Journal Papers

  1. R1    C. Tedesco, C. Canali, A. Neviani, G. Meneghesso, A. Paccagnella, E. Zanoni, “Rapid degradation induced by hot electrons in AlGaAs/GaAs HEMTs”, Proc. of  Int. Symp. GaAs and related compounds, Karuizawa 1992, Inst. Phys. Conf.  Ser. 129: Chapter 9,  pp. 791-796.
  2. R2    G. Meneghesso, E. De Bortoli, A. Paccagnella, E.Zanoni, C. Canali, “Recovery of Low Temperature Electron Trapping in AlGaAs/InGaAs PM-HEMT’s Due to Impact-Ionization”, IEEE Electron Device Letters, Vol. 16, No.7, pp. 336-338, July 1995.
  3. R3    G. Meneghesso, C. Canali, P. Cova, E. De Bortoli, E.Zanoni, “Trapped Charge Modulation: A New Cause of Instability in AlGaAs/InGaAs Pseudomorphic HEMT’s”, IEEE Electron Device Letters, Vol. 17, N.5, pp.232–234, 1996.
  4. R4    G. Meneghesso, A. Paccagnella, Y. Haddab, C. Canali, E. Zanoni, “Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMT’s”, Applied Phys. Lett. Vol. 69, No. 10, pp.1411-1413, 1996.
  5. R5    G. Meneghesso, J.R.M. Luchies, F. Kuper, A.J. Mouthaan, “Turn-On Speed Of Grounded Gate nMOS ESD protection Transistors”, Microelectronics and Reliability, Vol. 36, No. 11/12, pp. 1735-1738, 1996. Also presented at ESREF96 7th European Symposium on Reliability and Failure Analysis, Enschede Olanda, October 8-11, 1996 and awarded with the BEST STUDENT PAPER AWARD
  6. R6    G. Meneghesso, Y. Haddab, N. Perrino, C.Canali, E. Zanoni, “Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT’s”, Microelectronics and Reliability, Vol. 36, No. 11/12, pp. 1895-1898, 1996
  7. R7    G. Meneghesso, E. De Bortoli, D. Sala, E. Zanoni, “Failure Mechanisms of AlGaAs/InGaAs Pseudomorphic HEMT’s: Effects due to Hot-Electrons and Modulation of Trapped Charge”, Microelectronics and Reliability, Vol. 37, No. 7, pp. 1121-1129, 1997.
  8. R8    P. Cova, R. Menozzi, F. Fantini, M. Pavesi, G. Meneghesso, “A Study of Hot-Electron Degradation Effects in  pseudomorphic HEMT’s”, Microel. and Reliability, v. 37, n. 7, pp. 1131-1135, 1997.
  9. R9    G. Meneghesso, A. Paccagnella, D. Camin, N. Fedyakin, G. Pessina, C. Canali, “Study of Neutron Damage in GaAs MESFETs”, IEEE Trans. on Nuclear Science,Vol. 44, No. 3, pp. 840-846, June 1997
  10. R10    G. Meneghesso B. Cogliati, G. Donzelli, D. Sala and E. Zanoni “Development of “kink” in the output I-V characteristics of pseudomorphic HEMT’s after hot-electron accelerated testing” Microelectronics and Reliability, Vol. 37, No. 11/12, pp. 1679-682, 1997
  11. R11    P. Pavan, A. Pellesi, G. Meneghesso and E. Zanoni “Effects of ESD protections latch-up sensitivity of CMOS 4-stripe structure”, Microelectronics and Reliability, Vol. 37, No. 11/12, pp. 1561-1564, 1997
  12. R12    G. Meneghesso, M. Pavesi, S. Pavesi, “Light Emission Measurements: A Promising Tool To Identify Hot Carrier Phenomena”, Phys. Status Sol. (a) Vol 164, pp. 837-843, December 1997.
  13. R13    A. Neviani, G. Meneghesso, E. Zanoni, M. Hafizi, C. Canali, “Positive Temperature Dependence of the Electron Impact Ionization Coefficient in In0.53Ga0.47As/InP HBT’s”, IEEE Electron Device Letters,  Vol. 18, No. 12, pp. 619-621, December  1997
  14. R14    G. Meneghesso, A. Mion, Y. Haddab, M. Pavesi, M. Manfredi, C. Canali, E. Zanoni, “Hot carriers effects in AlGaAs/InGaAs High Electron Mobility Transistors: failure mechanisms induced by hot-carrier testing”, Journal of Applied Physics, Vol. 82, No. 11, pp. 5547-5554, 1 December 1997.
  15. R15    G. Meneghesso, C. Canali, F. Magistrali, D. Sala, M. Vanzi, E. Zanoni, “Failure Mechanisms due to Metallurgical Interaction in Commercially Available AlGaAs/GaAs and AlGaAs/InGaAs HEMT’s”, Microelectronics Reliability (INTRODUCTORY INVITED PAPER), Vol. 38, No. 4, pp. 497-506, 1998. Doi: 10.1016/S0026-2714(97)00050-4
  16. R16    J. Hurt, G. Meneghesso, E. Zanoni, W. C. B. Peatman, R. Tsai, and M. Shur, “Breakdown Behavior of Low Power Pseudomorphic AlGaAs/InGaAs 2D-MESFETs”, IEEE Trans. Electron Devices, Vol. 45, No. 8, pp.1843-1845, August 98.
  17. R17    G. Meneghesso, C. Crosato, F. Garat, G. Martines, A. Paccagnella and E. Zanoni “Failure Mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs Microelectronics Reliability, Vol. 38, No. 9, pp. 1227-1232, 1998.
  18. R18    G. Meneghesso, E. Perin, C. Canali and E. Zanoni, “Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT’s by means of InP etch-stop layer”, Inst. Phys. Conf.  Ser. No. 162 Chap.1, pp. 21-30, 1999. ISBN0750306114,    9780750306119
  19. R19    F. Fantini, M. Borgarino, L. Cattani, P. Cova, R. Menozzi, G. Salviati, C. Canali, G. Meneghesso, E. Zanoni, “Reliability Issue in Compound Semiconductor Heterojunction Devices”, Inst. Phys. Conf.  Ser. No. 162 Chapter 1, pp. 21-30, 1999. (Also INVITED PAPER at 25th International Symposium on Compound Semiconductor, ISCS’98, pp. Fr2B-1, Nara, Japan, October 12-16, 1998.). ISBN 0750306114,    9780750306119
  20. R20    G. Meneghesso, A. Neviani, R. Oesterholt, M. Matloubian, T. Liu, J. Brown, C. Canali and E. Zanoni, “On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMTs with Variable GaInAs Channel Thickness”,IEEE Transactions on Electron Devices, Vol. 46, No. 1, pp. 2-9, Jannuary 1999
  21. R21    R. Gaddi, G. Meneghesso, M. Pavesi, M. Peroni, C. Canali and E. Zanoni, “Electroluminescence Analysis of HFET’s Breakdown”, IEEE Electron Device Letters, Vol. 20, No. 7, pp. 372-374, July 1999
  22. R22    P. Cova, G. Meneghesso, G. Salviati, E.Zanoni, “Cathodoluminescence from hot-electron stressed InP HEMTs”, Microelectronics Reliability, Vol. 39, No. 9, pp. 1073-1078, 1999.
  23. R23    S. Santirosi, G. Meneghesso, E. Novarini, C. Contiero, E. Zanoni, “HBM and TLP ESD robustness in smart-power protection structures”, Microelectronics Reliability, Vol. 39, No. 9, pp. 839-844, 1999. (Also presented at ESREF’99 10th European Symposium on Reliability and Failure Analysis, Bordeaux, France, October 5-8, 1999 and awarded with the BEST PAPER AWARD)
  24. R24    G. Zandler, L. Rossi, A. Di Carlo, L. Tocca, A. Bonfiglio, M. Brunori, P. Lugli, G. Meneghesso E. Zanoni, “Monte Carlo Simulation of Impact Ionization and Light emission in Pseudomorphic HEMT”, Physica B, (272) pp. 558-561, 1999.
  25. R25    G. Meneghesso, E. Zanoni, A. Gerosa, P. Pavan, W. Stadler, K. Esmark, X. Guggenmos “Test Structures and Testing Methods for Electrostatic Discharge – Results of PROPHECY Project”, Microelectronics Reliability, Vol. 39, pp. 635-646, 1999.
  26. R26    G. Meneghesso, G. Massari, D. Buttari,  A. Bortoletto, M. Maretto and E. Zanoni “DC and Pulsed measurements of on-state breakdown voltage”, Microelectronics Reliability, Vol 39, pp. 1759-1763, 1999
  27. R27    E. Zanoni, G. Meneghesso, A. Bortoletto, M. Maretto, G. Massari, D. Buttari “On-state breakdown measurements in GaAs MESFETs and InP-based HEMTs”, Inst. Phys. Conf.  Ser. No. 166 Chapter 5, pp. 317-320, 2000.
  28. R28    G. Meneghesso, T. Grave, M. Manfredi, M. Pavesi, C. Canali, E. Zanoni, , “Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence” IEEE Transaction on Electron Devices, Vol. 47, No. 1, pp. 2-10, 2000
  29. R29    E. Zanoni, G. Meneghesso and R. Menozzi “Electroluminescence and other Diagnostic Techniques for the Study of Hot Electron Effects in Compound Semiconductor Devices” Journal of Chrystal Growth, vol. 210, pp. 331-340, 2000, (Also  INVITED PAPER at 8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors Abstract of DRIP-VIII, p.XII-5, Narita, Japan, September 15-18, 1999)
  30. R30    A. Di Carlo, L. Rossi, P. Lugli, G. Zandler, G. Meneghesso, M. Jackson and E. Zanoni, “Monte Carlo study of the dynamic breakdown Effects in HEMT’s”, IEEE Electron Device Letters, Vol. 21, No. 4, pp. 149-151, 2000.
  31. R31    G. Meneghesso, M. Ciappa, P. Malberti, L. Sponton, G. Croce, C. Contiero, E. Zanoni “Overstress and Electrostatic Discharge in CMOS and BCD Integrated Circuits” Microelectronic Reliability, Vol. 40, pp. 1739-1746, 2000, (Also INVITED PAPER at ESREF’2000 11th European Symposium on Reliability and Failure Analysis, Dresden, Germany October 2-6, 2000)
  32. R32    G. Meneghesso, R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni, “Parasitic effects and long term stability of InP-based HEMTs”, Microelectronics Reliability, Vol.40, pp. 1715-1720, 2000.
  33. R33    E. Zanoni, G. Meneghesso, A. Di Carlo, P. Lugli, L. Rossi “Factors limiting the maximum operating voltage of microwave devices”, International Journal of High Speed Electronics and Systems (IJHSES), March, Vol. 10, No. 01 : pp. 119-128, 2009. doi: 10.1142/S0129156400000155 (In Proc. of WOFE 99, Advanced Workshop on Frontiers in Electronics, pp. 103-104, Villard de Lans (Grenoble), France, May 31-June 4, 1999.)
  34. R34    G. Salviati, N. Armani, P. Cova, G. Meneghesso, E. Zanoni, “Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP based HEMTs”, Material Science and Engineering B, Vol. B26, pp. 289-293, 2001.
  35. R35    D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis and S.S.H. Hsu, “Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs”, IEEE Electron Device Letters, Vol. 22, No. 5, pp. 197-199, May 2001.
  36. R36    A. Sleiman, A. Di Carlo, L. Tocca, P. Lugli, G. Zandler G. Meneghesso, E. Zanoni, C. Canali A. Cetronio, M. Lanzieri, M. Peroni, “Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs” Semiconductor Science and Technology, Vol. 16, No 5, pp. 315-319, 2001.
  37. R37    G. Meneghesso, A. Chini, G. Verzellesi, A. Cavallini, C. Canali and E. Zanoni “Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs”, IEEE Electron Device Letters, Vol.22, No.9, pp. 432-434, 2001.
  38. R38    G. Meneghesso, S.Podda, M.Vanzi, “Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs”, Microelectronics Reliability, Vol. 41, pp. 1609-1614, 2001.
  39. R39    G. Meneghesso, A. Chini, E. Zanoni “Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs”, Microelectronics Reliability, Vol. 41, pp. 1579-1584, 2001.
  40. R40    L. Sponton, L. Cerati, G. Croce, F. Chrappan, C. Contiero, G. Meneghesso, E. Zanoni, “ESD protection structures for BCD5 smart power technologies”, Microel. Reliability, V. 41, pp.1683-1687, 2001.
  41. R41    G. Verzellesi G. Meneghesso, A. Cavallini and E. Zanoni, “Trap Energetic and Spatial Localization in Buried-Gate 6H-SiC JFET’s by Means of Numerical Device Simulation”, IEEE Electron Device Letters . Vol. 22, No. 12, pp. 579-581, December 2001
  42. R42    N. Armani, A. Chini, M. Manfredi, G. Meneghesso, M. Pavesi, V. Grillo, G. Salviati and E. Zanoni “ Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy”, Inst. Phys. Conf. Ser. No 169, pag. 503 (2001)
  43. R43    D. Buttari, A. Chini, G. Meneghesso, E. Zanoni B. Moran, S. Heikman, N.Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, and U. K. Mishra “ Systematic Characterization of Cl2 Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT’s ”, IEEE Electron Device Letters V.23, n.2, pp. 76-78, 2002, Doi: 10.1109/55.981311
  44. R44    D. Buttari, A. Chini, G. Meneghesso, E. Zanoni P. Chavarkar, R. Coffie, N.Q. Zhang, S. Heikman, L. Shen, H. Xing, C. Zheng, and U. K. Mishra “Systematic Characterization of Cl2 Reactive Ion Etching for Gate Recessing in AlGaN/GaN HEMT’s”, IEEE Electron Device Letters, v. 23, n.3, pp.118-120, 2002. Doi:  10.1109/55.988810
  45. R45    A Mazzanti, G. Verzellesi, C. Canali,  G. Meneghesso, E. Zanoni, “Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs”, IEEE Electron Device Letters, vol. 23 n. 7 , pp. 383 –385, 2002.  Doi: 10.1109/LED.2002.1015205
  46. R46    N. Armani, M. Manfredi, M. Pavesi, V. Grillo, G. Salviati, A. Chini, G. Meneghesso, and E. Zanoni, “Characterization of GaN-based metal-semiconductor field-effect transistors  by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy”, Journal of Applied Physics, Vol. 92, no. 5, pp. 2401-2405, 2002. Doi: 10.1063/1.1495536
  47. R47    Gaudenzio Meneghesso and Enrico Zanoni, “Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors”, Microel. Reliability, v. 42, pp. 685-708, 2002.
  48. R48    L. Sponton, L. Cerati, G. Croce G. Mura, S. Podda, M. Vanzi, G. Meneghesso, E. Zanoni, “ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology”, Microelectronics Reliability, Vol. 42, n. 9, pp. 1303-1306, 2002
  49. R49    G. Meneghesso, A. Cocco, G. Mura, S. Podda, M. Vanzi, “Backside Failure Analysis of  GaAs ICs after ESD tests”, Microelectronics Reliability, Vol. 42, n. 9, pp. 1293-1298, 2002.
  50. R50    T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki,  G. Meneghesso, and E. Zanoni “30-nm Two-Step-Recess Gate InP-Based InAlAs/InGaAs HEMT’s”, IEEE Transactions on Electron Devices, vol 49, no. 10, pp. 1694-1700, 2002. Doi: 10.1109/TED.2002.803646
  51. R51    G. Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, and I. Eliashevich “Failure modes and mechanisms of DC-aged GaN LEDs”, Physica Status Solidi (a), Vol. 194, No. 2, pp. 389-392, 2002.  DOI: 10.1002/1521-396X(200212)194:23.0.CO;2-O
  52. R52    Savian, D.; Di Carlo, A.; Lugli, R.; Peroni, M.; Cetronio, C.; Lanzieri, C.; Meneghesso, G.; Zanoni, E.;  “Channel temperature measurement of PHEMT by means of optical probes”, Electronics Letters , Vol. 39 No. 2 pp. 247 -248, 23 Jan 2003.
  53. R53    G. Meneghesso, A. Chini,  M. Maretto, E. Zanoni “Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs”, IEEE Transactions on Electron Devices, Vol. 50, No. 2, pp. 324 -332, Feb. 2003
  54. R54    A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, and U. K. Mishra “A 2.1A/mm Current Density AlGaN/GaN HEMT”, Electronics Letters, V.39  N. 7, pp. 625 -626, 3 2003,
  55. R55    Verzellesi, G.; Basile, A.; Mazzanti, A.; Canali, C.; Meneghesso, G.; Zanoni, E.; “Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs”, Electronics Letters , Vol. 39, No. 10, pp. 810 – 811, 15 May 2003
  56. R56    G. Meneghesso, S. Levada, E. Zanoni, G. Scanmarcio, G. Mura, S. Podda, M. Vanzi, S. Du and I. Eliashevich “Reliability of visible GaN LEDs in plastic package”, Microelectronics Reliability, Vol. 43, pp. 1737-1742, 2003
  57. R57    G. Meneghesso, N. Novembre, E. Zanoni, L. Sponton, L. Cerati, G. Croce, “Optimization of ESD protection structures suitable for BCD6 smart power technology”, Microelectronics Reliability, Vol. 43, pp. 1588-1594, 2003
  58. R58    A. Sleiman, A. Di Carlo, P. Lugli, G. Meneghesso, E. Zanoni, J. L. Thobel, “Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs”, IEEE Transactions on Electron Devices, Vol. 50, No. 10, pp. 2009 -2014,  Oct. 2003.
  59. R59    G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, M. Manfredi, S. Du, and I. Eliashevich, “Reliability analysis of GaN-Based LEDs for solid state illumination”, IEICE Transaction on Electronics, Vol. E86-C, No. 10, pp. 2032-2038, October 2003.
  60. R60    G. Salviati, F. Rossi, N. Armani, M. Pavesi, M. Manfredi, G. Meneghesso, E. Zanoni, A. Castaldini, and A. Cavallini, “Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs”, European Physical Journal – Applied Physics vol. 23 no. 1-3, pp. 345-348, 2004
  61. R61    M. Pavesi, M. Manfredi, G. Salviati, N. Armani, F. Rossi, G. Meneghesso, S. Levada, E. Zanoni, S. Du and I. Eliashevich, “Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress”, Applied Physics Letters, Vol. 84, N. 17, 2004
  62. R62    G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, E. Zanoni, ‘Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs’, IEEE Trans. on Electron Devices, Vol. 51, No. 10, pp. 1554-1561, October 2004.
  63. R63    F. Rampazzo, R. Pierobon, D. Pacetta, C. Gaquiere, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni, ‘Hot carrier aging degradation phenomena in GaN based MESFETs’, Microelectronics Reliability, Vol. 44, pp. 1375-1380, 2004
  64. R64    C. Corvasce, M. Ciappa, D. Barlini, S.Sponton, G. Meneghesso, W. Fichtner, ‘Experimental investigation of self-heating effects in semiconductor resistors during TLP pulses”, Microelectronics Reliability, Vol. 44, pp. 1873-1878, 2004
  65. R65    F. Rossi, N. Armani, G. Salviati, M. Pavesi, G. Meneghesso, S. Levada, and E. Zanoni, “The role of Mg complexes in the degradation of InGaN-based LEDs”, Superlattices and Microstructures, Vol. 36, No. 4-6, pp. 859-868, Oct.-Dec. 2004,
  66. R66    R. Pierobon, G. Meneghesso, E. Zanoni, F. Roccaforte, F. La Via, V. Raineri, ‘Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights’, Material Science Forum, Vol.483-485, pp. 933-936, 2005, doi: 10.4028/www.scientific.net/MSF.483-485.933
  67. R67    J. Bernát, R. Pierobon, M. Marso, J. Flynn, G. Brandes, G. Meneghesso, E. Zanoni, P. Kordoš, “Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs”, Phys. Status Sol. (C) Vol 02, No. 7, pp. 2676-2679, 2005.
  68. R68    A. Castaldini, A. Cavallini, L. Rigutti, M. Meneghini, S. Levada, G. Meneghesso, E. Zanoni, V. Härle, T. Zahner, and U. Zehnder, “Short-term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy” Phys. Status Sol. (C) Vol 02, No. 7, pp. 2862-2865, 2005.
  69. R69    G. Verzellesi, G. Meneghesso, A. Chini, E. Zanoni, C. Canali, “DC-to-RF dispersion in GaAs and GaN based Heterostructure FETs: Performance and reliability issues”, Microelectronics Reliability, Vol. 45, pp. 1585-1592, 2005 (also INVITED Paper at ESREF 2005).
  70. R70    P. Kordoš, J. Bernát, M. Marso, and H. Lüth, F. Rampazzo, G. Tamiazzo, R. Pierobon, and G. Meneghesso, “Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors”, Applied Physics Letters Vol. 86, p. 253511, 2005.
  71. R71    S. Bychikhin and D. Pogany, L. K. J. Vandamme, G. Meneghesso and E. Zanoni, “Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes”, Journal of Applied Physics Vol. 97, p. 123714 1-7, 2005
  72. R72    A. Tazzoli, G. Meneghesso, E. Zanoni “A Novel fast and Versatile Temperature Measurement System for LDMOS Transistors”, Microelectronics Reliability Vol. 45, pp. 1742-1745, 2005
  73. R73    S. Levada, M. Meneghini, G. Meneghesso, E. Zanoni, “Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model”, IEEE Transaction on Device and Material Reliability, Vol.5, No.4, pp. 688-693, 2005.
  74. R74    F. Rossi, M. Pavesi, M. Meneghini, G. Salviati, M. Manfredi, G. Meneghesso, A. Castaldini, A. Cavallini, L. Rigutti, U. Strass, U. Zehnder, and E. Zanoni, “Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes” Journal of Applied Physics Vol. 99, pp. 053104 1-7, 2006.
  75. R75    A. Cester, S. Gerardin, A. Tazzoli, G. Meneghesso, “Electrostatic Discharge Effects in Ultrathin Gate Oxide MOSFETs”, IEEE Transaction on Device and Material Reliability, V.6, No.1, pp.87-94, 2006
  76. R76    F Rossi, G Salviati, M Pavesi, M Manfredi, M Meneghini, G Meneghesso, E Zanoni and Uwe Strauss, “Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence”, Semiconducror  Science and Technology  vol. 21 pp. 638–642, 2006.
  77. R77  T. Suemitsu, Y. K Fukay, M. Tokumitsu, F. Rampazzo, G. Meneghesso, E. Zanoni, “Improved Stability in Wide-recess InP HEMTs by means of a fully passivated two-step-recess gate”, IEICE Electronics Express, Vol. 3, No. 13, 2006
  78. R78    F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Paccagnella, “Degradation Induced by 2-MeV Alpha Particles on AlGaN/GaN High Electron Mobility Transistors”, Microelectronics Reliability Vol. 46 pp. 1750–1753, 2006
  79. R79    M. Meneghini, S. Podda, A. Morelli, R. Pintus, L. Trevisanello, G. Meneghesso, M. Vanzi ,E. Zanoni,, “High brightness GaN LEDs degradation during DC and pulsed stress”, Microelectronics Reliability Vol. 46 pp. 1720–1724, 2006
  80. R80    M. Meneghini, L. R. Trevisanello, U. Zehnder, T. Zahner, U. Strass, G. Meneghesso, E. Zanoni “High-temperature degradation of GaN LEDs related to passivation”, IEEE Transation on Electron Devices, Vol. 53, No. 12, pp. 2981-2987, 2006
  81. R81    G. Meneghesso, F. Rampazzo, P. Kordoš, G. Verzellesi, E. Zanoni, “Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs, IEEE Transaction on Electron Devices, Vol. 53, No. 12, pp. 2932-2941, 2006
  82. R82    Meneghini, L. Trevisanello, S. Levada, G. Meneghesso, E. Zanoni, F. Rossi, M. Pavesi, M. Manfredi, U. Zehnder, U. Strass, “High-temperature failure of GaN LEDs related with passivation”, Superlattices and Microstructures Vol. 40, pp. 405–411, 2006.
  83. R83     A. Tazzoli, F.A. Marino, M. Cordoni, A. Benvenuti, P. Colombo, E. Zanoni and G. Meneghesso, “Holding voltage investigation of advanced SCR-based protection structures for CMOS technology”, Microelectronics Reliability, Vol. 47, No. 9-11, September-November 2007, Pages 1444-1449, (Also presented at  ESREF’07 17th European Symposium on Reliability and Failure Analysis,  and awarded with the BEST PAPER AWARD)
  84. R84    M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso and E. Zanoni, High temperature electro-optical degradation of InGaN/GaN HBLEDs, Microelectronics Reliability, Vol. 47, No. 9-11, September-November 2007, Pages 1625-1629
  85. R85    M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua, “Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs”, Microelectronics Reliability, Vol. 47, No. 9-11, 2007, Pages 1639-1642
  86. R86    A. Tazzoli, V. Peretti, G. Meneghesso, “Electrostatic Discharge and Cycling effects on Ohmic and capacitive RF-MEMS Switches”, IEEE Transaction on Device and Material Reliability, vol. 7, no. 3, pp. 429-437, 2007
  87. R87    M. Meneghini, L.-R. Trevisanello, U. Zehnder, G. Meneghesso, and Enrico Zanoni, “Reversible degradation of ohmic contacts on p-GaN for application in high brightness LEDs”, IEEE Transaction on Electron Devices, vol. 54, no. 12, pp. 3245 – 3251, 2007
  88. R88    S. Gerardin, A Griffoni, A. Tazzoli, A Cester, G. Meneghesso, A. Paccagnella, “Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide”, IEEE Transaction on Nuclear Science, Vol. 54, No. 6, pp. 2204-2209, Dec. 2007,
  89. R89     L. Trevisanello, M. Meneghini, U. Zehnder, B. Hahn, G. Meneghesso, E. Zanoni, “High temperature instabilities of ohmic contacts on p-GaN”,  Physica Status Solidi (c) Vol. 5, No. 2, pp. 435–440, 2008
  90. R90    M. Pavesi, M. Manfredi, F. Rossi, M. Meneghini, G. Meneghesso, E. Zanoni and Ulrich Zehnder “Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes”,  Journal of Applied Physics vol. 103, pp. 024503 1-5, 2008.
  91. R91    M. Meneghini, L. Trevisanello, U. Zehnder, G. Meneghesso, and E. Zanoni, “Thermal degradation of InGaN/GaN LEDs ohmic contacts”,  Physica Status Solidi (c) Vol. 5, No. 6, 2250–2253,  2008.
  92. R92    M. Meneghini, G. Meneghesso, N. Trivellin, E. Zanoni, K. Orita, M. Yuri, D. Ueda, “Extensive Analysis of the Degradation of Blu-Ray Laser Diodes”, IEEE Electron Device Letters, Vol.9,  n. 6, pp. 578 – 581, 2008.
  93. R93    S. Buso, G. Spiazzi, M. Meneghini, G. Meneghesso, “Performance Degradation of High Brightness Light Emitting Diodes under  DC and Pulsed Bias”,  Invited Paper: IEEE Trans. on Device and Material Reliability vol. 8, no. 12, pp. 312 – 322, 2008
  94. R94    M. Meneghini, L. Rigutti, L.R. Trevisanello, A. Cavallini, A. Castaldini, G. Meneghesso, E. Zanoni, “A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs” Journal of Applied Physics, vol. 103, pp. 063703-1/7, 2008
  95. R95    M. Meneghini, M. Pavesi, N. Trivellin, R. Gaska, E. Zanoni, G. Meneghesso, “Reliability of deep-UV Light-Emitting Diodes”,  Invited Paper: IEEE Trans. on Device and Material Reliability, vol. 8, no. 2, pp. 248 – 254, 2008
  96. R96    L.R. Trevisanello, M. Meneghini, G. Mura, M. Vanzi,  M. Pavesi, G. Meneghesso, E. Zanoni, “Accelerated Life Test of High Brightness Light Emitting Diodes”,  Invited Paper: IEEE Trans. on Device and Material Reliability, vol. 8, no. 2, pp. 304 – 311, 2008
  97. R97    M. Meneghini, L.R. Trevisanello, G. Meneghesso, E. Zanoni, “A review on the reliability of GaN-based LEDs”,  Invited Paper: IEEE Trans. on Device and Material Reliability, vol. 8, no. 2, pp. 323-331, 2008
  98. R98    M. Faqir, G. Verzellesi, A. Chini, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, C. Dua, “Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility Transistors”,  Invited Paper: IEEE Trans. on Device and Material Reliability, vol. 8, no. 2, pp. 240-247, 2008
  99. R99    G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon A. Tazzoli, M. Meneghini and E. Zanoni, “Reliability of GaN High Electron Mobility Transistors:  state of the art and perspectives”, Invited Paper: IEEE Trans. on Device and Material Reliability, vol. 8, no. 2, pp. 332-342, 2008
  100. R100    M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini “Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMT”, IEEE Transaction on Electron Devices, vol. 55, no. 7, pp. 1592-1602, 2008
  101. R101    A. Tazzoli, G. Meneghesso, F. Zanon, F. Danesin, E. Zanoni, P. Bove, R. Langer, J. Thorpe, “Electrical Characterization and Reliability Study of HEMTs on Composite Substrates under High Electric Fields”,  Microelectronics Reliability, Vol. 47, No. 9-11, pp. 1361-1365, 2008
  102. R102    F. Danesin, A. Tazzoli, F. Zanon, G. Meneghesso, E, Zanoni, A. Cetronio, C. Lanzieri, S. Lavanga, M. Peroni, P. Romanini, “Thermal Storage Effects on AlGaN/GaN HEMT”, Microelectronics Reliability, Vol. 47, No. 9-11, pp. 1370-1374, 2008
  103. R103    E. Orietti, N. Montemezzo, S. Buso, G. Meneghesso, A. Neviani, G. Spiazzi, “Reducing the EMI susceptibility of a Kuijk Bandgap”, IEEE Transactions on Electromagnetic Compatibility  Vol. 50, No. 4, pp. 876-886, 2008
  104. R104    A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, IEEE Transactions on Nuclear Science Vol.55, N. 6, pp. 3182-3188, Dec. 2008
  105. R105 M.-A. di Forte Poisson, M. Magis, M. Tordjman, J. Di Persio, R. Langer, L. Toth, B. Pecz, M. Guziewicz, J. Thorpe, R. Aubry, E. Morvan, N. Sarazin, C. Gaquière, G. Meneghesso, V. Hoel, J.-C. Jacquet and S. Delage, “GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application” Journal of Crystal Growth Volume 310, Issue 23, 15 November 2008, Pages 5232-5236
  106. R106 G. Meneghesso, F. Zanon, M. J. Uren, E. Zanoni, “Anomalous kink effect in GaN High Electron Mobility Transistors”, IEEE Electron Device Letters, vol. 30, no. 2, pp. 100-102, February 2009
  107. R107    M. Meneghini, N. Trivellin, E. Zanoni, G. Meneghesso, K. Orita, M. Yuri, D. Ueda, “Analysis of the role of current, temperature and optical power in the degradation of InGaN-based laser diodes” IEEE Transaction on Electron Devices, Vol. 56, No. 2, pp. 222-228, Feb. 2009
  108. R108 Meneghini, M.; Trivellin, N.; Orita, K.; Takigawa, S.; Yuri, M.; Tanaka, T.; Ueda, D.; Zanoni, E.; Meneghesso, G. “Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination”, IEEE Electron Device Letters,  Vol. 30,  No. 4,  April 2009,  pp. 356 – 358.
  109. R109 E.  Zanoni, F. Danesin, M. Meneghini, A. Cetronio, C. Lanzieri, M. Peroni, G. Meneghesso, “Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing”, IEEE Electron Device Letters,  Vol. 30,  No. 5, May 2009,  pp. 427 – 429.
  110. R110  A. Chini, M. Esposto, G. Meneghesso, and E. Zanoni., “Evaluation of GaN HEMTs degradation by means of Pulsed I-V, leakage and DLTS measurements”, IEE Electronics Letters Vol.  45, No. 8, pp. 426 – 427, 2009. Doi: 10.1049/el.2009.0533
  111. R111    A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, Ben Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A. Nackaerts, “Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays”, IEEE Transactions on Nuclear Science, Vol. 56, No. 4, pp. 2205-2212, August 2009
  112. R112 M. Meneghini, N.  Trivellin, G. Meneghesso, L.  Trevisanello,  E.  Zanoni, K.  Orita, M.  Yuri, D.  Ueda, “Analysis of the role of current in the  degradation of InGaN-based laser  diodes”, Physica Status Solidi C 6, S2, S844-S847, 2009
  113. R113 N. Trivellin, M. Meneghini, G. Meneghesso, E. Zanoni, K. Orita, M. Yuri, T. Tanaka and D. Ueda  “Reliability analysis of InGaN Blu-Ray Laser Diode”, Microelectronics Reliability, Vol. 49,  pp. 1236 – 1239, 2009. (Also presented at  ESREF’09 19th European Symposium on Reliability and Failure Analysis,  and awarded with the BEST PAPER AWARD)
  114. R114 N. Ronchi, F. Zanon, A. Stocco, A. Tazzoli, E. Zanoni and G. Meneghesso “Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long term DC life test”, Microelectronics Reliability, Vol. 49, pp. 1207 – 1210, 2009
  115. R115 A. Tazzoli, L. Cerati, A. Andreini, G. Meneghesso “Breakdown Characterization of Gate Oxides in 35 and 70 Å BCD8 Smart Power Technology”, Microelectronics Reliability, Vol. 49,  pp. 1111 – 1115, 2009.
  116. R116 M. Meneghini, U. Zehnder, B. Hahn, G. Meneghesso, E. Zanoni, “Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress”, IEEE Electron Device Letters,  Vol. 30,  No. 10, 2009,  pp. 1051 – 1053
  117. R117 A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, “Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation”, IEEE Electron Device Letters,  Vol. 30,  No. 10,  pp. 1021 – 1023, 2009.
  118. R118 M. Meneghini, N. Trivellin, M. Pavesi, M. Manfredi, U. Zehnder, B. Hahn, G. Meneghesso, and E. Zanoni, “Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes”, Applied Physics Letters 95, pp. 173507 1-3, 2009.
  119. R119    A. Tazzoli, E. Autizi, V. Peretti, G. Meneghesso, “Stiction Induced by Dielectric Breakdown on rf-MEMS Switches”, in “New Developments in Micro Electro Mechanical Systems for Radio Frequency and Millimeter Wave Applications” Rditors: G. Kostantinidis, A. Muller, D. Dascalu, R. Plana, vol. 15, Editura Academiei Romane, Bucarest, 2009, pp. 311-320. ISBN: 978-973-27-1813-1
  120. R120 M. Meneghini,  N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, “A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes”, Journal of Applied Physics, vol. 106, 114508 1-4, 2009
  121. R121 A. Griffoni, S. Gerardin, P.J. Roussel, R. Degraeve, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “A Statistical Approach to Microdose Induced Degradation in FinFET Devices”, IEEE Transaction on Nuclear Science, Vol. 56, no. 6, pp. 3285-3292, 2009.
  122. R122 Rigutti L, Basirico L, Cavallini A, Meneghini M, Meneghesso G, Zanoni E.,  “Redistribution of multi-quantum well states induced by current stress in InxGa1-xN/GaN light-emitting diodes”,  Semiconductor Science And Technology, vol. 24; 055015, 2009  ISSN: 0268-1242, doi: 10.1088/0268-1242/24/5/055015
  123. R123 Kumar, M. J.; Lunardi, L.; Meneghesso, G.; Pearton, S. J.; Schubert, E. F.; “Guest Editorial Special Issue on Light-Emitting Diodes” IEEE Transactions on Electron Devices,  Vol. 57,  No 1, pp 7 – 11 January 2010. Doi: 10.1109/TED.2009.2035570
  124. R124    M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, E. Zanoni, “A review on the physical mechanisms that limit the reliability of GaN-based LEDs”, IEEE Transaction on Electron Devices – Special Issue on Light-Emitting Diodes, Vol. 57,  No. 1, pp. 108 – 118, 2010. Doi: 10.1109/TED.2009.2033649
  125. R125 A. Pinato, A. Cester, M. Meneghini, N. Wrachien, A. Tazzoli, S. Xia, V. Adamovich, M. S. Weaver, J. J. Brown, E. Zanoni, G. Meneghesso, IEEE “Impact of trapped charge and interface defects on the degradation of the optical and electrical characteristics in NPD/Alq3 OLEDs” IEEE Transaction on Electron Devices – Special Issue on Light-Emitting Diodes, Vol. 57,  No. 1, pp. 178 – 187, 2010. Doi: 10.1109/TED.2009.2034505
  126. R126    C. Claeys, S. Put, A. Griffoni, A. Cester, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, “Impact of radiation on the operation and reliability of deep submicron CMOS”, ECS Transactions, The Electrochemical Society, 27 (1) 39-46 (2010) doi: 10.1149/1.3360593 , ISSN: 1938-5862
  127. R127 A. Griffoni, S. Thijs, C. Russ, D. Trémouilles, D. Linten, M. Scholz, E. Simoen, C. Claeys, G. Meneghesso, and G. Groeseneken, “Electrical-Based ESD Characterization Methodology for Ultrathin Body SOI MOSFETs”, IEEE Transaction on Device and Materials Reliability, Vol. 10,  No. 1, 2010,  pp. 130 – 141. doi: 10.1109/TDMR.2009.2036156
  128. R128 N. Trivellin, M. Meneghini, E. Zanoni, G. Meneghesso, K. Orita, M. Yuri, T. Tanaka, D. Ueda, “Degradation of InGaN-based laser diodes due to increate non-radiative recombination Physica Status Solidi A, vol. 207, No. 1, 41–44, 2010. DOI 10.1002/pssa.200982620
  129. R129 M. Meneghini, N. Trivellin, R. Butendeich, U. Zehnder, B. Hahn, G. Meneghesso and E. Zanoni “Reliability of InGaN-based LEDs submitted to reverse-bias stress”, Phys. Status Solidi C, vol. 7, n. 7-8 p.2208-2010, 2010. DOI 10.1002/pssc.200983535,
  130. R130 M. Meneghini, N. Trivellin, K. Orita, M. Yuri, T. Tanaka, D. Ueda, E. Zanoni, G. Meneghesso, “Reliability evaluation for Blu-Ray laser diodes”, Microelectronic Reliability, Vol. 50,  No. 4, pp. 467– 470, 2010. doi:10.1016/j.microrel.2010.01.034
  131. R131 A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, and C. Claeys, “Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs”, IEEE Transaction on Nuclear Science. vol. 54, no. 4, pp. 1924 – 1932, 2010. doi: 10.1109/TNS.2010.2040196
  132. R132 M. Meneghini, A.Tazzoli, A, Butendeich, B. Hahn, G. Meneghesso, E. Zanoni, “Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing, IEEE Electron Device Letters, vol. 31, No. 6, pp. 579-581, 2010, DOI 10.1109/LED.2010.2045874
  133. R133 G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, A. Chini and E. Zanoni,  “Reliability issues of Gallium Nitride High Electron Mobility Transistors”, International Journal of Microwave and Wireless Technologies, Vol. 2, No. 01, pp 39-50, 2010. doi:10.1017/S1759078710000097
  134. R134 M. Meneghini, G. Meneghesso, E. Zanoni, “State of the art in the reliability of GaN-based LEDs”, Journal of LED Vol. 2 No. 1, April 2010, (ISSN #1930-7772)
  135. R135 A. Tazzoli, M. Barbato, F. Mattiuzzo, V. Ritrovato, G. Meneghesso, “Study of the Actuation Speed, Bounces Occurrences, and Contact Reliability of Ohmic RF-MEMS Switches”, Microelectronics Reliability, Vol. 50,  pp.1604–1608, 2010. DOI:10.1016/j.microrel.2010.07.034.
  136. R136 A. Tazzoli, M. Cordoni, P. Colombo, C. Bergonzoni, G. Meneghesso, Time-To-Latch-Up Investigation of SCR Devices as ESD Protection Structures on 65 nm Technology Platform”, Microelectronics Reliability, Vol. 50,  pp.1373–1378, 2010. DOI:10.1016/j.microrel.2010.07.034.
  137. R137 J. Iannacci, A. Repchankova, A. Faes, A. Tazzoli, G. Meneghesso and Gian-Franco Dalla Betta “Enhancement of RF-MEMS Switch Reliability Through an Active Anti-Stiction Heat-Based Mechanism”, Microelectronics Reliability, Vol. 50,  pp.1599–1603, 2010. DOI:10.1016/j.microrel.2010.07.034.
  138. R138 M. Meneghini, D. Barbisan, Y. Bilenko, M. Shatalov, J. Yang, R. Gaska, G. Meneghesso and E. Zanoni, “Defect-related degradation of Deep-UV LEDs”, Microelectronics Reliability, Vol. 50,  pp. 1538–1542, 2010. DOI:10.1016/j.microrel.2010.07.034.
  139. R139 A. Cester, D. Bari, J. Framarin, N. Wrachien, G. Meneghesso, S. Xia, V. Adamovich, J. J. Brown,   “Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED”, Microelectronics Reliability, Vol. 50,  pp.1866–1870, 2010. DOI:10.1016/j.microrel.2010.07.034.
  140. R140 V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, A. Chini, “Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress”, Microelectronics Reliability, Vol. 50,  pp.1523–1527, 2010. DOI:10.1016/j.microrel.2010.07.034.
  141. R141 G. Meneghesso, M. Meneghini and E. Zanoni, “Recent results on the degradation of white LEDs for lighting”, Journal of Physics D: Appl. Phys. 43, pp. 354007, (2010). doi: 10.1088/0022-3727/43/35/354007
  142. R142 G. Meneghesso, F. Rossi, G. Salviati, M. J. Uren, E. Muñoz, and E. Zanoni, “Correlation between kink and cathodoluminescence spectra in AlGaN/GaN High Electron Mobility Transistors”, Applied Physics Letters  vol. 96, pp. 263512 (3 pages), 2010; doi:10.1063/1.3459968
  143. R143 J. Iannacci, A. Repchankova, A. Faes, A. Tazzoli, G. Meneghesso and M. Niessner, “Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches ” Procedia Engineering, 05 (2010) 734–737, 2010  (Proc. Eurosensors XXIV, September 5-8, 2010, Linz, Austria), doi:10.1016/j.proeng.2010.09.213
  144. R144 M. Meneghini, M. Scamperle, M. Pavesi, M. Manfredi, T. Ueda, H. Ishida, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Electron and hole-related luminescence processes in gate injection transistors”, Applied Physics Letters  vol. 97, pp. 033506 (3 pages), 2010; doi:10.1063/1.3467039
  145. R145 M. Meneghini, A. Stocco, N. Ronchi, F. Rossi, G. Salviati, G. Meneghesso, and E. Zanoni, “Extensive analysis of the luminescence properties of AlGaN/GaN HEMTs” Applied Physics Letters vol.  97, 063508,  2010. doi:10.1063/1.3479917
  146. R146  M. Meneghini, D. Barbisan, L. Rodighiero, G. Meneghesso, and E. Zanoni,  “Analysis of the physical processes responsible for the degradation of Deep-Ultraviolet Light Emitting Diodes”, Applied Physics Letters, Vol. 97, 143506 (2010), doi:10.1063/1.3497082
  147. R147 M. Meneghini, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni “Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements”,  Applied Physics Letters vol. 97, 263501, 2010. doi:10.1063/1.3527088
  148. R148 D.A. Cullen, D. J. Smith, A. Stocco, G. Meneghesso, E. Zanoni, M.R. McCartney “Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography”, Microscopy and Microanalysis 2010, Vol. 16, pp. 800-801, 2010. doi:10.1017/S1431927610056722 2011
  149. R149 V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, A. Chini, “An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations  of DC Characteristics and Scattering Parameters”, Journal of ELECTRONIC MATERIALS,  vol. 40, p. 362-368, ISSN: 0361-5235, 2011. doi: 10.1007/s11664-010-1434-7
  150. R150 Fabio Alessio Marino, and Gaudenzio Meneghesso, “WJM Multifunctional Field-Effect Transistor for High-Density Integrated Circuits”, IEEE Electron Device Letters, vol. 32, No. 3, pp. 264-266, 2011 DOI 10.1109/LED.2010.2099097
  151. R151 N. Wrachien, A. Cester, Y. Q. Wu,  P. D. Ye, E. Zanoni, and G. Meneghesso, “Effects of Positive and Negative Stresses on III–V MOSFETs With Al2O3 Gate Dielectric”, IEEE Electron Device Letters, vol. 32, No. 4, pp. 488-490, 2011 DOI 10.1109/LED.2011.2106107
  152. R152 A.Tazzoli and G. Meneghesso, “Acceleration of Microwelding on Ohmic RF-MEMS Switches”,  IEEE Journal of MicroElectroMechanical Systems, vol. 20, No. 3, pp. 552-554, 2011 DOI 10.1109/JMEMS.2011.2140360 (IUNET, ENIAC-END)
  153. R153  F. Solazzi, A. Tazzoli, P. Farinelli, A. Faes, V. Mulloni, B. Margesin, G. Meneghesso, “Design and Characterization of an Active Recovering Mechanism for High Performance RF MEMS Redundancy Switches”, International Journal of Microwave and Wireless Technologies, Vol. 3, no.  5, pp. 539 –546, 2011, doi:10.1017/S1759078711000675 (IUNET, ENIAC-END)
  154. R154 D. Bari, N. Wrachien, A. Cester, G. Meneghesso, R. Tagliaferro, S. Penna, T. M. Brown, A. Reale, A. Di Carlo, “Thermal Stress Effects on Dye-Sensitized Solar Cells (DSSCs)”, Microelectronics Reliability, Vol. 51, pp. 1762–1766, 2011. doi:10.1016/j.microrel.2011.07.061
  155. R155 M. Dal Lago, M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, “Degradation mechanisms of high-power white LEDs activated by current and temperature”, Microelectronics Reliability, Vol. 51, pp. 1742–1746, 2011. doi:10.1016/j.microrel.2011.06.057
  156. R156 N. Trivellin, M. Meneghini, C. De Santi, S. Vaccari, G. Meneghesso, E. Zanoni,  K. Orita, S. Takigawa, T. Tanaka, D. Ueda, “Degradation of InGaN lasers: role of non-radiative recombination and injection efficiency”, Microelectronics Reliability, Vol. 51, pp. 1747–1751, 2011. doi:10.1016/j.microrel.2011.07.038
  157. R157 J. Iannacci, A. Faes, A. Repchankova, A. Tazzoli, and G. Meneghesso, “An active heat-based restoring mechanism for improving the reliability of RF MEMS switches”, Microelectronics Reliability, Vol. 51, n. 9-11,  pp. 1869-1873, doi. 10.1016/j.microrel.2011.06.019, ISSN 0026-2714 (IUNET, ENIAC-END)
  158. R158 A. Massenz, M. Barbato, V. Giliberto, B. Margesin, S. Colpo, and G. Meneghesso, “Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test”, Microelectronics Reliability, Vol. 51, n. 9-11,  pp. 1887–1891, 2011, doi:10.1016/j.microrel.2011.07.002 (IUNET, ENIAC-END)
  159. R159 A. Tazzoli, I. Rossetto, E. Zanoni, D. Yufeng, T. Tomasi, G. Meneghesso, “ESD Sensitivity of a GaAs MMIC Microwave Power Amplifier”, Microelectronics Reliability, Vol. 51, n. 9-11, pp. 1602-1607, 2011. doi: doi:10.1016/j.microrel.2011.06.051 (IUNET)
  160. R160 M. Meneghini, N. Ronchi, A. Stocco, G. Meneghesso, U. K. Mishra,  Yi Pei, E. Zanoni, “Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electro-optical method”, IEEE Transaction on Electron Devices, Vol. 58,  No. 9, pp. 2296-3003, 2011. doi: 10.1109/TED.2011.2160547
  161. R161 M. Meneghini, C. de Santi, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni, “Investigation of the deep level involved in InGaN laser degradation by Deep Level Transient Spectroscopy”, Applied Physics Letters vol. 99, 093506, 2011. doi:10.1063/1.3626280
  162. R162  A. Tazzoli, M. Barbato, V. Ritrovato, G. Meneghesso, “A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures”, Journal of Electrostatics, Journal of Electrostatics 69 (2011), pp. 547-553.  doi:10.1016/j.elstat.2011.07.007 (IUNET, ENIAC-END)
  163. R163 N. Wrachien, A. Cester, D. Bari, J. Kovac, J. Jakabovic, D. Donoval, G. Meneghesso, “Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors”, IEEE Transaction on Nuclear Science, Vol. 58,  No. 6, pp. 2911-2917, 2011. doi: 10.1109/TNS.2011.2170432
  164. R164 Fabio Alessio Marino, and Gaudenzio Meneghesso “Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits”,  IEEE Transaction on Electron Devices, Vol. 58,  No. 12, pp. 4226-4234, 2011. doi. 10.1109/TED.2011.2169067 2012
  165. R165 M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN HEMTs under reverse bias”, Applied Physics Letters vol. 100, pp. 033505-1,2,3, 2012. doi:10.1063/1.3678041
  166. R166 D. Bari, A. Cester, N. Wrachien, L. Ciammaruchi, T. M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, “Reliability Study of Ruthenium-Based Dye-Sensitized Solar Cells (DSCs)”, IEEE Journal of Photovoltaics, Vol.. 2, No. 1, pp. 27 – 34, January 2012. doi: 10.1109/JPHOTOV.2011.2180702
  167. R167 A. Persano, A. Tazzoli, A. Cola, P. Siciliano, G. Meneghesso, and F. Quaranta, “Reliability Enhancement by Suitable Actuation Waveforms for Capacitive RF MEMS Switches in III-V Technology”, accepted to be published on IEEE Journal of MicroElectroMechanical Systems, vol. 21, No. 2, pp. 414-419, 2012,  doi. 10.1109/JMEMS.2011.2175366
  168. R168 M. Meneghini C. de Santi, T. Ueda, T. Tanaka, D. Ueda, E. Zanoni, G. Meneghesso,  “Time and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate”, IEEE Electron Device Letters, Vol. 33,  No. 3, pp. 375-377, 2012,  doi: 10.1109/LED.2011.2181815
  169. R169    P. Marko, A. Alexewicz, O. Hilt, G. Meneghesso, E. Zanoni, J. Wuerfl, G. Strasser, and D. Pogany,  “Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors”, Applied Physics Letters vol. 100, pp. 143507-1,2,3, 2012. doi:10.1063/1.3701164
  170. R170 M. Meneghini, A. Stocco, R. Silvestri, G. Meneghesso, and E. Zanoni, “Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons”, Applied Physics Letters vol. 100, pp. 233508, 2012. doi:10.1063/1.4723848 (Progetto Giovani 2010, ONR, Garante, Manga)
  171. R171    M.Meneghini, S. Vaccari, N. Trivellin, D. Zhu, C. Humphreys, R. Butendheich, C. Leirer, B. Hahn, G. Meneghesso, E. Zanoni, “Analysis of defect-related localized emission processes in InGaN/GaN based LEDs”, IEEE Transaction on Electron Devices, Vol. 59,  No. 5, pp. 1416-1422, 2012. doi: 10.1109/TED.2012.2186970
  172. R172    A. Chini, V. Di Lecce, F. Fantini, G. Meneghesso, E. Zanoni, “Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation”, IEEE Transaction on Electron Devices, Vol. 59,  No. 5, pp. 1385-1392, 2012, doi:10.1109/TED.2012.2188636
  173. R173    D. Saguatti, L. Bidinelli, G. Verzellesi, M. Meneghini, G. Meneghesso, E. Zanoni, R. Butendeich, B. Hahn , “Investigation of Efficiency Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes”, IEEE Transaction on Electron Devices, Vol. 59,  No. 5, pp. 1402-1409, 2012. doi: 10.1109/TED.2012.2186579
  174. R174 N. Wrachien, A. Cester, D. Bari, J. Jakabovic, J. Kovac, D. Donoval, and G. Meneghesso, “Visible Light and Low-Energy UV Effects on Organic Thin-Film-Transistors”, IEEE Transaction on Electron Devices, Vol. 59,  No. 5, pp. 1501-1509, 2012. doi: 10.1109/TED.2012.2187338
  175. R175    K. Orita, M. Meneghini, H. Ohno, N. Trivellin, N. Ikedo, S. Takigawa, M. Yuri, T. Tanaka, E. Zanoni, and G. Meneghesso, “Analysis of Diffusion-Related Gradual Degradation of InGaN-based Laser Diodes” , IEEE Journal of Quantum Electronics,  vol 48, no. 9, pp. 1169-1196, 2012. doi: 10.1109/JQE.2012.2203795.
  176. R176 M. Meneghini; M. dal Lago; N. Trivellin; G. Mura; G. Meneghesso; E. Zanoni, “Chip and package-related degradation of high power white LEDs”,  Invited MR, Microelectronics Reliability 52, 804–812 (2012), doi:10.1016/j.microrel.2011.07.091
  177. R177 M. Meneghini, M. Dal Lago, L. Rodighiero, N. Trivellin, E. Zanoni, G. Meneghesso,  “Reliability issues in GaN-Based Light-Emitting Diodes: effect of dc and PWM stress”, Microelectronics Reliability 52, 1621–1626, 2012, doi: 10.1016/j.microrel.2011.10.012
  178. R178    G. De Pasquale, M. Barbato, V. Giliberto, G. Meneghesso, A. Somà, Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 1808-1811, 2012. ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.028
  179. R179    I. Rossetto, M. Meneghini, T. Tomasi, D. Yufeng, G. Meneghesso, E. Zanoni, Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2093–2097, 2012.  ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.132
  180. R180    A. Chini, F. Soci, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, D. Bisi, G. Meneghesso, E. Zanoni, Field plate related reliability improvements in GaN-on-Si HEMTs, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2153-2158, 2012.  ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.040.
  181. R181    M. Dal Lago, M. Meneghini, N. Trivellin, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, Phosphors for LED-based light sources: Thermal properties and reliability issues, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2164–2167, 2012.  ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.036.
  182. R182    P. Marko, M. Meneghini, S. Bychikhin, D. Marcon, G. Meneghesso, E. Zanoni, D. Pogany, IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2194–2199, 2012, ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.030.
  183. R183    A. Persano, A. Tazzoli, P. Farinelli, G. Meneghesso, P. Siciliano, F. Quaranta, K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2245-2249, 2012. ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.008.
  184. R184    A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo, J. Wuerfl, G. Meneghesso, Single- and double-heterostructure GaN-HEMTs devices for power switching applications, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2426–2430, 2012. ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.062. – Best Paper Award at ESREF 2012
  185. R185    N. Wrachien, D. Bari, J. Kovac, J. Jakabovic, D. Donoval, G. Meneghesso, A. Cester, Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2490-2494, 2012.  ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.055.
  186. R186    D. Bari, N. Wrachien, R. Tagliaferro, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester, Reliability study of dye-sensitized solar cells by means of solar simulator and white LED, Microelectronics Reliability, Vol. 52, No. 9-10, pp. 2495-2499, 2012, ISSN 0026-2714, doi: 10.1016/j.microrel.2012.06.061.
  187. R187    H. Goverde, B. Vermang, A. Morato, J. John, J. Horzel, G. Meneghesso, J. Poortmans, “Al2O3 Surface Passivation Characterized on Hydrophobic and Hydrophilic c-Si by a Combination of QSSPC, CV, XPS and FTIR Original Research Article”, Energy Procedia, Volume 27, 2012, Pages 355-360. DOI: 10.1016/j.egypro.2012.07.076  ISSN: 1876-6102. (no ack PD),
  188. R188    Wrachien, N.; Cester, A.; Bari, D.; Kovac, J.; Jakabovic, J.; Weis, M.; Donoval, D.; Meneghesso, G. “Improved Tolerance Against UV and Alpha Irradiation of Encapsulated Organic TFTs”, IEEE Transactions on Nuclear Science,  Vol. 59 , n. 6 , Part: 1, 2012 , Page(s): 2979 – 2986,  DOI: 10.1109/TNS.2012.2222439
  189. R189 M. Meneghini, M. Dal Lago, N. Trivellin, G. Meneghesso, E. Zanoni, “Thermally-activated degradation of remote phosphors for application in LED lighting” IEEE Transaction on Device and Materials Reliability, Vol. 13, No. 1, pp. 316-318, 2013 ISSN: 1530-4388, doi: 10.1109/TDMR.2012.2214780
  190. R190 Cullen, D.; Smith, D.; Passaseo, A.; Tasco, V.; Stocco, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E., Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 1, pp. 126-135,  2013, ISSN: 1530-4388, doi: 10.1109/TDMR.2012.2221464
  191. R191    M. Meneghini, M. Bertin, A. Stocco, G. dal Santo, D. Marcon, P. E. Malinowski, A. Chini, G. Meneghesso, and E. Zanoni, “Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface”, Appl. Phys. Lett. vol. 102, no. 16, pp.: 163501 – 163501-3 (2013),  doi:10.1063/1.4802011
  192. R192 G. Meneghesso; M. Meneghini; A. Stocco; D. Bisi; C. De Santi; I. Rossetto; A. Zanandrea; F. Rampazzo; E. Zanoni, “Degradation of AlGaN/GaN HEMT devices: role of reverse-bias and hot electron stress” Microelectronic Engineering, Vol. 109, pp. 257-261, 2013  doi: 10.1016/j.mee.2013.03.017, APII: S0167-9317(13)00233-5
  193. R193 M. Meneghini, A. Zanandrea, F. Rampazzo, A. Stocco, M. Bertin, G. Cibin, D. Pogany, E. Zanoni, and G. Meneghesso, “Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions”, Japanese Journal of Applied Physics 52 (2013) 08JN17, doi: 10.7567/JJAP.52.08JN17
  194. R194 M. Meneghini, S. Vaccari, A. Garbujo, N. Trivellin, D. Zhu, C. J. Humphreys, M. Calciati, M. Goano, F. Bertazzi, G. Ghione, E. Bellotti, G. Meneghesso, and E. Zanoni, “Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells”, Jpn. J. Appl. Phys. 52 (2013) 08JG09, doi: 10.7567/JJAP.52.08JG09.
  195. R195    M. Meneghini, G. Meneghesso, E. Zanoni, “Analysis of the reliability of AlGaN/GaN HEMTs submitted to on-state stress based on Electroluminescence investigation”, IEEE Transaction on Device and Materials Reliability, vol.13, no.2, pp.357 – 361, June 2013 doi:  10.1109/TDMR.2013.2257783
  196. R196 G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, A. Cester, U.K. Mishra, E. Zanoni, “Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements”, Semiconductor Science and Technology, Vol. 28, Pages: 074021, 2013, doi: 10.1088/0268-1242/28/7/074021
  197. R197 G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, E Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies” Journal of Applied Physics, vol. 114, no.7, pp: Page(s): 071101 – 071101-14 (2013); doi: 10.1063/1.4816434
  198. R198 S. Vaccari, M. Meneghini, A. Griffoni, D. Barbisan, M. Barbato, S. Carraro, M. La Grassa, G. Meneghesso, E. Zanoni, “ESD Characterization of Multi-Chip RGB LEDs”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1510-1513, 2013. ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2013.07.049
  199. R199 C. De Santi, M. Meneghini, S. Carraro, S. Vaccari, N. Trivellin, S. Marconi, M. Marioli, G. Meneghesso, E. Zanoni, “Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1534-1537, 2013. ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2013.07.053
  200. R200 N. Wrachien, A. Cester, D. Bari, R. Capelli, R. D’Alpaos, M. Muccini, A. Stefani, G. Turatti, G. Meneghesso “Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1798-1803, 2013. ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2013.07.085
  201. R201 D. Bari, N. Wrachien, R. Tagliaferro, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester,  “Comparison between positive and negative constant current stress on dye-sensitized solar cells”, Microelectronics Reliability, I vol. 53, no. 9-11, pp. 1804-1808, 2013. ISSN 0026-2714, doi 10.1016/j.microrel.2013.07.093
  202. R202 C. Fleury, R. Zhytnytska, S. Bychikhin, M. Cappriotti, O. Hilt, D. Visalli, G. Meneghesso, E. Zanoni, J. Würfl, J. Derluyn, G. Strasser, D. Pogany,  “Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1444-1449, 2013. ISSN 0026-2714, doi: 10.1016/j.microrel.2013.07.117
  203. R203 A. Chini, F. Soci, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, G. Meneghesso, E. Zanoni “Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1461-1465, 2013. ISSN 0026-2714, doi: 10.1016/j.microrel.2013.07.033
  204. R204 A. Compagnin, M. Meneghini, M. Barbato, V. Giliberto, A. Cester, M. Vanzi, G. Mura, E. Zanoni, G. Meneghesso, “Thermal and electrical investigation of the reverse bias degradation of silicon solar cells”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1809-1813, 2013. ISSN 0026-2714, doi: 10.1016/j.microrel.2013.07.013,
  205. R205 M. Dal Lago, M. Meneghini, N. Trivellin, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, “Hot-plugging of LED modules: Electrical characterization and device degradation”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1524-1528, 2013. ISSN 0026-2714, doi.; 10.1016/j.microrel.2013.07.054,
  206. R206 I. Rossetto, F. Rampazzo, R. Silvestri, A. Zanandrea, C. Dua, S. Delage, M. Oualli, M. Meneghini, E. Zanoni, G. Meneghesso “Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate”, Microelectronics Reliability, vol. 53, no. 9-11, pp. 1534-1537, 2013. ISSN 0026-2714
  207. R207 Rossetto, I. and Meneghini, M. and Meneghesso, G. and Zanoni, E., “Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics”. Microelectronics Reliability, In Press, 2013 doi: 10.1016/j.microrel.2013.07.115, ISBN: 0026-2714
  208. R208 Bisi, D.; Meneghini, M.; de Santi, C.; Chini, A.; Dammann, M.; Bruckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E., “Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements”,  IEEE Transactions on Electron Devices,  Vol. 60 , no. 10, pp. 3166 – 3175, 2013, doi: 10.1109/TED.2013.2279021
  209. R209 Chini, A.; Soci, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E., “Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy”, IEEE Transactions on Electron Devices, Vol. 60 , no. 10, pp.: 3176 – 3182, 2013.  doi.: 10.1109/TED.2013.2278290
  210. R210 Marcon, D. ; Meneghesso, G. ; Wu, T.-L. ; Stoffels, S. ; Meneghini, M. ; Zanoni, E.; Decoutere, S., “Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs”,  IEEE Transactions on Electron Devices,  Vol. 60, no. 10, pp. 3132 – 3141, 2013.  doi: 10.1109/TED.2013.2273216
  211. R211 Zanoni, E.; Meneghini, M.; Chini, A.; Marcon, D.; Meneghesso, G., “AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction”, INVITED IEEE Transactions on Electron Devices,  Vol. 60, no. 10, pp. 3119 – 3131, 2013.  doi.: 10.1109/TED.2013.2271954
  212. R212 M. Meneghini, M. dal Lago, N. Trivellin, G. Meneghesso, E. Zanoni, “Reliability Oriented Design of LED-Based Light Sources”, LED Professional review  LpR 39, p.54-59, Sept-Oct 2013.
  213. Meneghesso, G.; Meneghini, M.; Medjdoub, F.; Tagro, Y.; Grimbert, B.; Ducatteau, D.; Rolland, N.; Silvestri, R.; Zanoni, E., “First reliability demonstration of sub-200 nm AlN/GaN-on-Silicon Double Heterostructure HEMTs for Ka band applications”, INVITED IEEE Transactions on Device and Materials Reliability, Vol. 13, Issue: 4, pp. 480-488, 2013,  doi: 10.1109/TDMR.2013.2276425
  214. R214     M. Meneghini, S. Carraro, G. Meneghesso, N. Trivellin, G. Mura, F. Rossi, G. Salviati, K. Holc, T. Weig, L. Schade, M. A. Karunakaran, J. Wagner, U. T. Schwarz, and E. Zanoni, “Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence”, Applied Physics Letters 103, 233506 1-3 (2013), doi: 10.1063/1.4834697 doi. 10.1063/1.4834697
  215. R215    G. Ghione, K.J. Chen, T. Egawa, G. Meneghesso,T. Palacios, R. Quay, “Guest Editorial Special Issue on GaN Electronic Devices” IEEE Transactions on Electron Devices,  Vol. 60, no. 10, pp. 2975-2981,, 2013.  doi.: 10.1109/TED.2013.2278653
  216. R216 Giaffreda, D.; Magnone, P.; Meneghini, M.; Barbato, M.; Meneghesso, G.; Zanoni, E.; Sangiorgi, E.; Fiegna, C., “Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments”, IEEE Journal of Photovoltaics, Vol. 4: no. 1, pp. 40-47, 2014, doi: 10.1109/JPHOTOV.2013.2280838,  (USdept-BO)
  217. R217 Meneghini, M. ; Dal Lago, M. ; Trivellin, N. ; Meneghesso, G. ; Zanoni, E., “Degradation Mechanisms of High Power LEDs for Lighting Applications: an overview”,  IEEE Transactions on Industry Applications,  Vol. 50, Issue: 1, pp. 78-85, 2013 doi: 10.1109/TIA.2013.2268049
  218. R218    Barbato, M. ; Giliberto, V. ; Cester, A. ; Meneghesso, G., “A combined mechanical and electrical characterization procedure for investigating the dynamic behavior of RF-MEMS switches”, IEEE Transactions on Device and Materials Reliability, Vol. 14, no. 1, pp. 13-20, 2014, doi.: 10.1109/TDMR.2013.2282636
  219. R219    Meneghini, M. ; Bisi, D. ; Marcon, D. ; Stoffels, S. ; Van Hove, M. ; Wu, T. ; Decoutere, S. ; Meneghesso, G. ; Zanoni, E., “Trapping and Reliability assessment in D-mode GaN-based MIS-HEMTs for Power Applications”, IEEE Transactions on Power Electronics, Vol. 29, no. 5, pp. 2199-2207, 2013 .  doi: 10.1109/TPEL.2013.2271977
  220. R220    Meneghini, M. ; Bisi, D. ; Marcon, D. ; Stoffels, S. ; Van Hove, M. ; Wu, T.-L. ; Decoutere, S. ; Meneghesso, G. ; Zanoni, E. , “Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons”, Applied Physics Letters, Vol. 104, No. 14, pp. 143505 – 143505-4 , 2014. doi: 10.1063/1.4869680
  221. R221    Meneghini, M.; La Grassa, M. ; Vaccari, S. ; Galler, B. ; Zeisel, R. ; Drechsel, P. ; Hahn, B. ; Meneghesso, G. ; Zanoni, E. , “Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes ”, Applied Physics Letters, Vol. 104, No. 14, pp. 113505 – 113505-4 , 2014. doi: 10.1063/1.4868719
  222. R222    C. Abbate, M. Alderighi, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, V. De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M. Riva, A. Sanseverino, R. Silvestri, G. Spiazzi, F. Velardi, E. Zanoni, “Developments on DC/DC converters for the LHC experiment upgrades”, Journal of Instrumentation, Vol. 9,  pp. C02017, 2014. doi:10.1088/1748-0221/9/02/C02017
  223. R223    Verzellesi, G. ; Morassi, L. ; Meneghesso, G. ; Meneghini, M. ; Zanoni, E. ; Pozzovivo, G. ; Lavanga, S. ; Detzel, T. ; Haberlen, O. ; Curatola, G. ,. “Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs”, IEEE Electron Device Letters, Vol. 35, No. 4, pp. 443-445, 2014. doi:10.1109/LED.2014.2304680
  224. R224    J. Kuzmik, M. Jurkovi, D. Gregušová, M. Tapajna, F. Brunner, M. Cho, G. Meneghesso, and J. Würfl, “Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown” Journal of Applied Physics 115, 164504 (2014); doi: 10.1063/1.4873301
  225. R225    M. Meneghini, S. Vaccari, M. Dal Lago, S. Marconi, M. Barbato, N. Trivellin, A. Griffoni, A. Alfier, G. Verzellesi, G. Meneghesso, E. Zanoni., ESD degradation and robustness of RGB LEDs and modules: an investigation based on combined electrical and optical measurements, Microelectronics Reliability, Vol. 54, No. 6-7, pp. 1143-1149, 2014. doi: 10.1016/j.microrel.2014.02.009
  226. R226    Meneghini, M. ; Cibin, G. ; Bertin, M. ; Hurkx, G.A.M. ; Ivo, P. ; Sonsky, J. ; Croon, J.A. ; Meneghesso, G. ; Zanoni, E. “OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown” IEEE Transactions on Electron Devices, Volume: 61 , Issue: 6, Page(s): 1987 – 1992, 2014, DOI: 10.1109/TED.2014.2318671
  227. R227    G. Meneghesso, M. Meneghini, and E. Zanoni, “Breakdown mechanisms in AlGaN/GaN HEMTs: An overview”, INVITED Japanese Journal of Applied Physics 53, 100211 (2014), http://dx.doi.org/10.7567/JJAP.53.100211, Online ISSN: 1347-4065, Print ISSN: 0021-4922
  228. R228 M. Calciati, M. Goano, F. Bertazzi, M. Vallone, X. Zhou, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni, E. Bellotti, G. Verzellesi, D. Zhu, and C. Humphreys, “Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: pitfalls and open issues”, AIP Advances Vol. 4, pp. 067118 (2014); doi: 10.1063/1.4882176 E-ISSN: 2158-3226
  229. R229    M. Dal Lago, M. Meneghini, C. De Santi, M. Barbato, N. Trivellin, G. Meneghesso, E. Zanoni “ESD on GaN-based LEDs: an analysis based on dynamic electroluminescence measurements and current waveforms”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 2138-2141, 2014. ISSN 0026-2714, doi: 10.1016/j.microrel.2014.07.122.
  230. R230    N. Wrachien, A. Cester, N. Lago, G. Meneghesso, R. D’Alpaos, A. Stefani, G. Turatti, M. Muccini, “Stress-Induced Degradation of p- and n-type Organic Thin-Film-Transistors in the ON and OFF States”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 1638-1642, 2014. ISSN 0026-2714, doi: http://dx.doi.org/10.1016/j.microrel.2014.07.065
  231. R231 A. Stocco, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso,  J. Grünenpütt, B. Lambert, H. Blanck, E. Zanoni, “Failure signatures on 0.25 µm GaN HEMTs for high-power RF applications”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 2237-2241 2014. ISSN 0026-2714, doi: 10.1016/j.microrel.2014.07.075 (ESA-GSTP.)
  232. R232    A. Stocco, S. Gerardin, D. Bisi, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck, E. Zanoni, “Proton induced trapping effect on space compatible GaN HEMTs”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 2213-2216, 2014. ISSN 0026-2714, doi: 10.1016/j.microrel.2014.07.120 (ESA-GSTP.)
  233. R233    C. De Santi, M. Meneghini, M. Marioli, M. Buffolo, N. Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U.T. Schwarz, G. Meneghesso, E. Zanoni, “Thermally-activated degradation of InGaN-based laser diodes: effect on threshold current and forward voltage”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 2147-2150, 2014. ISSN 0026-2714, doi: 10.1016/j.microrel.2014.07.073
  234. R234    I. Rossetto, F. Rampazzo, M. Meneghin, M. Silvestri, C. Dua, P. Gamarra, R. Aubry, M.-A. di Forte-Poisson, O. Patard, S.L. Delage, G. Meneghesso, E. Zanoni, “Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 2248-2252, 2014. ISSN 0026-2714, doi: 10.1016/j.microrel.2014.07.092
  235. R235    A. Chini, F. Soci, G. Meneghesso, M. Meneghini, E. Zanon “Traps localization and analysis in GaN HEMTs”, Microelectronics Reliability, vol. 54, no. 9-11, pp. 2222-2226, 2014. ISSN 0026-2714, doi: 10.1016/j.microrel.2014.07.085
  236. R236    Bisi, D. ; Meneghini, M. ; Marino, F.A. ; Marcon, D. ; Stoffels, S. ; Van Hove, M. ; Decoutere, S. ; Meneghesso, G. ; Zanoni, “”Kinetics of Buffer-Related Ron-Increase in GaN-on-Silicon MIS-HEMTs”, IEEE Electron Device Letters, vol. 35, 10, pp. 1004 – 1006, 2014. ISSN 0741-3106, doi: 10.1109/LED.2014.2344439
  237. R237    C. de Santi, M. Meneghini, H. Ishida, T. Ueda, G. Meneghesso, E. Zanoni, “Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors”, Applied Physics Letters, 105, 073507 (2014), DOI:http://dx.doi.org/10.1063/1.4893607, ISSN: 0003-6951, E-ISSN: 1077-3118,
  238. R238    Chini, Alessandro; Meneghesso, Gaudenzio; Pantellini, Alessio; Lanzieri, Claudio; Zanoni, Enrico. 2014. INVITED “Reliability Investigation of GaN HEMTs for MMICs Applications.” Micromachines Vol. 5, no. 3: pp. 570-582. doi:10.3390/mi5030570, ISSN ISSN 2072-666X,
  239. R239    F.A. Marino, A. Stocco, M. Barbato, E. Zanoni, G. Meneghesso, “Double Control Gate Field Effect Transistor for Area Efficient and Cost Effective Applications”, IEEE Electron Device Letters, vol. 35, no. 11, pp. 1073-1075, 2014. doi: 10.1109/LED.2014.2354112 (NO ACKN.)
  240. R240    M. Barbato, M. Meneghini, A. Cester,  G. Mura, E. Zanoni, and G. Meneghesso, “Influence of Shunt Resistance on the Performance of an Illuminated String of Solar Cells: Theory, Simulation, and Experimental Analysis”, IEEE Transactions on Device and Materials Reliability, vol. 14, no.4, pp. 942 – 950, 2014. doi: 10.1109/TDMR.2014.2347138,
  241. R241    C. De Santi, M. Meneghini, N. Trivellin, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, and E. Zanoni , Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation, Applied Physics Letters vol. 105, 213506 (2014); doi: 10.1063/1.4902870, ISSN: 0003-6951(NO ACKN.)
  242. R242    Meneghini, M. ; Rossetto, I. ; Bisi, D. ; Stocco, A. ; Chini, A. ; Pantellini, A. ; Lanzieri, C. ; Nanni, A. ; Meneghesso, G. ; Zanoni, E.  Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements, IEEE Transactions on Electron Devices,Volume: 61 , Issue: 12, pp. 4070 – 4077, 2014. doi: 10.1109/TED.2014.2364855 (MANGA, ONR.)
  243. R243    M. Meneghini, P. Vanmeerbeek, R. Silvestri, S. Dalcanale, A. Banerjee, D. Bisi, E. Zanoni, G. Meneghesso, P. Moens, “Temperature-Dependent Dynamic Ron in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage,” IEEE Transactions on Electron Devices, vol.62, no.3, pp.782-787, March 2015 doi: 10.1109/TED.2014.2386391,  ISSN: 0018-9383, Scopus:2-s2.0-84922703443
  244. R244    M. Meneghini, I. Rossetto, F. Hurkx, J. Sonsky, J. A. Croon, G. Meneghesso, and E. Zanoni, “Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress”, IEEE Transactions on Electron Devices, vol 62, no. 8, pp. 2549-2554, August 2015, doi: 10.1109/TED.2015.2446032, ISSN: 0189383, Scopus: 2-s2.0-84937887468
  245. R245    I. Rossetto, M. Meneghini, M. Barbato, F. Rampazzo, D. Marcon, G. Meneghesso, and E. Zanoni, “Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs”, IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 2830-2836, September 2015, doi: 10.1109/TED.2015.2463713, ISSN: 00189383, Scopus: 2-s2.0-84940062601 (ONR.)
  246. R246    F. Medjdoub, M. Zegaoui, A. Linge, B. Grimbert, R. Silvestri, M. Meneghini, G. Meneghesso, and E. Zanoni, “High PAE high reliability AlN/GaN double heterostructure”, Solid-State Electronics 113 (2015) 49–53, doi: 10.1016/j.sse.2015.05.009, ISSN: 0381101, Scopus: 2-s2.0-84937513480
  247. R247    I. Rossetto, F. Rampazzo, S. Gerardin, M. Meneghini, M. Bagatin, A. Zanandrea, C. Dua, M.-A. di Forte-Poisson, R. Aubry, M. Oualli, S.L. Delage, A. Paccagnella, G. Meneghesso, E. Zanoni, “Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs”, Solid-State Electronics 113 (2015) 15–21, doi: 10.1016/j.sse.2015.05.013, ISSN: 00381101, Scopus: 2-s2.0-84937253654
  248. R248    F.A. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. Van Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, G. Meneghesso, “Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation”, Solid-State Electronics 113 (2015) 9–14, doi: 10.1016/j.sse.2015.05.012, ISSN: 00381101, Scopus: 2-s2.0-84937253293
  249. R249 N. Wrachien, A. Cester, N. Lago, A. Rizzo, R. D’Alpaos, A. Stefani, G. Turatti, M. Muccini, G. Meneghesso, Reliability study of organic complementary logic inverters using constant voltage stress, Solid-State Electronics, Volume 113, November 2015, Pages 151-156, ISSN 0038-1101, http://dx.doi.org/10.1016/j.sse.2015.05.028. Scopus: 2-s2.0-84937252684
  250. R250    M. La Grassa, M. Meneghini, C. De Santi, M. Mandurrino, M. Goano, F. Bertazzi, R. Zeisel, B. Galler, G. Meneghesso, and E. Zanoni, “Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects”, Microelectronics Reliability vol. 55, no. 9-10, pp. 1775–1778, 2015, doi: 10.1016/j.microrel.2015.06.103, ISSN: 00262714, Scopus: 2-s2.0-84943452947
  251. R251    C. De Santi, M. Dal Lago, M. Buffolo, D. Monti, M. Meneghini, G. Meneghesso, and E. Zanoni, “Failure causes and mechanisms of retrofit LED lamps”, Microelectronics Reliability, vol. 55, no. 9-10, pp. 1765–1769, 2015. doi: 10.1016/j.microrel.2015.06.080, ISSN: 00262714, Scopus: 2-s2.0-84943451676 (NOACK.)
  252. R252    M. Buffolo, C. De Santi, M. Meneghini, D. Rigon, G. Meneghesso, and E. Zanoni, “Long-term degradation mechanisms of mid-power LEDs for lighting applications”, Microelectronics Reliability vol. 55 no. 9-10, pp. 1754–1758, 2015. doi: 10.1016/j.microrel.2015.06.098, ISSN: 00262714, Scopus,2-s2.0-84943457010
  253. R253    I. Rossetto, M. Meneghini, D. Bisi, A. Barbato, M. Van Hove, D. Marcon, T.-L. Wu, S. Decoutere, G. Meneghesso, E. Zanoni, “Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs”, Microelectronics Reliability vol. 55, no. 9-10, pp. 1692–1696, 2015 doi: 10.1016/j.microrel.2015.06.130, ISSN: 00262714, Scopus: 2-s2.0-84943449934
  254. R254    D. Bisi, A. Stocco, I. Rossetto, M. Meneghini, F. Rampazzo, A. Chini, F. Soci, A. Pantellini, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di Forte-Poisson, D. De Salvador, M. Bazzan, G. Meneghesso, and E. Zanoni, “Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs”, Microelectronics Reliability vol. 55, no. 9-19, pp. 1662–1666, 2015. doi: 10.1016/j.microrel.2015.06.038, ISSN: 00262714, Scopus: 2-s2.0-84943451368
  255. R255    N. Wrachien, N. Lago, A. Rizzo, R. D’Alpaos, A. Stefani, G. Turatti, M. Muccini, G. Meneghesso, A. Cester, “Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics”, Microelectronics Reliability, vol. 55, no. 9-10, pp. 1790-1794, ISSN 0026-2714, doi: 10.1016/j.microrel.2015.06.073, Scopus: 2-s2.0-84943451804
  256. R256    D. Bisi, M. Meneghini, M. Van Hove, D. Marcon, S. Stoffels, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate”, Phys. Status Solidi A 212, No. 5, 1122–1129 (2015), doi: 10.1002/pssa.201431744, ISSN: 18626300, Scopus: 2-s2.0-84929077248
  257. R257 M. Marioli, M. Meneghini, F. Rossi, G. Salviati, C. de Santi, G. Mura, G. Meneghesso, and E. Zanoni, “Degradation mechanisms and lifetime of state-of-the-art green laser diodes”, Phys. Status Solidi A 212, No. 5, 974–979 (2015), doi: 10.1002/pssa.201431714, ISSN: 18626300, Scopus: 2-s2.0-84929161877
  258. R258    M. Mandurrino, G. Verzellesi, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, M. Meneghini, G. Meneghesso, and E. Zanoni, “Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes”, Phys. Status Solidi A 212, No. 5, 947–953 (2015), doi: 10.1002/pssa.201431743, ISSN: 18626300, Scopus: 2-s2.0-84929075215
  259. R259    M. Mandurrino, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, G. Verzellesi, M. Meneghini, G. Meneghesso, and E. Zanoni, “Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes”, Journal of Computational Electronics (2015) 14, 444–455, doi: 10.1007/s10825-015-0675-3, ISSN: 5698025, Scopus: 2-s2.0-84929707281
  260. R260    Barbato, M. ; Meneghesso, G.  “A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Micro Electro Mechanical Switches”, IEEE Electron Device Letters, vol. 36 no, 2, pp. 177-179, 2015.  ISSN : 0741-3106, DOI: 10.1109/LED.2014.2376594, Scopus: 2-s2.0-84921846030
  261. R261 M. Meneghini, D. Zhu, C. J. Humphreys, M. Berti, A. Gasparotto, T. Cesca, A. Vinattieri, F. Bogani, G. Meneghesso, and E. Zanoni, “Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes”, AIP ADVANCES 5, 107121 (2015), doi: 10.1063/1.4934491, E-ISSN: 2158-3226, Scopus: 2-s2.0-84945300610
  262. R262    M. Barbato, A. Cester, V. Mulloni, B. Margesin and G. Meneghesso, “Transient Evolution of Mechanical and Electrical Effects in Microelectromechanical Switches Subjected to Long Term Stresses”, IEEE Transactions on Electron Devices, vol 62, no. 11, pp. 3825 – 3831, August 2015, doi: 10.1109/TED.2015.2479578, ISSN: 0018-9383, Scopus: 2-s2.0-84946494141
  263. R263    D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design”, IEEE Electron Device Letters vol. 36 no. 10, pp. 1011-1014, 2015, doi: 10.1109/LED.2015.2474116, ISSN: 0741-3106, Scopus: 2-s2.0-84959538497
  264. R264    N. Lago, A. Cester, N. Wrachien, I. Tomasino, S. Toffanin, S. D. Quiroga, E. Benvenuti, M. Natali, M. Muccini, and G. Meneghesso, “On the Pulsed and Transient Characterization of Organic Field-Effect Transistors”, IEEE Electron Device Letters, vol. 36, no. 12, pp. 1359-1362, doi: 10.1109/LED.2015.2496336, Scopus: 2-s2.0-84959501033
  265. R265 G. Meneghesso, M. Meneghini, R. Silvestri, P. Vanmeerbeek, P. Moens and E. Zanoni, “High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors”, Japanese Journal of Applied Physics, Volume 55, Number 1S, pp 01AD04 (5 pages) http://doi.org/10.7567/JJAP.55.01AD04, Scopus: 2-s2.0-84953276705 (E2CoGaN), R266    F. Iucolano, A. Parisi, S. Reina, G. Meneghesso, A. Chini, “Study of threshold voltage instability in E-mode GaN MOS-HEMTs”, Physica Status Solidi (c), Volume 13, Issue 5-6, pages 321–324, May 2016,  DOI: 10.1002/pssc.201510191, Scopus: 2-s2.0-84958190860
  266. R266    G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, T.-L. Wu, M. Van Hove, D. Marcon, S. Stoffels, S. Decoutere, E. Zanoni, “Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate”, (INVITED), Microelectronics Reliability 58 (2016) pp 151-157, doi: 10.1016/j.microrel.2015.11.024, ISSN: 0026-2714 Scopus: 2-s2.0-84949678911
  267. R267 M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A. Knauer, J. Würfl, I. Rossetto, E. Zanoni, G. Meneghesso, S. Dalcanale, “Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure”, Microelectronics Reliability 58 (2016) pp 177-184, doi: 10.1016/j.microrel.2015.11.026, ISSN: 0026-2714, Scopus: 2-s2.0-84949255830
  268. R268    V. Mulloni, L. Lorenzelli, B. Margesin, M. Barbato, G. Meneghesso, “Temperature as an accelerating factor for lifetime estimation of RF-MEMS switches”, Microelectronic Engineering  (2016), pp. 63-67, doi: 10.1016/j.mee.2016.03.023, scopus: 2-s2.0-84961843570
  269. R269    C. De Santi, M. Meneghini, D. Gachet, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, “Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes,” in IEEE Transactions on Nanotechnology, vol. 15, no. 2, pp. 274-280, March 2016. doi: 10.1109/TNANO.2016.2520833, ISSN: 1536-125X, Scopus: 2-s2.0-84963944077 (NOACK.)
  270. R270    C. De Santi, M. Meneghini, M. La Grassa, B. Galler, R. Zeisel, M. Goano, S. Dominici, M. Mandurrino, F. Bertazzi, D. Robidas, G. Meneghesso, E. Zanoni, “Role of defects in the thermal droop of InGaN-based light emitting diodes”, Journal of Applied Physics, 119, 094501 (2016), DOI: http://dx.doi.org/10.1063/1.4942438, ISSN: 0021-8979, E-ISSN: 1089-7550, Scopus: 2-s2.0-84959487754
  271. R271    A. Benvegnù, D. Bisi, S. Laurent, M. Meneghini, G. Meneghesso, D. Barataud, E. Zanoni, R. Quere “Drain Current Transient and Low Frequency Dispersion Characterizations in AlGaN/GaN HEMTs”, International Journal of Microwave and Wireless Technologies, IJMWT, vol. 8, no. 4-5, pp: 663-672, 2016, doi: 10.1017/S1759078716000398, ISSN: 1759-0795, scopus: 2-s2.0-84964031581
  272. R272    G. Meneghesso, M. Meneghini, I. Rossetto, D. Bisi, S. Stoffels, M. Van Hove, S. Decoutere, and E. Zanoni, “Reliability and parasitic issues in GaN-based power HEMTs”, INVITED (2016) Semiconductor Science and Technology, 31 (9), art. no. 093004, scopus: 2-s2.0-84988451730, DOI: 10.1088/0268-1242/31/9/093004
  273. R273    A. Benvegnù, S. Laurent, M. Meneghini, D. Barataud, G. Meneghesso, E. Zanoni, R. Quere, “On-wafer Single Pulse Thermal Load-Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs”, IEEE Transactions on Microwave Theory and Techniques, Vol. 64, no.3, pp. 767-775, 2016. doi: 10.1109/TMTT.2016.2523991, Scopus: 2-s2.0-84976251264 (ESA-GSTP.)
  274. R274    Barbato, M., Cester, A., Mulloni, V., Margesin, B., Meneghesso, G., “Preconditioning Procedure for the Better Estimation of the Long Term Lifetime in Microelectromechanical Switches”, IEEE Transactions on Electron Devices, vol. 63, no. 3, pp: 1274-1280, 2016. doi: 10.1109/TED.2016.2521266,  Scopus: 2-s2.0-84969335415 (ENS, REdundancy.)
  275. R275    Meneghini, M., Rossetto, I., Bisi, D., Ruzzarin, M., Van Hove, M., Stoffels, S., Wu, T.-L., Marcon, D., Decoutere, S., Meneghesso, G., Zanoni, E., “Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs”, IEEE Electron Device Letters, vol. 37, no. 4, pp. 474 – 477, 2016.  doi: 10.1109/LED.2016.2530693, Scopus: 2-s2.0-84963894325
  276. R276    Bisi, D., Chan, S.H., Liu, X., Yeluri, R., Keller, S., Meneghini, M., Meneghesso, G., Zanoni, E., Mishra, U.K., “On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors”, Applied Physics Letters, vol. 108, no. 11, pp. 112104 1-3, 2016. doi: 10.1063/1.4944466, Scopus: 2-s2.0-84961677957
  277. R277    C. De Santi, M. Meneghini, M. Buffolo, G. Meneghesso and E. Zanoni, “Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes,” in IEEE Electron Device Letters, vol. 37, no. 5, pp. 611-614, May 2016. doi: 10.1109/LED.2016.2543805, ISSN: 0741-3106, scopus: 2-s2.0-84964627157
  278. R278    F. Crupi, P. Magnone, S. Strangio, F. Iucolano, G. Meneghesso, “Low Frequency Noise and Gate Bias Instability in Normally-Off AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 65, no. 5, pp: 2219-2222, 2016, doi: 10.1109/TED.2016.2544798, scopus: 2-s2.0-84962490875 (
  279. R279    Lago, N., Cester, A., Wrachien, N., Natali, M., Quiroga, S.D., Bonetti, S., Barbato, M., Rizzo, A., Benvenuti, E., Benfenati, V., Muccini, M., Toffanin, S., Meneghesso, G. “A Physical-Based Equivalent Circuit Model for an Organic/Electrolyte Interface”, (2016) Organic Electronics: physics, materials, applications, 35, pp. 176-185. scopus: 2-s2.0-84977659725, DOI: 10.1016/j.orgel.2016.05.018
  280. R280    Meneghini, M., Rossetto, I., Rizzato, V., Stoffels, S., Van Hove, M., Posthuma, N., Wu, T.-L., Marcon, D., Decoutere, S., Meneghesso, G., Zanoni, E., “Gate stability of GaN-Based HEMTs with P-Type Gate” Electronics, Vol. 5, no. 2, pp. 14:1 – 14.8, doi: 10.3390/electronics5020014, Scopus: 2-s2.0-84962028321
  281. R281    M. Barbato, A. Barbato, M. Meneghini, A. Cester, G. Mura, D. Tonini, A. Voltan. G. Cellere, and G. Meneghesso, “Reverse bias degradation of metal wrap through silicon solar cells”, Solar Energy Materials and Solar Cells – SOLMAT – vol. 147, pp. 288-294, (2016), doi: 10.1016/j.solmat.2015.12.029, ISSN: 0927-0248, scopus: 2-s2.0-84953726160
  282. R282    Mulloni, V; Barbato, M; Meneghesso, G. “Long-term lifetime prediction for RF-MEMS switches”,  Journal of Micromechanics and Microengineering (JMM), Vol. 26, no. 7, pp. 074004  scopus: 2-s2.0-84979556493, DOI: 10.1088/0960-1317/26/7/074004
  283. R283    M. La Grassa, M. Meneghini, C. De Santi, E. Zanoni, G. Meneghesso, “Degradation of InGaN-based LEDs related to charge diffusion and build-up”, (2016) Microelectronics Reliability, 64, pp. 614-616. scopus: 2-s2.0-84991709366, DOI: 10.1016/j.microrel.2016.07.131
  284. R284    I. Rossetto, M. Meneghini, V. Rizzato, M. Ruzzarin, A. Favaron, S. Stoffels, M. Van Hove, N. Posthuma, T-L Wu, D. Marcon, S. Decoutere, G. Meneghesso and E. Zanoni, “Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis”, (2016) Microelectronics Reliability, 64, pp. 547-551.  scopus: 2-s2.0-84991640186, DOI: 10.1016/j.microrel.2016.07.127
  285. R285 M. Buffolo, M. Meneghini, C. De Santi, H. Felber, G. Meneghesso and E. Zanoni, “Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs” (2016) Microelectronics Reliability, 64, pp. 610-613. scopus: 2-s2.0-84991669890, DOI: 10.1016/j.microrel.2016.07.103
  286. R286 C. De Santi, M. Meneghini, G. Meneghesso and E. Zanoni, “Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes”, Microelectronics Reliability, Volume 64, September 2016, Pages 623–626. doi: 10.1016/j.microrel.2016.07.118 – Manca SCOPUS
  287. R287 Chini, A., Meneghesso, G., Meneghini, M., Fantini, F., Verzellesi, G., Patti, A., Iucolano, F. “Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers”, (2016) IEEE Transactions on Electron Devices, 63 (9), art. no. 7536644, pp. 3473-3478. scopus: 2-s2.0-84981738006, DOI: 10.1109/TED.2016.2593791
  288. R288 Barbato, M., Cester, A., Meneghesso, G. “Viscoelasticity Recovery Mechanism in Radio Frequency Microelectromechanical Switches”, (2016) IEEE Transactions on Electron Devices, 63 (9), art. no. 7516604, pp. 3620-3626. scopus: =2-s2.0-84978865165, DOI: 10.1109/TED.2016.2586600
  289. R289 Monti, D., Meneghini, M., De Santi, C., Meneghesso, G., Zanoni, E., “Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions”, (2016) IEEE Transactions on Device and Materials Reliability, 16 (2), art. no. 7460214, pp. 213-219. scopus: 2-s2.0-84976286993, DOI: 10.1109/TDMR.2016.2558473
  290. R290    Ruzzarin, M., Meneghini, M., Rossetto, I., Van Hove, M., Stoffels, S., Wu, T.-L., Decoutere, S., Meneghesso, G., Zanoni, E., “Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress, (2016) IEEE Electron Device Letters, PP (99), art. no. 7565474, scopus: =2-s2.0-84991795214, DOI: 10.1109/LED.2016.2609098
  291. R291 Lago, N., Cester, A., Wrachien, N., Benvenuti, E., Quiroga, S.D., Natali, M., Toffanin, S., Muccini, M., Meneghesso, G., “Investigation of Mobility Transient on Organic Transistor by Means of DLTS Technique”, (2016) IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4432 – 4439, 2016.  scopus: 2-s2.0-84990842147, DOI: 10.1109/TED.2016.2611142
  292. R292 I. Rossetto, M. Meneghini, O. Hilt, E. Bahat-Treidel, C. De Santi, S. Dalcanale, J. Wuerfl, E. Zanoni, G. Meneghesso, “Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate”, IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2334-2339, June. 2016. doi: 10.1109/TED.2016.2553721
  293. R293 A. Salavei, D. Menossi, F. Piccinelli, A. Kumar, G. Mariotto, M. Barbato, M. Meneghini, G. Meneghesso, S. Di Mare, E. Artegiani, A. Romeo, “Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition”, Solar Energy, 139 (2016) pp. 13–18, doi:  http://dx.doi.org/10.1016/j.solener.2016.09.004
  294. R294 Iucolano, F.; Parisi, A.; Reina, S.; Meneghesso, G.; Chini, A., “Study of threshold voltage instability in E-mode GaN MOS-HEMTs”, Phys. Status Solidi C vol.13, No. 5–6, 321–324 (2016), doi: 10.1002/pssc.201510191
  295. R295    M. Buffolo, M. Meneghini, A. Munaretto, C. De Santi, G. Meneghesso and E. Zanoni.”Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties”, IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 191-196, March 2017.  Print ISSN: 1530-4388 Online ISSN: 1558-2574, doi:  10.1109/TDMR.2016.2642167
  296. R296    M. Meneghini, A. Barbato, I. Rossetto, A. Favaron, M. Silvestri, S. Lavanga, H. Sun, H. Brech, G. Meneghesso, E. Zanoni, “Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin”, IEEE TRANSACTIONS On ELECTRON DEVICES, vol. 64, no. 3, pp. 1032-1037, March 2017.. doe: 10.1109/TED.2017.2654859
  297. R297 I. Rossetto; M. Meneghini; S. Pandey; M. Gajda; G. A. M. Hurkx; J. A. Croon; J. Šonský; G. Meneghesso; E. Zanoni, “Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation”, IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 73-77, Jan. 2017. doi: 10.1109/TED.2016.2623774
  298. R298 D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl “Defect-Related Degradation of AlGaN-Based UV-B LEDs,” in IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 200-205, Jan. 2017. doi: 10.1109/TED.2016.2631720
  299. R299 C. De Santi, M. Meneghini, D. Monti, J. Glaab, M. Guttmann, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, and E. Zanoni, “Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs,” Photon. Res.  5, A44-A51 (2017). DOI: 10.1364/PRJ.5.000A44 ISSN: 2327-9125

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