Conference Papers

  1. C1    E.Zanoni, C.Tedesco, A.Neviani,  G.Meneghesso, “Reliability issues due to hot-electron effects  in GaAs-based MESFET’s and HEMT’s”, Proc. of The Electrochemical Society Meeting, , Volume 93-2, pp. 428-429, New Orleans, Louisiana, USA, October 10-15, 1993.
  2. C2    E.Zanoni, C.Tedesco, A.Neviani,  G.Meneghesso, “Reliability issues due to hot-electron effects  in GaAs-based MESFET’s and HEMT’s”, INVITED PAPER, H.J.Queisser, J.E. Chung, K.E. Bean, T.J. Shaffner, H. Tsuya (editors), Proceedings of the Symposium on “The degradation of the electronic devices due to device operation as well as cristalline and process-induced defects”, The Electrochemical  Society Inc. Pennington  N.J., USA, Proc. Vol. 94-1, pp. 111-124, 1994.
  3. C3    C.Canali, E.De Bortoli, G.Meneghesso, A.Neviani, A.Paccagnella L.Vendrame, E.Zanoni, “Instabilities induced by DX-center and impact-ionization hole injection in AlGaAs/InGaAs PM-HEMT’s”, Proc. of WOCSDICE ‘94, 18th European Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.34-35, Kinsale, Ireland, May 1994.
  4. C4     E.Zanoni, E.De Bortoli, G.Meneghesso, A.Neviani, L.Vendrame, A.Paccagnella C.Canali, “A new degradation mechanism induced by DX-center in AlGaAs/InGaAs PM-HEMT’s”, Proc. of ESSDERC ‘94, 24th European Solid State Device Research Conference, pp. 539-542, Edinburgh, Scotland, 11-15 September 1994. Print ISBN: 0863321579 (ISBN Sbagliato)
  5. C5    E. Zanoni, A. Dal Fabbro, L. Vendrame, G. Verzellesi, G. Meneghesso, P. Pavan A. Chantre, “A physics-based, accurate spice model of impact-ionization effects in bipolar transistors”, Proc. of  ESSDERC ‘94, 24th European Solid State Device Research Conference, pp. 181-184, Edinburgh, Scotland, 11-15 September 1994. Print ISBN: 0863321579 (ISBN Sbagliato)
  6. C6    E.Zanoni, A.Neviani, G.Meneghesso, E.De Bortoli, L.Vendrame, and A. Rizzato, “Hot-electron Induced effects, light emission, breakdown and reliability problems phenomena in GaAs MESFET’s AlGaAs/GaAs HEMT’s and AlGaAs/InGaAS pseudomorphic HEMT’s”, INVITED PAPER, Proc. of ESREF’94, European Symposium on Reliability and  Failure Analysis. pp 261-272, Glasgow Scotland, October 1994.
  7. C7    G. Meneghesso A. Paccagnella, E. De Bortoli, C. Morico, M. Cenedese, C. Canali, and E.Zanoni, “Low Temperature Instabilities in AlGaAs/InGaAs Pseudomorphic HEMT’s Induced by Trapping/Detrapping  Effects”, Proc. of EDMO‘94, 2th International Workshop on High Performance Electron  Devices for Microwave & Optoelectronic Applications, pp 49-54, Kings College London, England, November 1994.
  8. C8    C. Canali, P. Cova, E. De Bortoli, F. Fantini, G. Meneghesso, R. Menozzi, E.Zanoni, “Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT’s induced by hot-electrons”, Proc. of IEEE-IRPS 1995, International Reliability Physics Symposium, pp. 205-211, Las Vegas, Nevada, April 3-6, 1995, Print ISBN: 0-7803-2031-X, Doi: 10.1109/RELPHY.1995.513676
  9. C9    G. Meneghesso, Y. Haddab, E. De Bortoli, A. Paccagnella, E. Zanoni, C. Canali, “Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT’s”,  Proc. of  ESSDERC ‘95, 25th European Solid State Device Research Conference, pp. 169-172, The Hague, The Netherlands, 22-27 September 1995. Print ISBN: 286332182X
  10. C10    D. Sala, W. Kellner, T. Grave, M. Gatti, G. Meneghesso, L.Vendrame, G. Camporese, B. Bortolan, E.Zanoni, “Reliability of power pseudomorphic HEMT’s submitted to termal and hot-electrons tests”, Proc. of ESREF’95, European Symposium on Reliability and Failure Analysis. pp 435-440, Bordeaux, France, October 1995.
  11. C11    P. Cova, R. Menozzi, F. Fantini, M. Pavesi, G. Meneghesso, “A Study of Hot-Electron Degradation Effects in  pseudomorphic HEMT’s”, Proc. of ESREF’95, European Symposium on Reliability and Failure Analysis . pp 383-388, Bordeaux, France, October 1995.
  12. C12    E.Zanoni, G.Meneghesso, E.De Bortoli, L.Vendrame, “Failure Mechanism of AlGaAs/InGaAs Pseudomorphic HEMT’s”, INVITED PAPER, Proc. of RELECTRONIC’95, 9th Symposium on Quality and Reliability in Electronics, pp 365-375, Budapest, Hungary, October, 1995
  13. C13    G. Meneghesso, E. De Bortoli, P. Cova, R. Menozzi, “On Temperature and Hot Electron Induced Degradation in AlGaAs/InGaAs PM- HEMT’s”, Proc. of EDMO‘95 1995 Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications, , Kings College London, England, November 1995, pp. 136-141. Print ISBN: 0-7803-2537-0, Doi: 10.1109/EDMO.1995.493709
  14. C14    G. Meneghesso, Y. Haddab, C. Canali, E. Zanoni, “Correlation between permanent degradation of GaAs-based HEMT’s and current DLTS spectra”, Proc. of GAAS®96 Gallium Arsenide Application A Symposium , Paris CNAM, June 5th-7th 1996, pp 4A5.
  15. C15    G. Meneghesso, M. Matloubian, J.Brown, T.Liu, C. Canali, A. Mion, A. Neviani and E. Zanoni, “Open channel impact-ionization effects in InP-based HEMT’s and their dependence on channel quantization and temperature”, 54th IEEE Annual Device Research Conference Digest DRC 96, Santa Barbara, California USA, pp. 138-139, June 24-26, 1996.  Print ISBN: 0-7803-3358-6, DOI 10.1109/DRC.1996.546346
  16. C16    G. Meneghesso, G. Gasparetto, A. Paccagnella, D. Camin, G. Pessina, C. Canali, “Experimental Study of Deep levels in MESFETs”, Proc. of  ESSDERC ‘96, 26th European Solid State Device Research Conference, pp. 563-566, Bologna, Italy, 9-11 September 1996. Print ISBN: 286332196X
  17. C17    G. Meneghesso, M. Manfredi, M. Pavesi, U. Auer, P. Ellrodt, W. Prost, J.F. Tegude, C. Canali, E. Zanoni,”Anomalous impact-ionization gate current in high breakdown InP-based HEMT’s”, Proc. of  ESSDERC ‘96, 26th European Solid State Device Research Conference, pp. 1001-1004, Bologna, Italy, 9-11 September 1996. Print ISBN: 286332196X
  18. C18    G. Meneghesso, A. Neviani, R. Parisotto, M. Hafizi, W.E. Stanchina, C. Canali,  E. Zanoni, “Measurement of the electron ionization coefficient temperature dependence in InGaAs-based heterojunction bipolar transistors”, Proc. of  ESSDERC ‘96, 26th European Solid State Device Research Conference, pp. 447-450, Bologna, Italy, 9-11 September 1996. Print ISBN: 286332196X
  19. C19    G. Meneghesso, G. Gasparetto, A. Paccagnella, D. Camin, N.Fedyakin, G. Pessina, C. Canali, “Neutron Induced Damage in GaAs MESFETs”, NSS’96, IEEE Nuclear Science Symposium, Anaheim, California, November 2-9, 1996. Print ISBN: 0-7803-3534-1, Doi: 10.1109/NSSMIC.1996.590953
  20. C20    G. Meneghesso, J.R.M. Luchies, F. Kuper, A.J. Mouthaan, “Electron bean analysis of the turn-on speed of grounded-gate nMOS EDS protection transistor during Charged-Device-Model (CDM) stress pulses”,Proc. of ISTFA’96, 22nd International Symposium for Testing and Failure Analysis, pp. 257-262, Los Angeles California, November 18-22 1996. ISBN-10: 0871705826, ISBN-13: 978-0871705822
  21. C21    G. Meneghesso, A. Mion, A. Neviani, M. Matloubian, J. Brown, M. Hafizi, T. Liu, C. Canali, M. Pavesi, M. Manfredi and E. Zanoni, “Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMT’s”, Tech. Digest IEDM96, IEEE International Electron device meeting, pp- 43-46, San Francisco, California, December 8-11 1996. Print ISBN: 0-7803-3393-4, Doi: 10.1109/IEDM.1996.553118
  22. C22    G. Meneghesso, N. Grapputo, P. Colombo, M. Brambilla, P. Pavan, E. Zanoni, “HBM and CDM ESD stress test results in 0.6 μm CMOS structures”,Proc. of  ESSDERC ‘97, 27th European Solid State Device Research Conference, pp. 704-707, Stuttgart, Germany, 22-24 September 1997. Print ISBN: 2-86332-221-4, Doi:  10.1109/ESSDERC.1997.194526
  23. C23    G. Meneghesso, A. Neviani, M. Pavesi, M. Hurt, W.C.B. Peatman, M. Shur, C. Canali, E. Zanoni, “Parasitic bipolar effects leading to on-state breakdown  in 2D-MESFET’s”, Proc. of  ESSDERC ‘97, 27th European Solid State Device Research Conference, pp. 724-727, Stuttgart, D, 22-24 September 1997. Print ISBN: 2-86332-221-4, Doi:  10.1109/ESSDERC.1997.194531
  24. C24    G. Meneghesso, G. Peloso, A. Neviani, M. Hurt, W.C.B. Peatman, M. Shur, E. Zanoni, “Study of breakdown mechanism in 2D MESFET’s”,Proc. of WOCSDICE ‘97, 21th European Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.21-22, Scheveningen, NL, 25-28 May 1997.
  25. C25    C. Lanzieri, M. Peroni, A. Cetronio, L. Costa, G. Meneghesso, C. Canali, “Performance and reliability of GaAs based power HFETs” Proc. of GAAS®97 5th Gallium Arsenide Application A Symposium , pp. 109-112, Bologna, September 3th-5th 1997.
  26. C26    G. Meneghesso, P. Colombo, M. Brambilla, R. Annunziata, P. Pavan and E. Zanoni “Characterization of CMOS structures (0.6 μm process) submitted to HBM and CDM ESD stress test” , Proc. of ISTFA’97, 23nd Int. Symposium for Testing and Failure Analysis, pp. 315-320, Santa Clara CA, Oct. 27-31, 1997.
  27. C27    G. Meneghesso, J.R.M. Luchies, F.G. Kuper, and A.J. Mouthaan, “Measurements of the turn-on time in grounded-gate nMOS transistors under fast rise time stress pulses”, (INVITED PAPER) Proc. of 7th Annual RCJ Reliability Symposium, pp. 27-32 5-7 Nov.97.
  28. C28    G. Meneghesso, T. Grave, M. Manfredi, M. Pavesi, C. Canali and E. Zanoni “Electroluminescence analysis of multiplication effects in pseudomorphic HEMT’s” 22th European Workshop on Compound Semiconductor Devices and Integrated Circuits WOCSDICE 1998, pp 24-25, Zeuthen, Germany, May 24-27, 1998.
  29. C29    G. Meneghesso, A. di Carlo, M. Manfredi, M. Pavesi, C. Canali and E. Zanoni “Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT’s biased in impact-ionization regime”, 56th IEEE Annual Device Research Conference, pp. 36-37 University of Virginia, Charlottesville, VA, 22 Jun 1998-24 Jun 1998. Print ISBN: 0-7803-4995-4, Doi  10.1109/DRC.1998.731111
  30. C30    G. Meneghesso, C. Crosato, F. Garat, G. Martines, A. Paccagnella, E. Zanoni “DC, low Frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime”, GAAS®98 Conference Proceedings, Gallium Arsenide Application Symposium, pp. 539-544, RAI Centre, Amsterdam, The Netherlands, October 5-6 1998.
  31. C31    G. Meneghesso, A. Bartolini, G. Verzellesi, A. Cavallini, A. Castaldini, C. Canali, E. Zanoni, “Breakdown and low-temperature anomalous effects in 6H SiC JFETs ”, IEEE Tech. Digest IEDM98, International Electron device meeting, pp- 695-698, San Francisco, California, December 6-9, 1998.Print ISBN: 0-7803-4774-9, Doi: 10.1109/IEDM.1998.746452
  32. C32    G. Meneghesso, D. Buttari, E. Perin, C. Canali, E. Zanoni, “Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMT’s by means of an InP etch stop layer” Tech. Digest IEEE-IEDM98, International Electron Device Meeting, pp- 227-230, San Francisco, CA, December 6-9, 1998. Print ISBN: 0-7803-4774-9, Doi 10.1109/IEDM.1998.746341
  33. C33    G. Meneghesso, A. Cavallini, A. Castaldini, G. Verzellesi, C. Canali and E. Zanoni, “High field and low temperature behaviour of Lely-grown 6H SiC buried gate JFETs”, WSSM1, 1st International Workshop on Semiconducting and Superconducting Materials Turin, February 17-19, 1999
  34. C34    A. Castaldini, Cavallini,. Canali, G. Meneghesso and E. Zanoni, Deep Energy Levels In 6h- Sic JFET’s”, WSSM1, 1st Int.  Workshop on Semiconducting and Superconducting Mat.” Turin, Italy, Feb. 17-19, 1999
  35. C35    R. Gaddi, R. Menozzi, A. Castaldini, C. Lanzieri, G. Meneghesso, C. Canali and E. Zanoni,  “Bulk and Surface Effects of Hydrogen Treatment on Al/Ti Gate AlGaAs/GaAs Power HFETs”, Proc. of IEEE-IRPS 1999, International Reliability Physics Symposium, pp. 110-115, San Diego, CA, March 23-25, 1999. Print ISBN: 0-7803-5220-3, Doi:  10.1109/RELPHY.1999.761601
  36. C36    D. Dieci, P. Cova, R. Menozzi, C. Lanzieri, G. Meneghesso, C. Canali,  “Three-terminal off-state breakdown in AlGaAs/GaAs power HFETs: a temperature-dependent analysis of the gate reverse current”, Proc. of WOCSDICE ‘99, 23th European Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.47-48, Chantilly, France, May 26-28, 1999.
  37. C37    E. Zanoni, G.Meneghesso, D. Buttari, M. Maretto, G. Massari, “Hot Electrons and Reliability in HEMTs”, (INVITED PAPER) Proc. of WOCSDICE ‘99, 23th European Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.39-42, Chantilly, France, May 26-28, 1999.
  38. C38    A. Sleiman, L. Rossi, A. Di Carlo, P. Lugli, G. Zandler, G. Meneghesso E. Zanoni, “Study of Impact Ionization and Light emission in Pseudomorphic HEMT using Monte Carlo Simulation”, 11th III-V Semiconductor device Simulation workshop, Lille May 10-11, 1999, Francia
  39. C39
  40. C40    L. Rossi, A. Di Carlo, L. Tocca, A. Bonfiglio, M. Brunori, P. Lugli, G. Meneghesso, E. Zanoni, “Monte Carlo Simulation of Impact Ionization and Light Emission in Pseudomorphic HEMT’s” In Proc. of WOFE 99, Advanced Workshop on Frontiers in Electronics, pp. 103-104, Villard de Lans (Grenoble), France, May 31-June 4, 1999.
  41. C41    A. Di Carlo, L. Rossi, P. Lugli, G. Meneghesso, E. Zanoni, “Breakdown Triggering in PM-HEMT studied by means of Monte Carlo simulator”Proc. of ESSDERC ‘99, 29 European Solid State Device Research Conference, pp. 548-551, Leuven, Belgium 13-15 September 1999. Print ISBN: 2-86332-245-1
  42. C42    P. Cova, R. Menozzi, D. Dieci, C. Canali, M. Pavesi, G. Meneghesso, “Off.State Breakdown in GaAs Power HFETs”, Proc. of  ESSDERC ‘99, 29th European Solid State Device Research Conference, pp. 554-557, Leuven, Belgium 13-15 September 1999. Print ISBN: 2-86332-245-1
  43. C43    G. Meneghesso, E. Zanoni, “Breakdown mechanisms and hot carrier induced degradation in GaAs and InP-based HEMTs”, (INVITED PAPER) Proc. of HETECH99, 9th European Heterostructure Technology Workshop, Lille, France, September 27-28, 1999.
  44. C44    A. Sleiman, L. Rossi, A. Di Carlo, L. Tocca, A. Bonfiglio, M. Brunori, P. Lugli, G. Zandler, G. Meneghesso E. Zanoni, C. Canali, A. Cetronio, M. Lanzieri, M. Peroni, Experimental and Theoretical studies of near-breakdown phenomena in heterostructure FETs, Proc. of GAAS®99 5thGallium Arsenide Application A Symposium , pp. 84-87, Munich, Germany, October 4-5,1999.
  45. C45    D. Dieci, T. Tomasi, D. Buttari, G. Meneghesso, C. Canali, E. Zanoni, “Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs”, Proc. of EDMO‘99, 1999 Symposium on High Performance Electron  Devices for Microwave & Optoelectronic Applications, pp 93-98, Kings College London, England, November 1999.  Print ISBN: 0-7803-5298-X, Doi 10.1109/EDMO.1999.821466
  46. C46    G. Meneghesso, S. Santirosi, E. Novarini, C. Contiero, E. Zanoni,  “ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests”, INVITED PAPER at IEEE-IRPS 2000, International Reliability Physics Symposium, pp. 270-275, San Jose’, California, April 10-13, 2000. Print ISBN: 0-7803-5860-0, Doi: 10.1109/RELPHY.2000.843926
  47. C47    E. Zanoni, G. Meneghesso, D. Buttari, M. Maretto, G. Massari, “Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs”, IEEE-IRPS 2000, International Reliability Physics Symposium, pp. 243-249, San Jose’, California, April 10-13, 2000. Print ISBN: 0-7803-5860-0, Doi: 10.1109/RELPHY.2000.843922
  48. C48    G. Salviati, C. Zanotti-Fregonara, P.Cova, G. Meneghesso, E. Zanoni, “Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP based HEMTs”, 5th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2000, Heraklion, Crete, Greece, May 21-24 2000.
  49. C49    G. Meneghesso, R. Luise, A. Chini, D. Buttari, H. Yokoyama, T. Suemitsu, E. Zanoni “Characterization and reliability of InP-based HEMTs implemented with different process options”, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2000, Agean Sea, Greece,  May 29 – June 02, 2000.
  50. C50    D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D.Pavlidis S.S.H. Hsu, “Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs”, 12th International Conference on Indium Phosphide and Related Materials, IPRM2000, Page(s): 258 – 261, Williamsburg Marriott, Williamsburg, Virginia, 14-18 May 2000. Print ISBN: 0-7803-6320-5, Doi: 10.1109/ICIPRM.2000.850281, ISSN :  1092-8669
  51. C51    A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, C. Gaquiere, “Deep traps related effects in GaN MESFETs grown on sapphire substrate”, Proc. of HETECH2000, 10th European Heterostructure Technology Workshop, Gunzburg, Germany, September 17-19, 2000.
  52. C52    G. Meneghesso and  E. Zanoni, “InP Microelectronics Reliability”, 30th European Microwave Week, Short Course: “InP Microelectronics” organized by J. M. Dumas, Paris, France. October 2-6, 2000.
  53. C53    G. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, C. Gaquiere, “Diagnosis of trapping phenomena in GaN MESFETs”, Tech. Digest IEEE-IEDM2000, IEEE International Electron Device Meeting, pp. 389-392 San Francisco, California, December 11-13, 2000.  Print ISBN: 0-7803-6438-4, Doi:  10.1109/IEDM.2000.904338
  54. C54    A. Chini, F. Bruni, D. Buttari, G. Meneghesso, E. Zanoni, “ Current Collapse in AlGaN/GaN HEMTs ”, 25° Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe WOCSDICE 2001, pp.73-74,  Cagliari, 27-30 May 2001.
  55. C55    G. Meneghesso, A. Chini, E. Zanoni, G. Verzellesi, E. Tediosi, C. Canali, A. Cavallini, A. Castaldini, “Trap-Related Effects in 6H-SiC Buried-Gate JFET’s ”, 25° Work. on Compound Semiconductor Devices and Int. Circuits held in Europe WOCSDICE 2001, pp. 169-170, Cagliari, 27-30 May 2001.
  56. C56    G. Meneghesso, A. Chini, A. Maschietto, E. Zanoni, P. Malberti, M. Ciappa. “Electrostatic Discharge and Electrical Overstress on GaN/InGaN Light Emitting Diodes”, 23th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2001, pp. 249-254, Portland, Oregon USA, September 11-13, 2001. Print ISBN: 978-1-5853-7039-9
  57. C57    R. Depetro F. Mignoli A. Andreini C. Contiero, G. Meneghesso, E. Zanoni, “Experimental analysis and electro-thermal simulation of low- and high-voltage ESD protection bipolar devices in a Silicon-On-Insulator Bipolar-CMOS-DMOS technology”, 23th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2001, pp. 102-109, Portland, Oregon USA, September 11-13, 2001. Print ISBN: 978-1-5853-7039-9
  58. C58    G. Meneghesso and  E. Zanoni, “Traps related effects in SiC and GaN Based devices”,  EuMW 2001, 31th European Microwave Week, INVITED PAPER AT Short Course on: “Wide Bandgap semiconductors” organized by Prof. G. Ghione, London, England September 24-28, 2001.
  59. C59    G. Verzellesi, G. Meneghesso, A. Cavallini, E. Zanoni, C. Canali, “Two-Dimensional Numerical Simulation of Deep Level Effect in 6H-SiC Buried-Gate JFETs”, Proc. of HETECH2001, 11th European Heterostructure Technology Workshop, pp. 55-56, Padova, Italy, October 28-30, 2001.
  60. C60    A. Mazzanti, G. Verzellesi, C. Canali, A. Chini, G. Meneghesso, E. Zanoni, C. Lanzieri “Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs ” Proc. of HETECH2001, 11th Europ. Heterostructure Tech. Workshop, Padova (I), pp.73-74, Oct. 28-30, 2001.
  61. C61    D.Buttari, A. Chini, G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, U.K. Mishra, “Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT’s”, Proc. of HETECH2001, 11th European Heterostructure Technology Workshop, pp.47-48, Padova, Italy, October 28-30, 2001.
  62. C62    R. Pierobon, S. Buso, M. Citron, G. Meneghesso, G. Spiazzi, E. Zanoni “Characterization of Schottky SiC Diodes for Power Applications”, Proc. of HETECH2001, 11th European Heterostructure Technology Workshop, pp.57-58, Padova, Italy, October 28-30, 2001.
  63. C63    A. Mazzanti, G. Verzellesi, L. Vicini, C. Canali, A. Chini, G. Meneghesso, E. Zanoni, C. Lanzieri “Dependence of Impact Ionization and Kink on Surface-Deep-Level Dynamics in AlGaAs/GaAs HFETs”, Proc. of EDMO2001, 2001 Symposium on High Performance Electron  Devices for Microwave & Optoelectronic Applications, pp 137-142, Vienna, Austria, 15-16 November 2001. Print ISBN: 0-7803-7049-X, Doi 10.1109/EDMO.2001.974297
  64. C64    N. Armani, A. Chini, M. Manfredi, G. Meneghesso, M. Pavesi, V. Grillo, G. Salviati and E. Zanoni “Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy”, Proc. of XXII Microscopy of Semiconducting Materials, Oxford University, 25-29 March 2001;
  65. C65    G. Verzellesi, G. Meneghesso, A. Chini, A. Mazzanti, C. Canali, E. Zanoni, “ Deep-Level Characterization in 6H-SiC JFETs by Means of Two-Dimensional Device Simulations ”, Proc. 13th Worshop on Physical Simulation of Semiconductor Devices, Leeds (UK), March 2002.
  66. C66    R. Pierobon, S. Buso, M. Citron, G. Meneghesso, G. Spiazzi, E. Zanoni, “ Schottky SiC Diodes in Power Switching Applications ”, Silicon Workshop February, 6 – 8 2002 – INFM Sede, Genova, Italy
  67. C67    R. Pierobon, G. Meneghesso, S. Buso, M. Citron, G. Spiazzi, E. Zanoni, “ Schottky SiC Diodes in Power Applications ”, II WORKSHOP SiC 18-19 Marzo, 2002 CNR-MASPEC, Parma
  68. C68    G. Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, and I. Eliashevich “Failure modes and mechanisms of DC-aged GaN LEDs”, IWN 2002, Int. Workshop on Nitride Semiconductors, Aachen, Germany, 22-25 July 2002.
  69. C69    G. Meneghesso and  E. Zanoni, “Reliability of GaN-Based Devices”, EuMW 2002, 32th European Microwave Week, INVITED PAPER AT Short Course on: “Wide Bandgap semiconductors” organized by Dr. S. Delage, Milano – Italy , September 23-27, 2002.
  70. C70    G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, A. Castaldini, G. Scamarcio, S. Du, and I. Eliashevich, “Degradation Mechanisms of GaN-Based LEDs After Accelerated DC Current Aging”,  Tech. Digest IEEE-IEDM2002, IEEE International Electron Device Meeting, pp. 103-106, San Francisco, California, December 8-11, 2002. Print ISBN: 0-7803-7462-2, Doi: 10.1109/IEDM.2002.1175789
  71. C71    G. Verzellesi,  R. Pierobon, F. Rampazzo, G. Meneghesso, A. Chini, D. Buttari, U.K. Mishra, C. Canali and E. Zanoni, “Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT’s”,Tech. Digest IEEE-IEDM2002, IEEE International Electron Device Meeting, pp. 689-692, San Francisco, California, December 8-11, 2002. Print ISBN: 0-7803-7462-2, Doi: 10.1109/IEDM.2002.1175932
  72. C72    G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, M. Manfredi, S. Du, and I. Eliashevich, “Reliability analysis of Gan-Based LEDs for solid state illumination”, TWHM 2003, Topical Workshop on Heterostructure Microelectronics, Okinawa, Japan, January 21-24, 2003.
  73. C73    N. Armani, F. Rossi, G. Salviati, M. Pavesi, M. Manfredi, G. Meneghesso, S. Levada, E. Zanoni, S. Du, I. Eliashevich, A. Castaldini and A. Cavallini, “Luminescence properties of GaN LEDs after DC-aging”, 7th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors BIAMS, May 25-29, 2003
  74. C74     G. Croce, A. Andreini, L. Cerati, G. Meneghesso, L. Sponton, “ESD in SMART POWER processes”, Advances in Analogue Circuit Design Workshop Graz, April 16th, 2003.
  75. C75    G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, C. Canali, E. Zanoni, “Current Collapse in AlGaN/GaN HEMT’s analyzed by means of 2D device simulation”, 27° Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe WOCSDICE 2003, ,Furgen, Switzerland, 26-28 May 2003.
  76. C76    G. Meneghesso, F. Rampazzo, G. Schenato, L. Cecchetto, R. Pierobon, E. Zanoni, T.Suemitsu,T. Enoki, “Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs”, 27° Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe WOCSDICE 2003, ,Furgen, Switzerland, 26-28 May 2003.
  77. C77    G. Meneghesso, E. Zanoni “Danni da ESD sui circuiti integrati”, V Congresso Nazionale ESD, Padova 9 Maggio 2003.
  78. C78    G. Meneghesso G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni, “Reliability aspects of GaN microwave devices” , INVITED at EuMW 2003, 33th European Microwave Week, Short Course on: “Workshop on Reliability of Compound Semiconductor Devices” organized by Dr. M. Borgarino, Monaco – Germany , October 6-10, 2003.
  79. C79    G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni, “Instabilities and degradation in GaN-based devices”, INVITED Proc. of HETECH2003, 12th European Heterostructure Technology Workshop, pp. MonD2, La Casona del Pinar, San Rafael, , SPAIN, Oct. 12–15, 2003.
  80. C80    R. Pierobon, F. Rampazzo, G. Meneghesso, E. Zanoni, T.Suemitsu,T. Enoki, “RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs”, Proc. of HETECH2003, 12th European Heterostructure Technology Workshop, pp. MonD7, , La Casona del Pinar, San Rafael, Segovia, SPAIN, October 12 – 15, 2003.
  81. C81    G. Salviati, N. Armani, F. Rossi, M. Pavesi, M. Manfredi, G. Meneghesso, E. Zanoni, S. Du, I. Eliashevich, A. Castaldini and A. Cavallini, “Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs” 10th International Conference on Defects – Recognition, Imaging and Physics in Semiconductors, Batz sur Mer (France), 29 September – 2 Octobre 2003.
  82. C82    A. Castaldini, A. Cavallini, G. Salviati, F. Rossi, N. Armani, M. Pavesi, M. Manfredi, G. Meneghesso , S. Levada and E. Zanoni, “Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing”, GADEST 2003, Gettering and Defect Engineering in Semiconductor Technology, Fontaneallee, Zeuthen, Germany, 21-26 September 2003.
  83. C83    G. Verzellesi, A. Basile, A. Mazzanti, C. Canali, G. Meneghesso, E. Zanoni,“Study on the Origin of Dc-to-RF Dispersion Effects in GaAs- and GaN-Based Heterostructure FETs”, 18th annual Reliability Workshop on Compound Semiconductors, San Diego, California, Sunday, November 9, 2003.
  84. C84     S. Levada, G. Meneghesso, E. Zanoni, M. Pavesi, M. Manfredi, A. Cavallini, A. Castaldini, G. Salviati, N. Armani, F. Rossi, S. Du, I. Eliashevich “Degradation effects in InGaN/GaN light emitting diodes”, The 5th International Symposium on Blue Laser and Light Emitting Diodes, ISBLLED 2004  p. 173, Gyeongju, Korea, March 15-19 2004.
  85. C85    G. Meneghesso, S. Levada, E. Zanoni, G. Salviati, N. Armani, F. Rossi M. Pavesi, M. Manfredi, A. Cavallini, A. Castaldini, S. Du, I. Eliashevich “Failure Mechanisms of GaN-based LEDs related with instabilities in Doping Profile and Deep Levels”, IEEE-IRPS 2004, International Reliability Physics Symposium, pp. 474-478, Phoenix – Arizona, April 25-29, 2004, Print ISBN: 0-7803-8315-X, Doi: 10.1109/RELPHY.2004.1315374
  86. C86    R. Pierobon, F. Rampazzo, L. Corradini, G. Meneghesso, E. Zanoni, J. Bernát, M. Marso and P. Kordoš, ‘Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion’, Proc. of WOCSDICE 2004, 28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, pp. 13-14, Bratislava, May 17-19, 2004. ISBN: 80-227-2050-X
  87. C87     G. Meneghesso, S. Levada, M. Meneghini, E. Zanoni “Reliability of GaN-based LEDs”, INVITED Proc. of WOCSDICE 2004, 28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, p.29-32, Bratislava, May 17-19, 2004. ISBN: 80-227-2050-X
  88. C88     G. Meneghesso, E. Zanoni, “Reliability aspects of InP based HEMTs”, INVITED LECTURE at 16th International Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, May 31 – June 4, 2004. ISBN: 0-7803-8595-0
  89. C89    R. Pierobon, F. Rampazzo, F. Clonfero, T. De Pellegrin, M. Bertazzo, G. Meneghesso, E. Zanoni, T. Suemitsu, T. Enoki, ‘Study of Breakdown dynamics in InAlAs/InGaAs/InP HEMTs with Gate Length scaling down to 80 nm’, 16th International Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, May 31 – June 4, 2004. Print ISBN: 0-7803-8595-0, Doi: 10.1109/ICIPRM.2004.1442802
  90. C90    G. Meneghesso, M. Meneghini, S. Levada, E. Zanoni, A. Cavallini, A. Castaldini, V. Härle, T. Zahner, U. Zehnder, “Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep level transient spectroscopy”, Fourth International Conference on Solid State Lighting, Proc. of SPIE n. 5530,  pp. 251-259., 49th Annual Meeting, Denver, Colorado 3-6 August 2004. DOI: 10.1117/12.566159
  91. C91    A. Sleiman, A. Di Carlo, G. Verzellesi, G. Meneghesso, E. Zanoni “Current collapse associated with surface states in GaN-based HEMT’s. Theoretical/experimental investigations”, SISPAD 2004, Int. Conference on Simulation of Semiconductor Processes and Devices, Sept 2-4, 2004, Munich (D)
  92. C92    R. Pierobon, G. Meneghesso, E. Zanoni, F. Roccaforte, F. La Via, V. Raineri, ‘Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights’, 5th European Conference on Silicon Carbide and Related Materials, Bologna, Italy, August 31 – September 4, 2004
  93. C93    R. Pierobon, F. Rampazzo, D. Pacetta, C. Gaquiere, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni, ‘Analysis of hot carrier aging degradation in GaN MESFETs’, 5th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Page(s): 143 – 146 Smolenice, Slovakia, October 17–21, 2004. ISBN: 0-7803-8535-7,  DOI: 10.1109/ASDAM.2004.1441180
  94. C94    S. Bychikhin, L. K. J. Vandamme, J. Kuzmik, G.Meneghesso, D. Pogany “Low frequency noise characterization of the GaN LEDs”, 5th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Page(s): 85 – 86 Smolenice, Slovakia, October 17–21, 2004. ISBN: 0-7803-8535-7,  DOI: 10.1109/ASDAM.2004.1441163
  95. C95     R. Pierobon, F. Rampazzo, G. Meneghesso, E. Zanoni, J. Bernát, M. Marso, P. Kordoš, A. F. Basile, G. Verzellesi, ‘Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs’, Proc. of HETECH 2004, 13th European Heterostructure Technology Workshop, Koutouloufari, Crete, Greece, October 3-6, 2004
  96. C96     S. Levada, G. Meneghesso, G. Spiazzi, S. Buso, P. Fiorentin, D. Carraro, E. Zanoni, ‘Characterization Of Power LEDs For General Lighting Application’, Proc. of HETECH 2004, 13th European Heterostructure Technology Workshop, Koutouloufari, Crete, Greece, October 3-6, 2004
  97. C97    G. Meneghesso G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni, “Reliability aspects of GaN microwave devices”, INVITED at EuMW 2004, 34th European Microwave Week, Short Course on: “Wide Bandgap Research for Microwave applications: Materials, Devices and Circuit Issues” organized by Dr. S. Delage, Amsterdam , October 11-15, 2004.
  98. C98 G. Meneghesso, R. Pierobon, F. Rampazzo, G. Tamiazzo, E. Zanoni, J. Bernat, P. Kordoš, A.F. Basile , A. Chini, G. Verzellesi “Hot-Electron-Stress Degradation in Unpassivated GaN/AlGaN/GaN HEMTs on SiC”, IEEE-IRPS 2005, Int. Reliability Physics Symposium, pp.415-422, San Josè, CA, April 17-21, 2005. Print ISBN: 0-7803-8803-8, Doi: 10.1109/RELPHY.2005.1493122
  99. C99 A. Cester, S. Gerardin, A. Tazzoli, A. Paccagnella, E. Zanoni, G. Ghidini, and G. Meneghesso, ESD Induced Damage on Ultra-Thin Gate Oxide MOSFETs and its Impact on Device Reliability, IEEE-IRPS 2005, International Reliability Physics Symposium, pp.84-90, San Josè, California,  April 17-21, 2005.
  100. C100 L. Vendrame, L. Bortesi, M. Biasio and G. Meneghesso, “Time domain approach for the evaluation of RC delays effects in ULSI interconnect lines”, IEEE SPI-2005, Proc. 9th IEEE Workshop On Signal Propagation On Interconnects, Garmisch-Partenkirchen, pp. 139-142, Germany, May 10-13, 2005. DOI: 10.1109/SPI.2005.1500925, ISBN: 0-7803-9054-7
  101. C101 F.Rampazzo, G. Meneghesso, R. Pierobon,G. Tamiazzo, E. Zanoni,P. Kordoš, J. Bernat, “Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs”, WOCSDICE 2005, 29th Workshop on Compound Semiconductor Devices and Integrated Circuits, pp. 137-139, Cardiff – UK, May 16-18, 2005. ISBN: 0-86341-516-4
  102. C102 S. Levada, D. Carraro, E. Favaro, M. Meneghini, A. Tazzoli, S. Buso, G. Spiazzi, G. Meneghesso, E. Zanoni, “Factors limiting the High Brightness InGaN LEDs performance at high injection current bias”, WOCSDICE 2005, 29th Workshop on Compound Semiconductor Devices and Integrated Circuits, pp. 191-193, Cardiff, UK, May 16-18, 2005.  ISBN: 0-86341-516-4
  103. C103 G. Spiazzi, S. Buso, G. Meneghesso, “Analysis of a High-Power-Factor Electronic Ballast for High Brightness Light Emitting Diodes”, PESC 2005, 36th IEEE Power Specialist Conference, Recife, Brasil, June 12-16 2005, pp. 1494-1499.
  104. C104     S. Bychikhin, L. K. J. Vandamme, J. Kuzmik, G. Meneghesso, S. Levada, E. Zanoni, D. Pogany, “Accelerated aging of GaN light emitting diodes studied by 1/f and RTS noise”, ICNF‘2005, 18th Int. Conference on Noise and Fluctuations, Salamanca, Spain 19-23 September 2005.
  105. C105 R. Gaddi, A. Gnudi, A Tazzoli, G. Meneghesso, E. Zanoni, “Reliability of RF-MEMS”, Focussed Session on “Reliability of emergine technologies for microwave applications” at the EuMW2005, European Microwave Week, Gallium Arsenide and Other Semiconductor Application Symposium, 2005.. Page(s): 269 – 272 Paris 3-7 October 2005. Print ISBN: 88-902012-0-7
  106. C106 A. Tazzoli, A. Gnudi, R. Gaddi, V. Peretti, E. Zanoni, G. Meneghesso, “Resistive RF-MEMS Switches Characterization and Reliability”, Proc. of HETECH 2005, 14th European Heterostructure Technology Workshop,  Bratislava, October 2-5, 2005
  107. C107 A. Sozza, C. Dua, N. Sarazin, E. Morvan, S.L. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G.Meneghesso, E. Zanoni, A. Curutchet, N. Malbert and N. Labat, “Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques”, Proc. of HETECH 2005, 14th European Heterostructure Technology Workshop,  Bratislava, October 2-5, 2005
  108. C108 M. Meneghini, L.-R. Trevisanello, S. Levada, G. Meneghesso, G. Tamiazzo, E. Zanoni, T. Zahner, U. Zehnder, V. Härle, U. Strauß, “Failure mechanisms of gallium nitride LEDs related with passivation”, Tech. Digest IEEE-IEDM2005, IEEE International Electron Device Meeting, pp.1031-1034, Washington DC, December 5-7, 2005. Print ISBN: 0-7803-9268-X, Doi: 10.1109/IEDM.2005.1609534
  109. C109 A. Sozza, C. Dua, E. Morvan, M. A. diForte-Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert , N. Labat, B. Grimbert and J.-C. De Jaeger, “Evidence of Traps Creation in GaN/AlGaN/GaN HEMTs After a 3000 Hour On-state and Off-state Hot-electron Stress”, Tech. Digest IEEE-IEDM2005, IEEE International Electron Device Meeting, pp.601-604, Washington DC, December 5-7, 2005. Print ISBN: 0-7803-9268-X, Doi: 10.1109/IEDM.2005.1609416
  110. C110 A. Castaldini, A. Cavallini, L. Rigutti, M. Meneghini, S. Levada, G. Meneghesso, E. Zanoni , V. Härle, T. Zahner, and U. Zehnder, “Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy”, MRS Fall Meetings, Symposium FF: GaN. AlN, InN and Related Materials, Boston MA, Novembre 28 – December 2, 2005, 2005,
  111. C111 S. Levada, M. Meneghini, E. Zanoni, S. Buso, G. Spiazzi, G. Meneghesso, G. Mura, S. Podda, M. Vanzi, “High Brightness InGaN LEDs degradation at high injection current bias”, Proc. Of IEEE-IRPS 2006, International Reliability Physics Symposium, pp. 615-616, San Josè, California,  March 26-30, 2006.
  112. C112 A. Tazzoli, V. Peretti, R. Gaddi, A. Gnudi, E. Zanoni, G. Meneghesso, “Reliability issues in RF-MEMS switches submitted to cycling and ESD test”, Proc. of IEEE-IRPS 2006, International Reliability Physics Symposium, pp. 410-415, San Josè, California,  March 26-30, 2006. Print ISBN: 0-7803-9498-4, Doi: 10.1109/RELPHY.2006.251253
  113. C113 M. Meneghini, L.R. Trevisanello, T. Zahner, U. Zehnder, U. Strauss, G. Meneghesso and E. Zanoni, “High temperature instabilities of GaN LEDs related to passivation”, Proc. Of 30th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2006, pp. 137-139, Fiskebäckskil, Sweden, May 14-17, 2006.   ISSN: 1652-0769
  114. C114 F. Zanon, F. Danesin, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella, “Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors”, Proc. Of 30th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2006 pp. 153-155, Fiskebäckskil, Sweden, May 14-17, 2006.
  115. C115 A. Andreini, L. Cerati and G. Meneghesso, “Review of Approaches and Solutions for Effective ESD Protection Devices and Schemes in Smart Power ICs”, INVITED – Proc. Of 3rd EOS/ESD/EMI WORKSHOP, “Immunity of electronic applications to electrical (EOS/ESD) and electromagnetic (EMI) stresses: From system level to chip level”, pp. 3-10, Toulouse, May 18-19, 2006.
  116. C116    E. Orietti, N. Montemezzo, S. Buso, A. Neviani, G. Meneghesso, G. Spiazzi, “Kuijk Bandgap Susceptibility to RF Interferences: Measurements, Modeling and ProvisionsMontemezzo”, Proc. Of 3rd EOS/ESD/EMI WORKSHOP, “Immunity of electronic applications to electrical (EOS/ESD) and electromagnetic (EMI) stresses: From system to chip level”, pp. 47-49, Toulouse, May 18-19, 2006.
  117. C117 A. Tazzoli, L. Cerati, M. Dissegna, A. Andreini, E. Zanoni, G. Meneghesso, “Development of ESD protection structures for BULK and SOI BCD6 technology”, Proc. Of IEEE-ISPSD 2006, International Symposium on Power Semic. Dev. and ICs, pp. 361-364, Napoli, June 4-8, 2006.  Print ISBN: 0-7803-9714-2, Doi: 10.1109/ISPSD.2006.1666146
  118. C118 E. Orietti, N. Montemezzo, S. Buso, G. Meneghesso, A. Neviani and G. Spiazzi, “On the Key Role of the Brokaw Cell on Bandgap Immunity toEMI”, Proc. Of  CIPS 2006, 4th International Conference on Integrated Power Electronics Systems, pp. 279-284, June 7 to 9, Naples (I), 2006.  ISBN: 3-8007-2972-5
  119. C119 M. Meneghini, S. Buso, S. Podda, G. Spiazzi, L. R. Trevisanello, G. Meneghesso and E. Zanoni, “Stability and performance evaluation of high-brightness light-emitting diodes under DC and pulsed bias conditions”, Sixth International Conference on Solid State Lighting” –  Proc. SPIE 6337, 63370R Symposium on Optics & Photonics, San Diego, California USA, August 13-17 2006. DOI: 10.1117/12.683803
  120. C120 N. Montemezzo, E. Orietti, S. Buso, G. Meneghesso, A. Neviani and G. Spiazzi, “A Discussion of the Immunity of a Brokaw Bandgap to EMI”, Proc. Of IEEE EMC 2006, IEEE International Symposium on Electromagnetic Compatibility, pp. 796-801, Portland, OR, 14-18 August 2006 ISBN 1-4244-0294-8, Print ISBN: 1-4244-0293-X, Doi:  10.1109/ISEMC.2006.1706419
  121. C121 N. Montemezzo, E. Orietti, S. Buso, G. Meneghesso, A. Neviani and G. Spiazzi “Brokaw bandgap susceptibility to rf interferences: measurements and analyses”, Proc. Of EMC Europe 2006,  Int. Symposium on Electromagnetic Compatibility, pp. 900-905., Barcelona Spain, 4-8 Sept. 2006.
  122. C122. M. Heer, S. Bychikhin, V. Dubec, D. Pogany, E. Gornik, M. Dissegna, L. Cerati, L. Zullino, A. Andreini, A. Tazzoli, G. Meneghesso, “Analysis of triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices”, Proc. Of 28th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2006, pp. 275-284, Tucson, AZ, USA  Sept. 10-15, 2006. Print ISBN: 978-1-5853-7115-0
  123. C123. A. Tazzoli, V. Peretti, E. Zanoni, G. Meneghesso, “Transmission line pulse (TLP) testing of radio frequency (RF) micro-machined micro-electromechanical systems (MEMS) switches”, (Premiato col BEST Student Paper AWARD), Proc. Of 28th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2006, pp. 295-303, Tucson, Arizona, USA  September 10-15, 2006. Print ISBN: 978-1-5853-7115-0
  124. C124 M. Faqir, A. Chini, G. Verzellesi, F. Fantini, F. Rampazzo, G. Meneghesso, E. Zanoni, J. Bernat, P. Kordoš, “Study of High-Field Degradation Phenomena in GaN-capped AlGaN/GaN HEMTs”,Proc. of HETECH 2006, 15th European Heterostructure Technology Workshop, Manchester, October 1-3, 2006
  125. C125 A. Tazzoli, V. Peretti, D. Bozzato, E. Zanoni, G. Meneghesso, “Characterization Issues and ESD Sensitivity of RF-MEMS Switches”, Workshop On MEMS Reliability, 17th European Symp. Reliability of Electron Devices, Failure Physics and Analysis, Wuppertal – Germany 3rd – 6th October 2006.
  126. C126    G. Meneghesso, A. Andreini, “Effective ESD protection for Mixed Power BCD processes on Bulk and SOI substrates”, INVITED TUTORIAL at ESREF 2006, 17th European Symposium Reliability of Electron Devices, Failure Physics and Analysis, Wuppertal – Germany 3rd – 6th October 2006.
  127. C127    M. Faqir, A. Chini, G. Verzellesi, F. Fantini, F. Rampazzo, G. Meneghesso, E. Zanoni, J. Bernat, P. Kordoš, “Physical Investigation Of High-Field Degradation Mechanisms In Gan/Algan/Gan HEMTs”, ROCS 2006, Reliability Of Compound Semiconductors Workshop, San Antonio (TX) Nov. 12, 2006- Print ISBN: 0-7908-0113-2, Doi: 10.1109/ROCS.2006.323400
  128. C128 G. Meneghesso,  A. Chini, E. Zanoni, “Transient Phenomena in GaAs and  GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications” EuMW 2006, TUTORIAL: “WS6 (EuMIC/EUMC), Terahertz Devices, Design, Modelling and Characterisation”European Microwave Week 2006, Manchester, UK, 10-15 September 2006.
  129. C129 M. Meneghini, L.-R. Trevisanello, R. Penzo, M. Benedetti, U. Zehnder, U. Strauss, G. Meneghesso and E. Zanoni, “Reversible degradation of GaN LEDs related to passivation”, IEEE Proc. International Reliability Physics Symposium, IRPS 2007, pp. 457-461, Phoenix, AZ, April 15-19, 2007, Print ISBN: 1-4244-0919-5, Doi: 10.1109/RELPHY.2007.369933
  130. C130    M. Meneghini, L. Trevisanello, G. Meneghesso, and E. Zanoni, “Study of the reliability and degradation mechanisms of GaN LEDs”, (INVITED), Proc. of the 5th International Workshop on Industrial Technologies for Optoelectronic Semiconductors: Reliability and Standardization of LED/Solid State Lighting, IWITOS07, Seoul, Corea, January 30, 2007, pp. 37-38, 2007
  131. C131    M. Meneghini, L. Trevisanello, G. Meneghesso, E. Zanoni, “High temperature instabilities of GaN LEDs related to passivation”, (INVITED), presented at the 43rd Annual Workshop on Compound Semiconductor Materials and Devices – WOCSEMMAD ’07, February 18-21, Savannah, Georgia, 2007
  132. C132    M. Meneghini, L. Trevisanello, U. Zehnder, G. Meneghesso, E. Zanoni, “High temperature instabilities of ohmic contacts on Mg-doped gallium nitride”, Proc. of  WOCSDICE2007, 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, (ISBN 978-88-6129-088-4), pp. 31-34, May 20-23th, 2007 Venice, Italy
  133. C133    F. Zanon, F. Danesin, G. Montanari, G. Meneghesso, E. Zanoni, “Investigation on charge trapping phenomena leading to kink effect on AlGaN/GaN HEMTs”, Proc. of  WOCSDICE2007, 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, (ISBN 978-88-6129-088-4), pp. 89-92, May 20-23th, 2007 Venice, Italy
  134. C134    M. Faqir, A. Chini, G. Verzellesi, F. Fantini, F. Rampazzo, G. Meneghesso,E. Zanoni, P. Kordoš “Analysis of High-Electric-Field Degradation in ALGAN/GAN HEMTs”, Proc. of  WOCSDICE2007, 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, (ISBN 978-88-6129-088-4), pp. 101-104, May 20-23th, 2007 Venice, Italy
  135. C135    G. Meneghesso, C. Dua, M. Peroni, M. Uren and E. Zanoni, “Parasitic effects and reliability issues on GaN based HEMTs” (INVITED) proc. of  2007 International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center, Ibaraki, Japan, 2007, pp. 160-161. ISBN: 4-901070-38-X
  136. C136    M. Dissegna, L. Cerati, L. Cecchetto, E. Gevinti, A. Andreini, A. Tazzoli, G. Meneghesso, “CDM circuit simulation of a HV Operational Amplifier realized in 0.35μm Smart Power technology”, Proc. Of 29th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2007, pp. 58-67, Disneyland, Hotel Anaheim, CA, USA, September 16-21, 2007 ISBN: 978-1-58537-136-5, Doi:  10.1109/EOSESD.2007.4401732
  137. C137    A. Tazzoli, F. Danesin, E. Zanoni, G. Meneghesso, “ESD Robustness of AlGaN/GaN HEMT Devices”, Proc. Of 29th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2007, pp. 264-272, Disneyland, Hotel Anaheim, CA, USA, September 16-21, 2007. ISBN: 978-1-58537-136-5, Doi: 10.1109/EOSESD.2007.4401762
  138. C138 S. Gerardin, A. Cester, A. Tazzoli, A. Griffoni, G. Meneghesso, A. Paccagnella, “Electrostatic discharge effects in irradiated fully depleted SOI MOSFETS with ultra-thin gate oxide”, 2007 IEEE Nuclear and Space Radiation Effects Conf. (NSREC2007),  July 23-27, 2007, Waikiki Beach, Honolulu, Hawaii.
  139. C139    L.-R. Trevisanello, M. Meneghini, G. Mura C. Sanna, S. Buso, G. Spiazzi,M. Vanzi, G. Meneghesso, E. Zanoni, “Thermal stability analysis of High Brightness LED during high temperature and electrical aging”, Proceedings of the SPIE, Volume 6669, pp. 666913 (2007). Presented at 7th International Conference on Solid State Lighting,  San Diego (CA), Aug. 2007. DOI: 10.1117/12.732398
  140. C140    L. Trevisanello, M. Meneghini, U. Zehnder, B. Hahn, G. Meneghesso, E. Zanoni, “High temperature instabilities of ohmic contacts on p-GaN”, E-MRS 2007 Spring Meeting,  SYMPOSIUM F – Novel Gain Materials and Devices based on III-N-V compounds, May 28 – June 1, 2007, Strasbourg, France
  141. C141    Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, “Characterization, modeling and reliability of compound semiconductor microelectronic and optoelectronic devices”, Giornata della Ricerca Giapponese.
  142. C142    M. Meneghini, L. Trevisanello, U. Zehnder, G. Meneghesso, and E. Zanoni, “Thermal degradation of InGaN/GaN LEDs ohmic contacts”, 7th Int’l Conference of Nitride Semiconductors, ICNS, 2007, Las Vegas, Nevada, USA Sept.16-21, 2007
  143. C143    A. Tazzoli, F. Danesin, C. Ongaro, F. Rampazzo, F. Zanon, E. Zanoni, G. Meneghesso, “High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices”, HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus, September 2-5, 2007, Tu 1.4
  144. C144    A. Tazzoli, V. Peretti, G. Meneghesso, “Long Term Actuation Issues of Ohmic RF-MEMS Switches”, HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus, Sep. 2-5, 2007, Mo 1.4
  145. C145    A. Tazzoli, V. Peretti, G. Meneghesso, “Characterization Issues and Charge Trapping Effects on RF-MEMS switches”, HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus, September 2-5, 2007, Tu 2.5
  146. C146    M. Faqir, G. Verzellesi, F. Fantini, A. Cavallini, A. Castaldini, F.Danesin, G. Meneghesso, E. Zanoni, “Interpretation of Buffer-Trap Effects in AlGaN-GaN HEMTs”, HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus, September 2-5, 2007, Tu 1.3
  147. C147    A. Pinato, S. De Jonge, D. Gay, K.Myny, G. Meneghesso, E. Zanoni, J. Genoe, P. Heremans, “Integration of pentacene transistors on Parylene foil”, HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus, September 2-5, 2007, Mo 2.5
  148. C148    N. Trivellin, M. Meneghini, L. Trevisanello, U. Zehnder, G. Meneghesso, and E. Zanoni, “High temperature degradation of ohmic contacts on p-GaN, HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus, September 2-5, 2007, Tu 1.6
  149. C149    F. A. Marino, G. Meneghesso, “Alternative ESD Protection Structure in CMOS Technology for the Manufacture of High-Density Integration Circuits”, HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus, September 2-5, 2007, Tu 2.6
  150. C150    A. Tazzoli, V. Peretti, G. Cellere, G. Meneghesso, “RF-MEMS Switches Reliability for Long Term Spatial Applications”, 6th ESA Round Table on Micro & Nano Technologies for Space Applications, ESA/ESTEC Noordwijk, The Netherlands, 8 – 12 October 2007
  151. C151    E. Zanoni, G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, F. Zanon “A Review of Failure Modes and Mechanisms of GaN-based HEMT’s”, INVITED at IEDM07, Tech. Digest, IEEE Int. Electron Device Meeting, pp. 381-384, Washington DC, Dec. 10-12, 2007. ISBN: 978-1-4244-1507-6, Doi: 10.1109/IEDM.2007.4418952
  152. C152    G. Meneghesso, C. Ongaro, E. Zanoni, C. Brylinski, M. A. di Forte-Poisson, V. Hoel, J.C. de Jaeger, R. Langer, H. Lahreche, P. Bove, J. Thorpe, “Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates”, Tech. Digest, IEEE IEDM07, IEEE International Electron Device Meeting, pp. 401-404, Washington DC, December 10-12, 2007. Print ISBN: 978-1-4244-1507-6, DOI: 10.1109/IEDM.2007.4418957
  153. C153    F. A. Marino, G. Meneghesso, “Alternative MOS Devices for the Manufacture of High-Density ICs”, ISDRS 2007,, University of Maryland,  Maryland, USA, December 12-14, 2007. ISBN: 978-1-4244-1892-3, Doi: 10.1109/ISDRS.2007.4422293
  154. C154    G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, F.Zanon, E. Zanoni “Degradation of GaN HEMT at high drain voltages”, ISMOT-2007, 11th International Symposium on Microwave and Optical Technology pp. 181-184, Monte Porzio Catone, Roma – ITALY, December 17-21, 2007. ISBN: 978-88-548-1476-9
  155. C155    M. Meneghini, L. Trevisanello, G. Mura, M. Vanzi, G. Meneghesso and E. Zanoni “Study of the factors that limit the reliability of GaN-based LEDs at high temperature levels”, (INVITED), Proc. of the 6th International Workshop on Industrial Technologies for Optoelectronic Semiconductors (IWITOS08): Reliability and Standardization of LED/Solid State Lighting, Seoul, Corea, January 29, 2008, 2008.
  156. C156    G. Meneghesso, “Hot electrons and High electric Fields in GaN-HEMTs and their impact on device reliability”, (INVITED), 44th WOCSEMMAD ’08,  The Workshop on Compound Semiconductor Materials and Devices, Palm Springs, CA February 17-20, 2008
  157. C157    A. Griffoni, G. Meneghesso, and A. Paccagnella, “Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology”, Presented at RADFAC2008, 19th March 2008 – Mol (Belgium)
  158. C158    G. Meneghesso, and A. Tazzoli, “New Issues on Characterisation and Reliability of MEMS Switches”, (INVITED), “Workshop on RF MEMS and MEMS based Sensors for Security, Defence and Aerospace” Rome, April 3 rd 2008.
  159. C159    G. Meneghesso, A. Tazzoli, F. A. Marino, M. Cordoni, P. Colombo, “Development of a new high holding voltage SCR-based ESD protection structure”, INVITED – Plenary Session at IEEE International Reliability Physics Symposium, IRPS 2008, Phoenix, AZ, pp. 3-8, April 27- May 1, 2008. Print ISBN: 978-1-4244-2049-0, Doi: 10.1109/RELPHY.2008.4558856
  160. C160    M. Meneghini, G. Meneghesso, N. Trivellin, L.R. Trevisanello, K. Orita, M. Yuri, E. Zanoni, “Electro-thermally Activated Degradation of Blu-Ray GaN-based Laser Diodes”, IEEE Int. Reliability Physics Symposium, IRPS 2008, Phoenix, AZ, pp. 424-427, April 27- May 1, 2008 Print ISBN: 978-1-4244-2049-0, Doi: 10.1109/RELPHY.2008.4558922
  161. C161    M. Meneghini, N. Trivellin, L.R. Trevisanello, A. Lunev, J. Yang, Y. Bilenko, W. Sun, M. Shatalov, R. Gaska, E. Zanoni, G. Meneghesso, “Combined Optical And Electrical Analysis of AlGaN-Based Deep-UV LEDs Reliability”, IEEE International Reliability Physics Symposium, IRPS 2008, Phoenix, AZ, pp. 441-445,  April 27- May 1, 2008. Print ISBN: 978-1-4244-2049-0, Doi: 10.1109/RELPHY.2008.4558925
  162. C162    A. Tazzoli, V. Peretti, E. Autizi, G. Meneghesso, “Suspensions Shape Impact on the Reliability of Ohmic RF-MEMS Redundancy Switches”, IEEE Int. Reliability Physics Symposium, IRPS2008, pp. Phoenix, AZ, pp. 510-515, April 27-May 1, 2008. Print ISBN: 978-1-4244-2049-0, Doi: 10.1109/RELPHY.2008.4558938
  163. C163    A. Griffoni, A. Tazzoli, S. Gerardin, G. Meneghesso, “ESD Sensitivity of 65-nm Fully Depleted SOI MOSFETs With Different Strain-Inducing Techniques”, 2nd International Electrostatic Discharge Workshop IEW 2008, Domaine de Pinsolle, Port D’Albret, FRANCE, pp. 162-183, May 12-15, 2008 ISBN: 1-58537-150-5
  164. C164    F. A. Marino, G. Meneghesso “Alternative GGnMOS Triggered SCR ESD Protection Structure in CMOS Technology for the Manufacture of High- Density Integration Circuits”, 2nd International Electrostatic Discharge Workshop IEW 2008, Domaine de Pinsolle, Port D’Albret, FRANCE, pp. 329-338, May 12-15, 2008. ISBN: 1-58537-150-5
  165. C165    F. Zanon, F. Danesin, A. Tazzoli, G. Montanari, A. Chini, J. Thorpe, C. Gaquière, G. Meneghesso, and E. Zanoni, “High Power Performances of GaN HEMT On SopSiC Substrate”, 32  Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008,  Leuven, Belgium, pp. 33-34, May 18-21, 2008.
  166. C166    M. Faqir, G. Verzellesi, A. Chini, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, N. Labat, A. Touboul, C. Dua, “Effects Of Surface And Buffer Traps In Passivated Algan-GaN HEMTs”, 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008, Leuven, Belgium, pp. 111-112, May 18-21, 2008.
  167. C167    N. Trivellin, M. Meneghini, G. Meneghesso, L.R. Trevisanello,  K. Orita, M. Yuri, D. Ueda, K. Yamanaka, E. Zanoni, “Analysis of the Degradation of Blu-Ray Laser Diodes”, 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008,  Leuven, Belgium, pp. 181-182, May 18-21, 2008
  168. C168    M-A di Forte Poisson, N Sarazin, M. Magis, M.Tordjman, J.Di Persio, R. Langer, M.Guziewicz, L.Thoth, B.Pecz, J.Thorpe, E. Morvan, C.Gaquière, G. Meneghesso, “GaAlN/GaN HEMT heterostructures grown on “SiCopSiC” composite substrates for HEMT application”, 14th Int. Conference of Metalorganic Vapor Phase Epitaxy, ICMOVPE XIV, Metz, France – June 1- 6, 2008
  169. C169    A. Tazzoli, E. Autizi, V. Peretti, G. Meneghesso, “Stiction Induced by Dielectric Breakdown on RF-MEMS Switches, Proc. of 9th. International Symposium on RF MEMS and RF Microsystems, MEMSWAVE 2008, Heraklion June 30-July 3, 2008.
  170. C170    A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, C. Claeys “Microdose and breakdown effects induced by heavy ions on sub 20-nm triple-gate SOI FETs”, Proc. of  IEEE Nuclear and Space Radiation Effects Conference (NSREC2008), Tucson, Arizona, July 14-18, 2008.
  171. C171    E. Gevinti, L. Cerati, M. Sambi, M. Dissegna, L. Cecchetto, A. Andreini, A. Tazzoli, G. Meneghesso,  “Novel 190V LIGBT-based ESD Protection for 0.35µm Smart Power Technology Realized on SOI Substrate”, 30th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2008, pp. 211-220, Westin LaPaloma Tucson, Arizona, USA  Sept. 7-12, 2008 – ISBN: 978-1-58537-146-4
  172. C172    A. Griffoni, A. Tazzoli, S. Gerardin, G. Meneghesso, E. Simoen, C. Claeys, “Electrostatic Discharge Effects in Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques” 30th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2008, pp. 59 – 66, Westin LaPaloma Tucson, Arizona, USA  September 7-12, 2008 – ISBN: 978-1-58537-146-4
  173. C173    A. Tazzoli, V. Peretti, E. Autizi, G. Meneghesso, “EOS/ESD Sensitivity of Functional rf-MEMS Switches”, Proc. Of 30th Electrical Overstress/Electrostatic Discharge Symposium EOS/ESD 2008, pp. 272-280 , Westin LaPaloma Tucson, Arizona, USA  September 7-12, 2008 – Print ISBN: 978-1-58537-146-4
  174. C174        A.Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A.Nackaerts, “Dose Enhancement due to Interconnections in Deep- Submicron MOSFETs Exposed to X-Rays”, 8th European Workshop on Radiation and Its Effects on Components and Systems – RADECS 2008, Page(s): 432 – 437, Jyväskylä, Finland, September 10th to 12th 2008.  ISBN: 978-1-4577-0481-9, DOI: 10.1109/RADECS.2008.5782758
  175. C175    E. Zanoni, G. Meneghesso, C. Dua, M. Peroni, M. Uren, “Failure mechanisms of GaN-based trasnsistors in on- and off-state”, (INVITED) International Conference on Solid State Devices and Materials (SSDM 2008), pp. 778-779, Tsukuba, Ibaraki, Japan, 2007,  September 23-26, 2008, ISBN:978-4-903968-60-5
  176. C176    F. Zanon, F. Danesin, A. Tazzoli, M. Meneghini, N. Ronchi, A. Chini, P. Bove, R. Langer, E. Zanoni, and G. Meneghesso, “ Reliability aspects of GaN-HEMTs on composite substrates”, INVITED at 7th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM ’08, pp. 23-30, Smolenice, Slovakia, October 12–16, 2008. ISBN: 978-1-4244-2325-5, DOI: 10.1109/ASDAM.2008.4743324
  177. C177    G. Meneghesso, M. Meneghini, A. Tazzoli, E. Zanoni, “ Reliability Issues in GaN HEMTs related to traps and gate leakage current”, INVITED Nanotechnology for Electronics, opto-Electronics and Electro-mechanical systems, NanoE3 2008, Margaret River, Western Australia 22-24 September, 2008
  178. C178    M. Meneghini, N. Trivellin, G. Meneghesso, L. Trevisanello, E. Zanoni, K. Orita, M. Yuri, D. Ueda, “Analysis of the role of current in the degradation of InGaN-based laser diodes”, International Workshop on Nitride semiconductors (IWN2008), p. 267, Montreux, Switzerland October 6-10, 2008.
  179. C179    G. Meneghesso, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, E. Zanoni, “Light emission in GaN HEMTs: a powerful characterization and reliability tool”, INVITED International Workshop on Nitride semiconductors (IWN2008), p. 298, Montreux, Switzerland October 6-10, 2008.
  180. C180    L. Trevisanello, N. Trivellin, M. Meneghini, E. Zanoni, G. Meneghesso, “Thermal-activated degradation mechanism on Phosphor-Converted Light Emitting Diode”, 17th European Heterostructure Technology Workshop, HETECH 2008, pp. 83-84, Venice, Italy, November 2-5, 2008. ISBN: 978-88-6129-296-3
  181. C181    N.Wrachien, A.Cester, A.Pinato, M.Meneghini, A.Tazzoli, G.Meneghesso, J.Kovac, J.Jakabovic, D.Donoval Charge Trapping in Organic Thin Film Transistors”, 17th European Heterostructure Technology Workshop, HETECH 2008, pp. 95-96, Venice, Italy, November 2-5, 2008. ISBN: 978-88-6129-296-3
  182. C182    A.Pinato, M.Meneghini, A Tazzoli, A.Cester, N.Wrachien, E.Zanoni, G.Meneghesso, B.D’Andrade, J.Esler, S.Xia, J.Brown,  “Indium Zinc Oxide as an alternative to Indium Tin Oxide in OLEDs Technology ” 17th European Heterostructure Technology Workshop, HETECH 2008, pp. 97-98, Venice, Italy, November 2-5, 2008. ISBN: 978-88-6129-296-3
  183. C183    F. Danesin, F.A. Marino, A.Tazzoli, F.Zanon, G.Meneghesso, E.Zanoni, A.Cetronio, C.Lanzieri, S.Lavanga, M.Peroni, P.Romanini,  “Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs”, 17th European Heterostructure Technology Workshop, HETECH 2008, pp. 51-52, Venice, Italy, November 2-5, 2008. ISBN: 978-88-6129-296-3
  184. C184    F.Zanon, N.Ronchi, F.Danesin, P.Bove, R.Langer, J.Thorpe, A.Stocco, G. Meneghesso, “An investigation of reliability on hybrid substrates GaN-HEMTs”, 17th European Heterostructure Technology Workshop, HETECH 2008, pp. 151-152, Venice, Italy, November 2-5, 2008. ISBN: 978-88-6129-296-3
  185. C185    A.Griffoni, E.Simoen, N.Collaert, C.Claeys, A.Paccagnella, and G. Meneghesso, “Multi-gate devices for the 32-nm node and beyond: advantages and issues”, 17th European Heterostructure Technology Workshop, HETECH 2008, pp. 15-16, Venice, Italy, November 2-5, 2008. ISBN: 978-88-6129-296-3
  186. C186    A.Chini, M.Esposto, M.Bonaiuti, G.Verzellesi, F.Zanon, E.Zanoni, G. Meneghesso, “Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement”, 17th European Heterostructure Technology Workshop, HETECH 2008, pp. 49-50, Venice, Italy, November 2-5, 2008. ISBN: 978-88-6129-296-3
  187. C187    A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, M. Scholz, D. Linten, N. Collaert, R. Rooyackers, C. Duvvury, H. Gossner, G. Meneghesso, and G. Groeseneken, “Impact of Strain on ESD Robustness of FinFET Devices”, Tech. Digest IEEE-IEDM 2008, IEEE International Electron Device Meeting, pp. 341-344, San Francisco, California, December 15-17, 2008, ISBN: 978-1-4244-2377-4, Doi: 10.1109/IEDM.2008.4796689
  188. C188    M. Meneghini, N. Trivellin, L.-R. Trevisanello, K. Orita, M. Yuri, D. Ueda, E. Zanoni, G. Meneghesso, “Role of non-radiative recombination in the degradation of InGaN-based laser diodes”, Tech. Digest IEEE-IEDM 2008, IEEE International Electron Device Meeting, pp. 473-476, San Francisco, California, December 15-17, 2008, Print ISBN: 978-1-4244-2377-4, doi: 10.1109/IEDM.2008.4796728
  189. C189    A. Tazzoli, G. Cellere, E. Autizi, V. Peretti, A. Paccagnella, and G. Meneghesso, “Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications”, 22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 pp. 634-637,  Sorrento – Italy, 25 – 29 January, 2009. ISBN: 978-1-4244-2977-6,  Doi: 10.1109/MEMSYS.2009.4805462
  190. C190    G. Meneghesso, “AlGaN/GaN HEMTs  degradation induced by reverse bias testing”, (INVITED) 45th WOCSEMMAD 09, The Workshop on Compound Semiconductor Materials and Devices, Fr. Myers, FL February 15-18, 2009
  191. C191    F. Zanon, G. Meneghesso, “Breakdown and High electric Fields in GaN-HEMTs on composite substrates”, (INVITED) 45th WOCSEMMAD 09, The Workshop on Compound Semiconductor Materials and Devices, Fr. Myers, FL February 15-18, 2009,
  192. C192    A. Pinato, M. Meneghini, A. Cester, N. Wrachien, A Tazzoli, E. Zanoni, G. Meneghesso, B. D’Andrade, J. Esler, S. Xia, J. Brown, “Improved Reliability of Organic Light Emitting Diodes with Indium-Zinc-Oxide Anode Contact”,  IEEE Int. Reliability Physics Symposium, IRPS 2009, Montreal Canada, PP. 105-108, April 26-30, 2009.  Print ISBN: 978-1-4244-2888-5, DOI: 10.1109/IRPS.2009.5173233
  193. C193    N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso J. Kovac, J. Jakabovic, D. Donoval , Threshold Voltage Instability in Organic TFT with SiO2 and SiO2/Parylene-Stack Dielectrics, IEEE Int. Reliability Physics Symposium, IRPS 2009, Montreal Canada, pp. 109-116, April 26-30, 2009. ISBN: 978-1-4244-2889-2
  194. C194    L. Trevisanello, M. Meneghini, N. Trivellin, E. Zanoni, and G. Meneghesso, “Thermally activated degradation and package instabilities of low power PC-LEDs”, IEEE Int. Reliability Physics Symposium, IRPS 2009, Montreal Canada, pp. 98-103, April 26-30, 2009. Print ISBN: 978-1-4244-2888-5, Doi: 10.1109/IRPS.2009.5173231
  195. C195    K. Orita, M. Meneghini, N. Trivellin, L. R. Trevisanello, S. Takigawa, M. Yuri, E. Zanoni, G. Meneghesso, T. Tanaka, “Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes”,  IEEE Int. Reliability Physics Symposium, IRPS 2009, Montreal Canada, pp. 736-740, April 26-30, 2009.  Print ISBN: 978-1-4244-2888-5 DOI:10.1109/IRPS.2009.5173340
  196. C196    G. Verzellesi, M. Faqir, A. Chini,  F. Fantini, G. Meneghesso, E. Zanoni, F. Danesin, F. Zanon, F. Rampazzo, F.A. Marino, A. Cavallini, A. Castaldini, “False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs”, IEEE Int. Reliability Physics Symposium, IRPS 2009, Montreal Canada, pp. 732-735, April 26-30, 2009. Print ISBN: 978-1-4244-2888-5, DOI: 10.1109/IRPS.2009.5173339
  197. C197    G. Meneghesso and A. Tazzoli, “Reliability of RF MEMS for High Frequency Applications”, INVITED TUTORIAL at IEEE Int. Reliability Physics Symposium, IRPS 2009, Montreal Canada, pp. 221.1-221.40, April 27, 2009
  198. C198    G. Meneghesso, M. Meneghini, A. Tazzoli and E. Zanoni, “Reliability Issues of GaN-Based High Electron Mobility Transistors”, INVITED TUTORIAL at IEEE Int. Reliability Physics Symposium, IRPS 2009, Montreal Canada, pp. 213.1-213.31, April 27, 2009
  199. C199    E. Zanoni, G. Meneghesso, F. Rampazzo, M. Meneghini, A. Tazzoli, F. Danesin, F. Zanon, N. Ronchi, A. Stocco, “Trap related instabilities and localized damages induced by reverse bias” ESA MoD Workshop on GaN Microwave Component Technologies, ULM, Germany, March 30, 31, 2009.
  200. C200    J.C. De Jaeger, V. Hoel, N. Defrance, C. Gaquiere, H. Gerard, X. Tang, M. Rousseau, H. Lareche, R. Langer, J. Thorpe, M.A. Poisson, C. Dua, S. Delage, A. Piotrowska, E. Kaminska, G. Meneghesso, B. Pecz, N. Henelius, “Microwave power capabilities of AlGaN/GaN HEMTs on composite Substrates”, Workshop on GaN Microwave Component Technologies, ULM, germany, March 30, 31, 2009.
  201. C201    A. Tazzoli, E. Zanoni, G. Meneghesso, “Three terminal Breakdown evaluation in GaN-HEMT”, Workshop on Advanced Semiconductor Materials and devices for Power Electronics applications” – WASMPE’09, Catania, May7-8, 2009
  202. C202    M. Meneghini, N. Trivellin, K. Orita, M. Yuri, T. Tanaka, D. Ueda, E. Zanoni, G. Meneghesso, “Reliability evaluation for Blu-Ray laser diodes”, International Symposium on Reliability of Optoelectronics For Space (ISROS 2009), pp. 115-118, Cagliari (Italy), May 11-15, 2009.
  203. C203    J. Kováč, J. Jakabovič, R. Srnánek, J. Kováč, D. Donoval, N. Wrachien, A. Cester, G. Meneghesso, “Growth morphologies and electrical properties of pentacene organic TFT with SiO2/parylene dielectric layer”, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2009, pp. Tue4 13-16, Málaga (Spain) May, 17-20, 2009.
  204. C204    N. Trivellin, M. Meneghini, G. Meneghesso, E. Zanoni, K. Orita, M. Yuri, T. Tanaka and D. Ueda, “Non-Radiative lifetime variation during the degradation of Blu-Ray InGaN Laser Diode”, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2009, pp. Mon2 43-46, Málaga (Spain) May, 17-20, 2009.
  205. C205    A. Stocco, N. Ronchi, F. Zanon, E. Zanoni and G. Meneghesso “Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs”, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2009, pp. Wed 4 45-47,  Málaga (Spain) May, 17-20, 2009.
  206. C206    N. Trivellin, M. Meneghini, E. Zanoni, G. Meneghesso, K. Orita, M. Yuri, T. Tanaka, D. Ueda, “Degradation of InGaN-based laser diodes due to increasednon-radiative recombination”, E-MRS 2009 Spring Meeting, Symposium j, CODE J02-6, Strasbourg (France), June 8 to 12, 2009.
  207. C207    A. Tazzoli, E. Autizi, M. Barbato, F. Solazzi, J. Iannacci, P. Farinelli, F. Giacomozzi, B. Margesin, R. Sorrentino, G. Meneghesso, “Impact of Continuous Actuation on the Reliability of Dielectric-less Ohmic RF-MEMS Switches”, MEMSWAVE 2009, 10th International Symposium on RF MEMS and RF Microsystems, pp. 129-132, Trento (Italy), July 6-8, 2009
  208. C208 M. Meneghini, L.-R. Trevisanello, F. de Zuani, N. Trivellin, G. Meneghesso, and E. Zanoni, “Extensive analysis of the degradation of phosphor-converted LEDs”, Proc. SPIE 7422, 74220H, 2009, Ninth International Conference on Solid State Lighting, San Diego, CA, August 2-6, 2009. DOI: 10.1117/12.826062,
  209. C209     G. Meneghesso, M. Meneghini, L. Rodighiero, N. Trivellin, G. Mura, M. Vanzi, and E. Zanoni, “Analysis of the degradation of AlGaN-based deep-ultraviolet LEDs”, TWHM2009, 8th Topical Workshop on Heterostructure Microelectronics, pp. 80-81, Nagano, Japan August 25-28, 2009.
  210. C210 E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, G. Meneghesso, “Reverse gate bias stress induced degradation of GaN HEMT”,  ISCS 2009, 36th International Symposium on Compound Semiconductors, pp: 219-220, Santa Barbara, CA, August 30–September 2, 2009
  211. C211 M. Meneghini, N. Trivellin, M. Pavesi, M. Manfredi, U. Zehnder, B. Hahn, G. Meneghesso and E. Zanoni “Analysis of the physical mechanisms responsible for leakage current and reverse-bias luminescence in green LEDs ”, ISCS 2009, 36th International Symposium on Compound Semiconductors, pp. 395-396, August 30–September 2, 2009
  212. C212    A. Tazzoli, A. Gasperin, A. Paccagnella, G. Meneghesso “EOS/ESD Sensitivity of Phase-Change-Memories”, EOS/ESD 2009, 31th Electrical Overstress / Electrostatic Discharge Symposium, pp. 3B4.1-3B4.8, Anaheim, California, USA, August 30 – September 4, 2009. ISBN: 978-1-58537-176-1
  213. C213    A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs”, Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on 14-18 Sept. 2009, ISBN: 978-1-4577-0492-5, Doi: 10.1109/RADECS.2009.5994640
  214. C214    A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, D. Linten, M. Scholz, N. Collaert, L. Witters, G. Meneghesso, and G. Groeseneken, “Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness”; EOS/ESD 2009, 31th Electrical Overstress / Electrostatic Discharge Symposium, pp. 2A1.1 – 2A1.10, Anaheim, California, USA, August 30 – September 4, 2009. ISBN: 978-1-58537-176-1
  215. C215     A. Tazzoli, E. Autizi, M. Barbato, G. Meneghesso, F. Solazzi, P. Farinelli, F. Giacomozzi, J. Iannacci, B. Margesin, R. Sorrentino, “Evolution of Electrical Parameters of Dielectric-less Ohmic RF-MEMS Switches during Continuous Actuation Stress” Proc. of the 39th European Solid-State Device Research Conference, ESSDERC 2009, pp. 343-346, Athens, Greece, September 14-18, 2009. ISBN: 978-1-4244-4351-2, DOI: 10.1109/ESSDERC.2009.5331307
  216. C216     N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval “Organic TFT with SiO2-Parylene Gate Dielectric Stack  and Optimized Pentacene Growth Temperature”, Proc. of the 39th European Solid-State Device Research Conference, ESSDERC 2009, pp. 201-204, Athens, Greece, September 14-18, 2009. ISBN: 978-1-4244-4351-2, DOI: 10.1109/ESSDERC.2009.5331324
  217. C217    E. Zanoni, G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, F. Zanon, “Long-term stability of Gallium Nitride High Electron Mobility Transistors:  a reliability physics approach”, Invited Proceedings of the 4th European Microwave Integrated Circuits Conference, EuMIC 2009, pp. 212-217, Roma (Italy), 28-29 September, 2009, ISBN: 978-1-4244-4749-7.
  218. C218    A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni “RF Degradation of GaN HEMTs and its Correlation with  DC Stress and I-DLTS Measurements”, Proceedings of the 4th European Microwave Integrated Circuits Conference EuMIC 2009, pp. 132-135, Roma 28-29 September, 2009, ISBN: 978-1-4244-4749-7.
  219. C219    G. Meneghesso, A. Tazzoli,  M. Meneghini, E. Zanoni, “Parasitic Effects in GaN HEMTs and  Related Characterization Methods”, Invited  Workshop “Advances in Gallium Nitride High Electron Mobility Transistors: Technology and Reliability”, by U. Mishra (UCSB) and E. Zanoni (Univ. of Padova); within the European Microwave Week,  EuMW 2009, Roma 28 September, 2 October, 2009
  220. C220 G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini “GaN Hemt Degradation induced by Reverse Gate Bias Stress”, ICNS-8, The 8th International Conference on Nitride Semiconductors, pp. 945-946, Jeju Island (ICC Jeju), Korea, October 18 -23, 2009.
  221. C221 M. Meneghini, N. Trivellin, U. Zehnder, B. Hahn, G. Meneghesso and E. Zanoni, “Degradation of InGaN-Based Leds Induced by Reverse Bias Stress”,  ICNS-8, The 8th International Conference on Nitride Semiconductors , pp. 1333-1334,  Jeju Island (ICC Jeju), Korea, October 18 -23, 2009.
  222. C222    A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, D. Linten, M. Scholz, N. Collaert, L. Witters, G. Meneghesso, and G. Groeseneken, “ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures”, Reliability Center for Electronic Components of Japan Symposium – RCJ Symposium, Tokyo, Japan, pp. 41-51, October 22-23, 2009.
  223. C223    M. Scholz, D. Linten, S. Thijs, A. Griffoni, M. Sawada, T. Nakaei, T. Hasebe, D. Lafonteese, V. Vashchenko, G. Vandersteen, P. Hopper, G. Meneghesso, and G. Groeseneken, “On-Wafer Human Metal Model Measurements for System-Level ESD Analysis on Component Level”, Reliability Center for Electronic Components of Japan Symposium – RCJ Symposium, Tokyo, Japan, pp. 53-62, October 22-23, 2009. ISBN: 978-1-58537-176-1
  224. C224 A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni  “Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs” IEDM09, IEEE International Electron Device Meeting, pp. 7.7.1-7.7.4, Baltimore MD, December 7-9, 2009. ISBN: 978-1-4244-5639-0, DOI: 10.1109/IEDM.2009.5424394
  225. C225 A. Griffoni, S.Thijs, D. Linten, M. Scholz, G. Groeseneken, and G. Meneghesso, “An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices”, 18th European Heterostructure Technology Workshop – HETECH 2009, pp. 25-26, Günzburg / Ulm, Germany, November 2-4, 2009
  226. C226 V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni. “Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs”, 18th European Heterostructure Technology Workshop – HETECH 2009, pp. 115-116, Günzburg / Ulm, Germany, November 2-4, 2009
  227. C227 A. Tazzoli, G. Monaco, P. Nicolosi, E. Zanoni, G. Meneghesso, “Breakdown Investigation on AlGaN/GaN-HEMT Devices”, 18th European Heterostructure Technology Workshop – HETECH 2009, pp. 43-44 Günzburg / Ulm, Germany, November 2-4, 2009
  228. C228 N. Trivellin, M. Meneghini, M. Dal Lago, G. Meneghesso, L. Rodighiero, G. Mura, M. Vanzi, E. Zanoni, “Effects of Electro-Thermal stress on AlGaN deep-ultraviolet LEDs”, 18th European Heterostructure Technology Workshop – HETECH 2009, pp. 51-52 Günzburg / Ulm, Germany, November 2-4, 2009
  229. C229 A. Tazzoli, M. Barbato, S. Gerardin, G. Monaco, P. Nicolosi, A. Paccagnella, G. Meneghesso, “Evidence of protons induced contact degradation on ohmic RF-MEMS switches”, 18th European Heterostructure Technology Workshop – HETECH 2009, pp. 71-72 Günzburg / Ulm, Germany, November 2-4, 2009
  230. C230  A. Stocco, N. Ronchi, F. Zanon, E. Zanoni, G.Meneghesso, A. Chini, M. Peroni, “Trap analysis on GaN HEMT after DC accelerated tests”, 18th European Heterostructure Technology Workshop – HETECH 2009, pp. 119-120, Günzburg / Ulm, Germany, November 2-4, 2009.
  231. C231    M. Meneghini, A. Tazzoli, N. Trivellin, E. Ranzato, M. Dal Lago, B. Hahn, U. Zehnder, R. Butendeich, G. Meneghesso, E. Zanoni, “A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs”, XIV conference on “Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting”, SPIE Photonics West, 23-28 January 2010, San Francisco, CA, USA, Proc. SPIE Vol. 7617, 76170M, 2010. ISBN: 9780819480132, DOI: 10.1117/12.841826
  232. C232    M. Meneghini, G. Meneghesso and E. Zanoni, “Reliability of GaN-based optoelectronic devices: state of the art and perspectives”,  INVITED United Kingdom Nitride Semiconductors (UKNS), Winter Conference, Cork, in the Republic of Ireland, 12-13th January 2010
  233. C233    M. Meneghini, G. Meneghesso, E. Zanoni, “Recent advancements in the reliability of GaN-based LEDs” INVITED, The 4th International Conference on LED and Solid State Lighting, LED 2010 Korea, February 2-5, 2010.
  234. C234    G. Meneghesso, A. Stocco, N. Ronchi, M. Meneghini, A. Tazzoli, and E. Zanoni, “New reliability understanding on GaN-HEMTs”, INVITED The Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010, Newport Beach, California  February 14-17, 2010
  235. C235    G. Meneghesso, M. Meneghini, A. Tazzoli, and E. Zanoni, “Electrostatic discharge sensitivity in InGaN-based Light Emitting Diodes” INVITED The Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010, Newport Beach, California  February 14-17, 2010
  236. C236    G. Meneghesso, “Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach”. Invited 2010 International RCIQE/CREST Joint Workshop, Hokkaido University, Sapporo, Japan, March 1-2, 2010.
  237. C237    C. Claeys, S. Put, A. Griffoni, A. Cester, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, “Impact of radiation on the operation and reliability of deep submicron CMOS”, Invited China Semiconductor Technology International Conference CSTIC 2010, Symposium I: Design and Device Engineering, March 18-19, 2010, Shanghai, China
  238. C238    M. Meneghini, G. Mura, M. dal Lago, L. Rodighiero, M. Vanzi, G. Meneghesso, E. Zanoni, “Degradation mechanisms of white LEDs for lighting applications”, ISROS 2010, 2nd International Symposium on Reliability of Optoelectronics For Space, Cagliari 28-30 April 2010.
  239. C239    N. Trivellin, M. Meneghini, E. Zanoni, K. Orita, M. Yuri, T. Tanaka, D. Ueda, G. Meneghesso, “A Review on the Reliability of GaN-based Laser Diodes” Invited, IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California, pp.1-6, ISBN: 978-1-4244-5431-0, DOI: 10.1109/IRPS.2010.5488866
  240. C240    M. Meneghini, A. Tazzoli, E. Ranzato, G. Meneghesso, and E. Zanoni, R. Butendeich, U. Zehnder, B. Hahn, “Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events”, IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California, pp.522-527,  ISBN: 978-1-4244-5431-0, DOI: 10.1109/IRPS.2010.5488776
  241. C241    N. Wrachien, A. Cester, N. Bellaio, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, K. Myny, S. Smout, J. Genoe, “Light, Bias, And Temperature Effects On Organic TFTs”, t IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California, pp.334-341, ISBN: 978-1-4244-5431-0, DOI: 10.1109/IRPS.2010.5488806
  242. C242    A. Tazzoli, M. Barbato, V. Giliberto, G. Monaco, S. Gerardin, P. Nicolosi, A. Paccagnella, G. Meneghesso, “Accelerated testing of RF-MEMS contact degradation through radiation sources”, IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California, pp.246-251, ISBN: 978-1-4244-5431-0, DOI: 10.1109/IRPS.2010.5488823
  243. C243    N. Wrachien, A. Cester, E. Zanoni, G. Meneghesso, Y.Q. Wu and P.D. Ye, “Degradation of III-V inversion-type enhancement-mode MOSFETs”, IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California, pp.536-542, ISBN: 978-1-4244-5431-0, DOI: 10.1109/IRPS.2010.5488775
  244. C244    G. Meneghesso, M. Damman, “Parasitic and Reliability Issues of GaN-Based High Electron Mobility Transistors” Invited TUTORIAL IRPS2010, International Reliability Physics Symposium, May 2-6, 2010 Anaheim, California,
  245. C245    A. Tazzoli, M. Cordoni, P. Colombo, G. Meneghesso, “Influence of Geometrical Parameters on Time-to-Latch-Up of SCR-Based ESD Protection Structures” IEW2010, International ESD Workshop 2010,  Evangelische Akademie, Tutzing, Germany, May 10-13, 2010.
  246. C246    M. Meneghini, A. Tazzoli, G. Meneghesso, E. Zanoni, “Reverse-bias and ESD instabilities of InGaN-based LEDs”, Invited WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits, pp. 123-126, May 16-19, 2010 Darmstadt/Seeheim, Germany. ISBN: 978-3-00-030838-3
  247. C247    G. Meneghesso, D. Theron, “46th Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2010) Conference Report” Invited WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits, pp. 197-198, May 16-19, 2010 Darmstadt/Seeheim, Germany. ISBN: 978-3-00-030838-3
  248. C248    G. Meneghesso, A. Stocco, N. Ronchi, E. Zanoni, R. Cuerdo, F. Calle, E. Munoz, M.J. Uren, “Kink and Cathodoluminescence in AlGaN/GaN HEMTs ” WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits, pp. 37-38, May 16-19, 2010 Darmstadt/Seeheim, Germany. ISBN: 978-3-00-030838-3
  249. C249    A. Stocco, N. Ronchi, A. Chini, P.A. Nilsson, G. Meneghesso, E. Zanoni, “High Robustness GaN HEMT Subject to Reverse Bias Stress”, WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits, pp. 205-206, May 16-19, 2010 Darmstadt/Seeheim, Germany. ISBN: 978-3-00-030838-3
  250. C250    F. Casini, F. Di Maggio, M. Dispenza, P. Farinelli, B. Margesin, E. Carpentieri, U. D’Elia, R. Vitiello, I. Pomona, A. Tazzoli, G. Meneghesso, M. Tului, R. Sorrentino, “Design of mm-wave 5-bit phase shifters for Phased Array Antennas”, ESA Microwave Technology and Techniques Workshop 2010, May 10-12, 2010.
  251. C251    A. Tazzoli, M. Barbato, F. Mattiuzzo, V. Ritrovato, G. Meneghesso, “Electro-Mechanical Characterization of the Dynamic Behavior of Ohmic RF MEMS Switches”, MEMSWAVE 2010 11th International Symposium on RF MEMS and RF Microsystems, Otranto, ITALY,  June 28-29-30 July 1, 2010.
  252. C252    F. Casini, F. Di Maggio, M. Dispenza, P. Farinelli, B. Margesin, E. Carpentieri, U. D’Elia, R. Vitiello, I. Pomona, A. Tazzoli, G. Meneghesso, M. Tului, R. Sorrentino, “Design of mm-wave 5-bit phase shifters for Satellite On The Move terminals”, MEMSWAVE 2010 11th International Symposium on RF MEMS and RF Microsystems, Otranto, ITALY  June 28-29-30 July 1, 2010.
  253. C253    A. Tazzoli, M. Barbato, G. Meneghesso, A. Repchankova, B. Margesin, J. Iannacci, “Experimental Investigation of an Embedded Heating Mechanism to Improve RF-MEMS Switches Reliability”, MEMS IN ITALY 2010,
  254. C254   E. Zanoni, A. Chini, A. Stocco, I. Rossetto, M. Meneghini, F. Rampazzo, N. Ronchi, A. Tazzoli, G. Verzellesi, G. Meneghesso,  “Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques”, 5th Space Agency – MOD Round Table Workshop on GaN Component Technologies,  Noordwijk (The Netherlands), 2 & 3 September 2010
  255. C255    M. Meneghini, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, G. Meneghesso, E. Zanoni, “State of the art in the reliability of GaN-based laser diodes” Invited EMRS 2010 Fall Meeting of European Material Research Society, Warsaw 13th and 17th September 2010.
  256. C256     G. Meneghesso, N. Ronchi, A. Stocco, E. Zanoni, E. Piner, S. Tirelli, A.R. Alt, and C. R. Bolognesi, “Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT”, International Workshop on Nitride Semiconductors (IWN2010), Tampa (Florida), September 19-24, 2010.
  257. C257     M. Meneghini, M. Scamperle, G. Meneghesso, E. Zanoni, H. Ishida, T. Ueda, T. Tanaka, and D. Ueda, “Extensive investigation of the electrical and optical characteristics of Gate Injection Transistors based on GaN”, International Workshop on Nitride Semiconductors (IWN2010), Tampa (Florida), September 19-24, 2010.
  258. C258     M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, K. Orita, S. Takigawa, T. Tanaka, and D. Ueda “Combined electro-optical analysis of the degradation of InGaN-based laser diodes”, International Workshop on Nitride Semiconductors (IWN2010), Tampa (Florida), September 19-24, 2010.
  259. C259     N. Trivellin, M. Meneghini, A. Zanotto, G. Meneghesso and E. Zanoni, “Ageing mechanisms of 420nm GaN HBLED”, International Workshop on Nitride Semiconductors (IWN2010), Tampa (Florida), September 19-24, 2010.
  260. C260    A. Tazzoli, M. Barbato, V. Ritrovato, G. Meneghesso, “A Comprehensive Study of MEMS Behavior under EOS/ESD Events: Breakdown, Dielectric Charging, and Realistic Cures”, 32th Electrical Overstress / Electrostatic Discharge Symposium,  EOS/ESD 2010, Sparks (Reno), NV, October 3-8, 2010. ISBN: 978-1-58537-182-2
  261. C261    F. Solazzi, A. Tazzoli, P. Farinelli, A. Faes, V. Mulloni, G. Meneghesso, B. Margesin, “Active Recovering Mechanism for High Performance RF MEMS Redundancy Switches”, EuMIC 2010, European Microwave Week 2010, pp.93-96, CNIT, Paris, France, 26 September – 1 October 2010.     ISBN: 978-1-4244-7232-1
  262. C262    N. Ronchi, M. Meneghini, A. Stocco, G. Meneghesso, E. Zanoni, S. Tirelli and C. R. Bolognesi, “A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT”, 19th European Heterostructure Technology Workshop – HETECH 2010, Fodele, Crete, October 18-20, 2010.
  263. C263    V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini and A. Chini, “Study of GaN HEMTs degradation by numerical simulations of scattering parameters”, 19th European Heterostructure Technology Workshop – HETECH 2010, Fodele, Crete, October 18-20, 2010.
  264. C264    N. Trivellin, M. Meneghini, C. de Santi, S. Vaccari, E. Zanoni and G. Meneghesso, “Degradation analysis of Violet high power LEDs”, 19th European Heterostructure Technology Workshop – HETECH 2010, Fodele, Crete, October 18-20, 2010.
  265. C265    N. Wrachien, A. Cester,  G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval, “Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics”, 8th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM2010), pp. 171-174, Smolenice, Slovacchia, 22-25 October, 2010. doi: 10.1109/ASDAM.2010.5666327, ISBN: 978-1-4244-8574-1
  266. C266  D. Marcon, T. Kauerauf, F. Medjdoub, J. Das, M. Van Hove, P. Srivastava, K. Cheng, M. Leys, R. Mertens, S. Decoutere, G. Meneghesso, E. Zanoni, and G. Borghs, “A Comprehensive Reliability Investigation of the Voltage-, Temperature- and Device Geometry-Dependence of the Gate Degradation on state-of-the-art GaN-on-Si HEMTs”; Tech. Digest 2010 IEEE International Electron Devices Meeting (IEDM2010), San Francisco, CA December 6-8, 2010. doi: 10.1109/IEDM.2010.5703398 2011
  267. C267    E. Zanoni, G. Meneghesso, M. Meneghini, “An overview on the physical mechanisms determining the degradation of GaN-based LEDs and lasers ” Invited SPIE Photonics West Conference on Gallium Nitride Materials and Devices San Francisco, January 22-27, 2011
  268. C268    M. Meneghini; N. Trivellin; G. Meneghesso; K. Orita; S. Takigawa; T. Tanaka; D. Ueda; E. Zanoni, “Recent results on the physical origin of the degradation of GaN-based LEDs and lasers”,  SPIE Proceedings Vol. 7939, Gallium Nitride Materials and Devices VI, Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editors, 79390W, Date: 18 February 2011 – ISBN: 9780819484765, 10.1117/12.872986
  269. C268    G. Meneghesso,  A. Stocco, N. Ronchi, M. Meneghini, and E. Zanoni, “Latest reliability results in GaN HEMTs devices”, Invited The Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD2011, February 20-23, 2011, Savannah, Georgia.
  270. C270    G. Meneghesso, “Reliability of GaN Based HEMTs Devices”, Year In Review,  2011 International Reliability Physics Symposium, IRPS2011,  Monterey, CA, USA , April 10-14, 2011.
  271. C271    M. Meneghini, G. Meneghesso, and E. Zanoni, “Reliability issues in optoelectronics devices” Tutorials at  2011 International Reliability Physics Symposium, IRPS2011,  Monterey, CA, USA , April 10-14, 2011, DOI: 10.1109/IRPS.2011.5784437
  272. C272    N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic, M. Sokolsky, D. Donoval, J.Cirak, “Low-Energy UV Effects on Organic Thin-Film-Transistors”,  2011 International Reliability Physics Symposium, IRPS2011,  Monterey, CA, USA , April 10-14, 2011. ISBN: 978-1-4244-9111-7, DOI: 10.1109/IRPS.2011.5784462
  273. C273    D. Bari, N. Wrachien, A. Cester, G. Meneghesso, R. Tagliaferro, S. Penna, T. M. Brown, A. Reale, A. Di Carlo, “Optical Stress and Reliability Study of Rutheniumbased Dye-Sensitized Solar Cells (DSSC)”,  2011 International Reliability Physics Symposium, IRPS2011,  Monterey, CA, USA , April 10-14, 2011. ISBN: 978-1-4244-9111-7, DOI: 10.1109/IRPS.2011.5784537
  274. C274    F. Solazzi, J. Iannacci, A. Faes, F. Giacomozzi, B. Margesin, A. Tazzoli, and G. Meneghesso “Modeling and characterization of a circular-shaped energy scavenger in MEMS surface micromachining technology”, SPIE Microtechnologies, Conference 8066: Smart Sensors, Actuators and MEMS, Proceedings of SPIE Vol. 8066,  Prague Congress Centre Prague, Czech Republic 18-20 April 2011. (IUNET, ENIAC-END). doi.: 10.1117/12.887559 – ISBN: 9780819486554
  275. C275     A. Griffoni, S. Thijs, S.-H. Chen, A. Tazzoli, M. Cordoni, P. Colombo, A. Paccagnella, D. Linten, G. Meneghesso, and G. Groeseneken, “An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures”, IEW2011, 2011 International Electrostatic Discharge Workshop, Lake Tahoe, CA, May 16-19, 2011.
  276. C276     M. Meneghini, N. Ronchi, A. Stocco, F. Rampazzo, G. Meneghesso, U. K. Mishra, Y. Pei, and E. Zanoni, “Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs”, Proc. Of the 38th International Symposium on Compound Semiconductors – ISCS 2011, pp. 244-245, May 22-26, 2011, Berlin, Germany
  277. C277 D. Saguatti, G. Verzellesi, L. Bindinelli, M. Meneghini, G. Meneghesso, E. Zanoni, R. Butendheich, B. Hahn, “Analysis of efficiency-droop mechanisms in single-quantum well InGaN/GaN light-emitting diodes”, Proc. Of the 38th International Symposium on Compound Semiconductors – ISCS 2011, pp. 228-229, May 22-26, 2011, Berlin, Germany
  278. C278    G. Meneghesso, P. Specht, S.L. Delage,  “Conference Report: 47th Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2011)”, Invited – 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, pp. 111-112, 29 Maggio – 1 Giugno,  Catania – Italy, 2011. ISBN:978-88-8080-123-8
  279. C279      M. Dal Lago, M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni , “The role of operating conditions in the chip-level degradation of white LEDs”, 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, pp. 185-186, 29 Maggio – 1 Giugno,  Catania – Italy, 2011. ISBN:978-88-8080-123-8
  280. C280     C. De Santi, M. Meneghini, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Electro-Optical analysis of the degradation of advanced InGaN-laser structures”,  35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, pp. 195-196, 29 Maggio – 1 Giugno,  Catania – Italy, 2011. ISBN:978-88-8080-123-8
  281. C281     A. Stocco, N. Ronchi, G. Meneghesso, E. Zanoni, F. Roccaforte, V. Raineri, “Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC”, 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, pp. 153-154, 29 Maggio – 1 Giugno,  Catania – Italy, 2011. ISBN:978-88-8080-123-8
  282. C282    M. Barbato, V. Giliberto, A. Massenz, F. Di Maggio, M. Dispenza, P. Farinelli, B. Margesin, E. Carpentieri, U.D’Elia, I. Pomona, M. Tului, F. Casini, R. Sorrentino, E. Zanoni, G. Meneghesso, “Charge trap investigation methodology on RF-MEMS switches”, MEMSWAVE 2011, 12th International Symposium on RF MEMS and RF Microsystems,  Athens, Greece June 27-29, 2011. (IUNET, ENIAC-END)
  283. C283      F. Casini, F. Di Maggio, M. Dispenza, P. Farinelli, B. Margesin, E. Carpentieri, U. D’Elia, R. Vitiello, I. Pomona, A. Massenz, G. Meneghesso, M. Tului, E. Chiuppesi, G. Resta, F. Solazzi, S. Colpo, R. Sorrentino , “RF-MEMS based microwave 5-bit Phase Shifters for Phased Array Antenna Systems”; MEMSWAVE 2011, 12th International Symposium on RF MEMS and RF Microsystems,  Athens, Greece June 27-29, 2011.
  284. C284    G. Meneghesso, M. Meneghini, E. Zanoni, “Reliability issues in GaN-Based optoelectronic devices: from material to package”,  Invited Workshop: Reliability and Variability of Emerging Devices for Future Technologies and ULSI Circuits and Systems, International Conference on Materials for Advanced Technologies, ICMAT2011, Singapore,  June 27 – July 1, 2011.
  285. C285    M. Meneghini, C. de Santi, T. Ueda, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Time and field-dependent trapping in AlGaN/GaN E-mode transistors”,  9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  286. C286    M. Meneghini, C. De Santi, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Identification of the deep level involved in InGaN-laser degradation by means of Deep-Level Transient Spectroscopy”,  9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  287. C287    N. Trivellin, M. Meneghini, G. Meneghesso and E. Zanoni, “Study of the degradation of Deep-UV LEDs by, “Electroluminescence and Photocurrent Spectroscopy Measurements” , 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  288. C288    D. Saguatti, G. Verzellesi, M. Meneghini, G. Meneghesso, E. Zanoni, R. Butendeich, B. Hahn, “Analysis of efficiency-droop mechanisms in GaN-based light-emitting diodes, related technological solutions and discriminating experiments”,  9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  289. C289     E. Zanoni, M. Meneghini, G. Meneghesso, “Off-state and on-state drain and gate current degradation of AlGaN/GaN High Electron Mobility Transistors on SiC substrate”, Invited,  9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  290. C290    N. Trivellin, E. Feltin, S. Nicolay, C. Ballif, G. Cosendey, G. Meneghesso, E. Zanoni and N. Grandjean, “Improved InGaN LED extraction efficiency by means of rough ZnO transparent contacts”, 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  291. C291    M. Goano, S. Chiaria, M. Calciati, F. Bertazzi, G. Ghione, M Meneghini, M. Ferretti, G. Meneghesso, E. Zanoni, E. Bellotti, D. Zhu, C. Humphreys, “Effects of Dislocation Density on Injection and Temperature Sensitivity of InGaN LED Emission Spectra: a Combined Experimental and Simulation Approach”, 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK July 10th -15th, 2011.
  292. C292    N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic and D. Donoval, “Near-Uv Irradiation Effects On Pentacene Based Organic Thin Film Transistors”, 2011 IEEE Nuclear and Space Radiation Effects Conference, NSREC2011, Las Vegas, Nevada, July 25-29, 2011.
  293. C293    G. Meneghesso, E, Zanoni, M. Meneghini,  “Reliability of GaN-based HEMTs: electrical, optical and physical investigations” Invited, 9th Topical Workshop on Heterostructure Microelectronics, TWHM2011, Gifu, Japan, August 28 – 31, 2011.
  294. C294    A. Tazzoli, J. Iannacci, G. Meneghesso,  “A Positive Exploitation of ESD Events: Micro-welding Induction on Ohmic MEMS Contacts”,  EOSESD2011, 33rd Annual EOS/ESD Symposium, Anaheim, CA, September 11-16, 2011. (IUNET, ENIAC-END) E-ISBN :  978-1-58537-193-8
  295. C295     E. Zanoni, G. Meneghesso, M. Meneghini, A. Stocco, F. Rampazzo, R. Silvestri, I. Rossetto, and N. Ronchi, Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors” Invited,  Symposium: E10 – GaN and SiC Power Technologies, 220th ECS Meeting & Electrochemical Energy Summit in Boston, Massachusetts, October 9-14, 2011. The Electrochemical Society, Editors, K. Shenai, M. Dudley, R. Garg, A. Khan, R.Ma, ECS Transactions, vol. 41, No. 8, 2011, ISBN: 978-1-56677-908-1
  296. C296     F. Rampazzo, A. Stocco, R. Silvestri, M. Meneghini, N. Ronchi, D Bisi, F. Soci, A. Chini, G. Meneghesso, and E. Zanoni, “Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors”, 20th European Heterostructure Technology meeting (HeTech 2011), 7-9 Nov 2011, Lille – France.
  297. C297     A. Zanandrea, F. Rampazzo, A. Stocco, E. Zanoni, D Bisi, F. Soci, A. Chini, P. Ivo, J. Wuerfl, and G. Meneghesso, “DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices”, 20th European Heterostructure Technology meeting (HeTech 2011), 7-9 Nov 2011, Lille – France.
  298. C298    S. Vaccari, M. Meneghini1, D. Zhu, C. Humphreys, G. Meneghesso, E. Zanoni,  “Extensive electroluminescence analysis of InGaN-based Light-Emitting Diodes: temperature and current-dependent effects”, 20th European Heterostructure Technology meeting (HeTech 2011), 7-9 Nov 2011, Lille – France.
  299. C299    C. De Santi, M. Meneghini, G. Meneghesso, U. K. Mishra, S. Lal, and E. Zanoni “Gate material – dependent degradation of reverse biased GaN HEMTs”, 20th European Heterostructure Technology meeting (HeTech 2011), 7-9 Nov 2011, Lille – France
  300. C300    D. Saguatti, G. Verzellesi, M. Meneghini, G. Meneghesso, E. Zanoni,    “Numerical Simulation of Efficiency-Droop Mechanisms in InGaN/GaN Blue Light-Emitting Diodes”, 20th European Heterostructure Technology meeting (HeTech 2011), 7-9 Nov 2011, Lille – France.
  301. C301      G. Meneghesso, M. Barbato, V. Giliberto, A. Massenz, E. Zanoni, B. Margesin, S. Colpo, “Reliability of RF-MEMS switches for efficient Satellite telecommunications”, NanotechItaly 2011 – International Conference Venezia-Mestre, pp.379-380, 23-25 Novembre 2011,  (IUNET, ENIAC-END).
  302. C302      I. Pomona, F. Casini, F. Di Maggio, M. Dispenza, P. Farinelli, B. Margesin, E. Carpentieri, U. D’Elia, M. Barbato, G. Meneghesso, M. Tului, E. Chiuppesi, R. Sorrentino,  “RF-MEMS Phase Shifters for Phased Array Antennas”,  NanotechItaly 2011 – International Conference Venezia-Mestre, pp.117-118,  23-25 Novembre 2011.
  303. C303     M. Meneghini, A. Stocco, M. Bertin, N. Ronchi, A. Chini, D. Marcon, G. Meneghesso, and E. Zanoni, “Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model”, IEEE International Electron Device Meeting (IEDM 2011), Washington DC, Dec. 5-7, 2011. DOI: 10.1109/IEDM.2011.6131586, ISBN: 978-1-4577-0506-9, 2012
  304. C304    M. Meneghini, C. de Santi, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS” , Proc. SPIE 8278, 82780W,  SPIE Photonics West 2012 ,  San Francisco, California, USA 21–26 January 2012 . DOI: 10.1117/12.906551 – ISBN: 9780819489050
  305. C305    N. Trivellin, M. Meneghini,  G. Meneghesso, and E. Zanoni, “Innovative methodology for testing the reliability of LED based systems”, Proc. SPIE 8262, 826215 (2012),  SPIE Photonics West 2012,  San Francisco, California, USA 21–26 January 2012. DOI: 10.1117/12.909349, ISBN: 9780819489210
  306. C306    G. Meneghesso, E. Zanoni, M. Meneghini, A. Stocco, R. Silvestri, M. Bertin, F. Rampazzo, “Time dependent Degradation of AlGaN/GaN HEMTs”, 48th Annual Workshop on Compound Semiconductor Materials and Devices — WOCSEMMAD 2012, Napa, CA,   February 19-22, 2012.
  307. C307     G. Meneghesso,  WOCSEMMAD Report of Wocsdice Invited, 48th Annual Workshop on Compound Semiconductor Materials and Devices — WOCSEMMAD 2012, Napa, CA,   February 19-22, 2012.
  308. C308    E. Zanoni, G. Meneghesso, M. Meneghini, A. Stocco, “GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms”. Invited, 2012 MRS Spring Meeting & Exhibit – SYMPOSIUM: G: Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II,  San Francisco, CA, April 9 – April 13, 2012
  309. C309    M. Meneghini, A. Stocco, R. Silvestri N. Ronchi, G. Meneghesso and E. Zanoni, “Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors” IRPS2012, International Reliability Physics Symposium,  2012 Anaheim, CA, USA, April 15-19. E-ISBN :  978-1-4577-1679-9, Print ISBN: 978-1-4577-1678-2, Doi: 10.1109/IRPS.2012.6241779
  310. C310    A. Chini, V. Di Lecce, F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso, E. Zanoni, “Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs” IRPS2012, International Reliability Physics Symposium,  Anaheim, CA, USA, April 15-19, 2012. E-ISBN: 978-1-4577-1679-9, Print ISBN: 978-1-4577-1678-2, Doi:  10.1109/IRPS.2012.6241881
  311. C311    N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval, “Organic Thin Film Transistor Degradation Under Sunlight Exposure”, IRPS2012, International Reliability Physics Symposium,  Anaheim, CA, USA, April 15-19, 2012.           E-ISBN :  978-1-4577-1679-9, Print ISBN: 978-1-4577-1678-2, Doi:  10.1109/IRPS.2012.6241936
  312. C312    A. Cester, D. Bari, N. Wrachien, G. Meneghesso, “Study of the effect of stress-induced trap level on OLED characteristics by numerical model”, IRPS2012, International Reliability Physics Symposium,  Anaheim, CA, USA, April 15-19, 2012. E-ISBN :  978-1-4577-1679-9, Print ISBN: 978-1-4577-1678-2, Doi:  10.1109/IRPS.2012.6241882
  313. C313     N. Wrachien, A. Cester, D. Bari, E. Zanoni, G. Meneghesso, Y. Q. Wu and P. D. Ye  “Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs”, IRPS2012, International Reliability Physics Symposium,  Anaheim, CA, USA, April 15-19, 2012.  E-ISBN :  978-1-4577-1679-9, Print ISBN: 978-1-4577-1678-2, Doi:  10.1109/IRPS.2012.6241818
  314. C314    G. Meneghesso, E. Zanoni  “Reliability of Gallium Nitride High Electron Mobility Transistors” Invited TUTORIAL IRPS2012, International Reliability Physics Symposium,  Anaheim, CA, USA, April 15-19, 2012.
  315. C315    M. Meneghini, A. Stocco, M. Bertin, D. Marcon, G. Meneghesso, E. Zanoni “Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis”, The International Conference of Compound Semiconductor Manufacturing Technology  CS-MANTECH, Boston, Massachusetts, USA, April 23rd – 26th, 2012.
  316. C316    E. Zanoni, G. Meneghesso, “Reliability of Gallium Nitride High Electron Mobility Transistors: from microwave to power electronics” Invited TUTORIAL, 24th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD’12), Bruges, Belgium, June 4-7, 2012.
  317. C317    H. Goverde, T. Beard, J. Horzel, J. John, A. Morato, J. Poortmans, B. Vermang, G. Meneghesso, “Al2O3 Surface Passivation Characterized on Hydrophobic and Hydrophilic  Si by Combination of QSSPC, CV and FTIR”, SiliconPV 2012, the 2nd  International Conference on Silicon Photovoltaics, Leuven Belgium, April 3-5, 2012.
  318. C318    D. Bari, A. Cester, N. Wrachien, G. Meneghesso,  R. Tagliaferro, T. M. Brown, A. Reale, A. Di Carlo, “Study of the Effects of UV-Exposure on Dye-Sensitized Solar Cells”,  IEEE Nuclear and Space Radiation Effects Conference, NSREC2012, Miami, Florida, July 16-20, 2012
  319. C319     N.Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic and D. Donoval, “Effect on encapsulation on OTFT robustness against UV-light and alpha irradiation”  IEEE Nuclear and Space Radiation Effects Conference, NSREC2012, Miami, Florida, July 16-20, 2012
  320. C320    A. Zanandrea, E. Bahat-Treidel, P. Ivo, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, J. Wuerfl, G. Meneghesso, “Characterization Of Gan-Based Single- And Double-Heterostructure Devices”, 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012,  Porquerolle Island (France), May 28-30, 2012
  321. C321     A. Stocco, M. Meneghini, M. Bertin, D. Marcon, G. Meneghesso, E. Zanoni, “Study of Time-Dependent Degradation of Reverse Biased AlGaN/GaN HEMTs”, 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012,  Porquerolle Island (France), May 28-30, 2012
  322. C322    S. Vaccari, M. Meneghini, N. Trivellin, D. Zhu, C. Humphreys ,R. Butendheich , C. Leirer, B. Hahn, G. Meneghesso, E. Zanoni,  “Extensive Study Of Luminescence Processes Related To Localized Defects In InGaN-Based Light Emitting Diodes” 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012,  Porquerolle Island (France), May 28-30, 2012
  323. C323    P. Marko, A. Alexewicz, M. Meneghini, O. Hilt, G. Meneghesso, J. Würfl, E. Zanoni, G. Strasser, D. Pogany,  “Random Telegraph Noise And Bursts In Reverse-Bias-Stressed AlGaN/Gan HEMTs”, 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012,  Porquerolle Island (France), May 28-30, 2012
  324. C324    G. Meneghesso, P. Specht, S.L. Delage, D. Pavlidis, “Conference Report: 48th Workshop On Compound Semiconductor Materials And Devices (Wocsemmad 2012)” 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012,  Porquerolle Island (France), May 28-30, 2012.
  325. C325     A. Morato, B. Vermang, H. Goverde, G. Meneghesso, J. John, J. Poortmans, R. Mertens,  “Electrical Characterization of Al2O3 Passivation Layers for p-Type CZ-Si PERC Solar Cells”, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012,  Austin, Texas, USA June 3-8, 2012.
  326. C326    M. Barbato, M. Meneghini, V. Giliberto, D. Giaffreda, P. Magnone, R. De Rose, C. Fiegna, G. Meneghesso, “Effect of Shunt Resistance on the Performance of mc-Silicon Solar Cells: A Combined Electro-Optical and Thermal Investigation”, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012,  Austin, Texas, June 3-8, 2012. (Polo Fotovoltaico, Veneto, ERG IUNET)
  327. C327    Enrico Zanoni, Matteo Meneghini and Gaudenzio Meneghesso, “Hot electrons and time-to-breakdown induced degradation in AlGaN/GaN HEMTs”, 19th International Conference on  Microwave Radar and Wireless Communications (MIKON), pp 593-598. Warsaw, Poland, 21-23 May 2012. DOI: 10.1109/MIKON.2012.6233600, ISBN: 978-1-4577-1435-1
  328. C328     G. Verzellesi, D. Saguatti, M. Meneghini, G. Meneghesso, E. Zanoni, “Mechanisms of efficiency droop in InGaN light-emitting diodes a critical analysis” INVITED, 6th Taiwan Solid State Lighting (2012 tSSL), Taipei, Taiwan, June 19-20, 2012
  329. C329    M. Meneghini, N. Trivellin, G. Meneghesso, and E. Zanoni  High-Power LEDs for Solid-State Lighting: Reliability Issues and Degradation Modes, INVITED 13th International Symposium on the Science and Technology of Lighting (LS13), Troy, New York, June 24-29, 2012,
  330. C330     S. Vaccari, M. Meneghini, D. Zhu, C.J. Humphreys, G. Meneghesso, E. Zanoni, “Current and temperature dependence of electroluminescence in InGaN-based LEDs with multi-wavelength emission”, ISSLED 2012 9th International Symposium on, Semiconductor Light Emitting Devices, Berlin, Germany  July 22- 27 2012.
  331. C331    D. Giaffreda, P. Magnone, R. De Rose, M. Barbato, M. Meneghini, V. Giliberto, G. Meneghesso, E. Sangiorgi, C. Fiegna, “A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells” 27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012, Frankfurt, Germany, 24 – 28 September 2012.
  332. C332    E. Zanoni,  M. Meneghini, A. Stocco, G. Meneghesso, “Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions”, 6th Space Agency – ESA MOD Round Table Workshop on Wide Bandgap Semiconductors, European Space & Technology Centre, Noordwijk (The Netherlands), October 8-9, 2012
  333. C333    M. Meneghini, M. Bertin, G. Dal Santo, A. Stocco, D. Bisi, G. Meneghesso, E. Zanoni, D. Marcon, P. E. Malinowski, A. Chini, “Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements” INVITED ISCS 2012, 39th International Symposium on Compound Semiconductors, Compound  Semiconductor Week, Santa Barbara, CA USA, August 27-30, 2012
  334. C334     A. Zanandrea, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Paccagnella, “Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation”, RADECS 2012, 21st European Conference on RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, Biarritz, France, on September 24-28, 2012.
  335. C335    G. Meneghesso, M. Meneghini, E. Zanoni, “Trapping and High Electric Field Parasitic and Degradation phenomena in AlGaN/GaN power HEMTs” INVITED IWN2012 International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012.
  336. C336    M. Meneghini, S. Vaccari, N. Trivellin, D. Zhu, C. J Humphreys, M. Calciati, M. Goano, G. Ghione, E. Bellotti, G. Meneghesso, E. Zanoni, “Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells”, IWN2012 International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012.
  337. C337    P. Marko, A. Alexewicz, M. Meneghini, G. Meneghesso, E. Zanoni, O. Hilt, J. Wuerfl, G. Strasser, D. Pogany, “Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTs”, IWN2012 International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012.
  338. C338     G.Meneghesso, M. Meneghini, A. Zanandrea, F. Rampazzo, A. Stocco, M. Bertin, D. Pogany, E. Zanoni, “Evidence for breakdown luminescence in AlGaN/GaN HEMTs”,  IWN2012 International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012.
  339. C339     N. Trivellin, M. Meneghini,  S. Vaccari, B. Hahn, C. Leirer, G. Meneghesso, E. Zanoni, “Electrical, spectral and thermal analysis of yellow luminescent dots in InGaN green LEDs”, IWN2012 International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012.
  340. C340     M. Meneghini, N. Trivellin, M. Berti, A. Gasparotto, T. Cesca, A. Vinattieri, F. Bogani, D. Zhu, C. J Humphreys, G. Meneghesso, E. Zanoni “Mg diffusion and dislocation modifications during high-temperature annealing of InGaN-based LEDs”, IWN2012 International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012.
  341. C341     M. Meneghini, M. Bertin, G. dal Santo, A. Stocco, A. Chini, D. Marcon, P.E. Malinowski G. Mura, E. Musu, M. Vanzi, G. Meneghesso, and E. Zanoni, “A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps”, IEDM 2012, IEEE International Electron Devices Meeting, San Francisco, December 10-12, 2012

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