Publications

PAPERS:

Within these research activities Gaudenzio Meneghesso has published (including also the accepted paper not yet published) more than  1000  papers:

  • about 400  on peer reviewed international Joournals,
  • about 600 on International conferences (including more than 100 Invited talks and 12 “Best Paper Award”),
  • 12 book chapters.

He hold also 5 patents

 Bibliometric indexes (updated August 2023):

Scopus:

Documents: 774,
Tot. Citations 14729,
h-index: 56

Google Scholar:

Documents: 1096,
Tot. Citations 19440,
h-index: 67

Top 10 most cited Pubblications (updated August 2023)

  1. H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, ….. G. Meneghesso, …., Y. Zhang, “The 2018 GaN power electronics roadmap”, TOPICAL REVIEW, J. Phys. D: Appl. Phys. 51 (2018) 163001, Title of contribution: “Reliability of GaN power devices: normally-on and normally-off”, pp.18-20, ISSN: 00223727, doi: 10.1088/1361-6463/aaaf9d Cited 747 times.
  2. Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., Zanoni, E., Reliability of GaN high-electron-mobility transistors: State of the art and perspectives, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4497830, pp. 332-343. DOI: 10.1109/TDMR.2008.923743  Cited 536 times.
  3.  Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E., Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies, (2013) Journal of Applied Physics, 114 (7),  071101, DOI: 10.1063/1.4816434, Cited 353 times.
  4.  Bisi, D., Meneghini, M., De Santi, C., Chini, A., Dammann, M., Bruckner, P., Mikulla, M., Meneghesso, G., Zanoni, E. Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements (2013) IEEE Transactions on Electron Devices, 60 (10), art. no. 6605590, pp. 3166-3175.  DOI: 10.1109/TED.2013.2279021, Cited 303 times.
  5. Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U.K., Canali, C., Zanoni, E., Surface-related drain current dispersion effects in AlGaN-GaN HEMTs, (2004) IEEE Transactions on Electron Devices, 51 (10), pp. 1554-1561.  DOI: 10.1109/TED.2004.835025, Cited 280 times.
  6.  Meneghini, M., Trevisanello, L.-R., Meneghesso, G., Zanoni, E. A review on the reliability of GaN-based LEDs, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4539822, pp. 323-331.  DOI: 10.1109/TDMR.2008.921527, Cited 250 times.
  7.  Meneghini, M., Tazzoli, A., Mura, G., Meneghesso, G., Zanoni, E., A review on the physical mechanisms that limit the reliability of GaN-based LEDs, (2010) IEEE Transactions on Electron Devices, 57 (1), art. no. 5332356, pp. 108-118.  DOI: 10.1109/TED.2009.2033649, Cited 239 times.
  8.  Trevisanello, L., Meneghini, M., Mura, G., Vanzi, M., Pavesi, M., Meneghesso, G., Zanoni, E., Accelerated life test of high brightness light emitting diodes, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4472171, pp. 304-311.  DOI: 10.1109/TDMR.2008.919596, Cited 154 times.
  9.  Meneghesso, G., Rampazzo, F., Kordoš, P., Verzellesi, G., Zanoni, E., Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs, (2006) IEEE Transactions on Electron Devices, 53 (12), pp. 2932-2940.  DOI: 10.1109/TED.2006.885681, Cited 153 times.
  10.  Faqir, M., Verzellesi, G., Meneghesso, G., Zanoni, E., Fantini, F., Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs, (2008) IEEE Transactions on Electron Devices, 55 (7), pp. 1592-1602.  DOI: 10.1109/TED.2008.924437,  Cited 120 times.

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