshop on Heterostructure Microelectronics TWHM 2015, August 23-26, 2015, Takayama, Japan, pp. 5-6
  44. M. Meneghini, E. Zanoni, and G. Meneghesso, “InGaN-based Optoelectronic Devices: Loss Mechanisms and Degradation Processes”, INVITED at IEEE NANO 2015, 15th INTERNATIONAL CONFERENCE on NANOTECHNOLOGY, pp. 637 – 640, 27 – 30 July 2015, Rome (Italy).
  45. E. Zanoni, M. Meneghini, and G. Meneghesso, “Dispersion effects, failure modes and mechanisms of GaN-on-Si HEMTs for power electronics applications”, INVITED TUTORIAL at the 45th European Solid-State Device Research Conference – ESSDERC 2015, Graz, Austria, September 18, 2015, pp. 81-147
  46. M. Meneghini, G. Meneghesso, E. Zanoni, C. De Santi, M. Buffolo, A. Munaretto, D. Barbisan, M. Ferretti, N. Trivellin, M. Dal Lago, “Reliability of High Power LEDs: from gradual to catastrophic failure”, INVITED, Proceedings of the 5th International LED professional Symposium, LpS 2015, September 22-24, 2015, BREGENZ, Austria
  47. M. Meneghini, C. De Santi, M. Buffolo, A. Munaretto, G. Meneghesso, and E. Zanoni, “Towards high reliability GaN LEDs: understanding the physical origin of gradual and catastrophic failure”, INVITED at SSLChina 2015, 12th China International Forum on Solid State Lighting, pp. 63-66, November 2-4, 2015, Shenzhen Exhibition Center, China
  48. E. Zanoni, M. Meneghini, G. Meneghesso, D. Bisi, I. Rossetto, A. Stocco, “Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching  applications”, INVITED at 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, Virginia, November 2-4, 2015
  49. M. Meneghini, G. Meneghesso, I. Rossetto, J. Bartholomeus, F. Rampazzo, C. De Santi, D. Bisi, and E. Zanoni, “ Field-dependent degradation mechanisms in GaN-based HEMTs”, INVITED, (2016) Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2016-September, art. no. 7564252, pp. 77-80
  50. P. Moens, A. Banerjee, A. Constant, P. Coppens, M. Caesar, Z. Li, S. Vandeweghe, F. Declercq, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, M. Tack, M. Meneghini, S. Dalcanale, A. Tajalli, G. Meneghesso, E. Zanoni, M. Uren, I. Chatterjee, S. Karboyan and M. Kuball, “Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective”, INVITED ECS Trans. 2016 volume 72, issue 4, 65-76,
  51. M. Meneghini, G. Meneghesso, E. Zanoni, “Key reliability issues and degradation mechanisms of GaN-based power HEMTs”, INVITED, International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida
  52. C. De Santi, G. Meneghesso, M. Meneghini and E. Zanoni, “Dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications”, INVITED 3th International Seminar on Power Semiconductors, ISPS 2016, 31 August – 2 September 2016, Prague, Czech Republic
  53. Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, Isabella Rossetto and Carlo De Santi, INVITED TUTORIAL “Field- and time-dependent degradation of GaN HEMTs”, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2016, September 19 – September 22 2016, Halle, Germany
  54. M. Meneghini, I. Rossetto, C. De Santi, F. Rampazzo, A. Tajalli, A. Barbato, M. Ruzzarin, M. Borga, E. Canato, E. Zanoni, G. Meneghesso, “Reliability and failure analysis in power GaN-HEMTs: an overview”, INVITED in 2015 IEEE International Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA
  55. G. Verzellesi, A.  Chini, C. De Santi, G. Meneghesso, M. Meneghini, I., Rossetto, E. Zanoni, “Gaining Insight into Performanceand ReliabilityLimiting Phenomena in GaN Based Heterostructure Field Effect Transistors by Means of Combined Experimental/Simulation Analysis”, INVITED 9th International Conference on Materials for Advanced Technologies (ICMAT 2017), 18 – 23 June 2017 in Singapore
  56. G. Verzellesi, A. Chini, C. De Santi, G. Meneghesso, M. Meneghini, I. Rosetto, E. Zanoni “Coupled experimental/simulation analysis as a tool for probing trap-related and high-electric-field phenomena in GaN HEMTs”, INVITED IEEE International Integrated Reliability Workshop (IIRW), October 8-12, 2017, Stanford Sierra, Conference Center Fallen Leaf Lake, CA, USA
  57. E. Zanoni, C. De Santi, N. Trivellin, M. Meneghini and G. Meneghesso, “Time-dependent failure mechanisms of GaN power devices”, INVITED, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2017), Chengdu, China, 04 – 07 July 2017
  58. E. Zanoni, A. Barbato, D. Bisi, C. De Santi, I. Rossetto, M. Ruzzarin, N. Trivellin, A. Chini, G. Meneghesso, M. Meneghini, INVITED “Role of Deep Levels and Time-dependent Breakdown Effects in Determining Performances and Reliability of Power GaN Devices”7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma), March 26 till March 31, Nagoya University, Nagoya, Japan2017
  59. M. Meneghini, A. Barbato, M. Borga, C. De Santi, M. Barbato, S. Stoffels, M. Zhao, N. Posthuma, S. Decoutere, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni, “Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects”, INVITED 64th International Electron Devices Meeting (IEDM 2018), pp. 30.5.1-30.5.4, San Francisco, CA, 1-5 December 2018