Publications

Papers:

Within these research activities Gaudenzio Meneghesso has published (including also the accepted paper not yet published) about  800  papers:

  • 300  on peer reviewed international Joournals,
  • 500 on International conferences (including more than 100 Invited talks and 8 “Best Paper Award”),
  • 5 book chapters.

He hold also 5 patents

 Bibliometric indexes (updated October 2018):

Scopus:

Documents: 538,
Tot. Citations 7429,
h-index: 42

Google Scholar:

Documents: 670,
Tot. Citations 9738,
h-index: 47

 

Top 10 most cited Pubblications (updated October 2018)

  1. Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., Zanoni, E., Reliability of GaN high-electron-mobility transistors: State of the art and perspectives, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4497830, pp. 332-343. DOI: 10.1109/TDMR.2008.923743  Cited 386 times.
  2.  Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U.K., Canali, C., Zanoni, E., Surface-related drain current dispersion effects in AlGaN-GaN HEMTs, (2004) IEEE Transactions on Electron Devices, 51 (10), pp. 1554-1561.  DOI: 10.1109/TED.2004.835025, Cited 223 times.
  3.  Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E., Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies, (2013) Journal of Applied Physics, 114 (7),  071101, DOI: 10.1063/1.4816434, Cited 211 times.
  4.  Meneghini, M., Trevisanello, L.-R., Meneghesso, G., Zanoni, E. A review on the reliability of GaN-based LEDs, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4539822, pp. 323-331.  DOI: 10.1109/TDMR.2008.921527, Cited 181 times.
  5.  Meneghini, M., Tazzoli, A., Mura, G., Meneghesso, G., Zanoni, E., A review on the physical mechanisms that limit the reliability of GaN-based LEDs, (2010) IEEE Transactions on Electron Devices, 57 (1), art. no. 5332356, pp. 108-118.  DOI: 10.1109/TED.2009.2033649, Cited 162 times.
  6.  Bisi, D., Meneghini, M., De Santi, C., Chini, A., Dammann, M., Bruckner, P., Mikulla, M., Meneghesso, G., Zanoni, E. Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements (2013) IEEE Transactions on Electron Devices, 60 (10), art. no. 6605590, pp. 3166-3175.  DOI: 10.1109/TED.2013.2279021, Cited 141 times.
  7.  Trevisanello, L., Meneghini, M., Mura, G., Vanzi, M., Pavesi, M., Meneghesso, G., Zanoni, E., Accelerated life test of high brightness light emitting diodes, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4472171, pp. 304-311.  DOI: 10.1109/TDMR.2008.919596, Cited 121 times.
  8.  Meneghesso, G., Rampazzo, F., Kordoš, P., Verzellesi, G., Zanoni, E., Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs, (2006) IEEE Transactions on Electron Devices, 53 (12), pp. 2932-2940.  DOI: 10.1109/TED.2006.885681, Cited 105 times.
  9.  Faqir, M., Verzellesi, G., Meneghesso, G., Zanoni, E., Fantini, F., Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs, (2008) IEEE Transactions on Electron Devices, 55 (7), pp. 1592-1602.  DOI: 10.1109/TED.2008.924437,  Cited 94 times.
  10.  Meneghini, M., Stocco, A., Bertin, M., Marcon, D., Chini, A., Meneghesso, G., Zanoni, E., Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias, (2012) Applied Physics Letters, 100 (3), art. no. 033505, DOI: 10.1063/1.3678041, Cited 85 times.

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